Abstract: To provide an electroless copper plating solution that is favorable to improve the adhesion of a plating film, and an electroless copper plating solution which realizes uniform plating at a low temperature. This electroless copper plating solution is characterized by containing a water-soluble nitrogen-containing polymer in an electroless copper plating solution, and preferably the above-mentioned electroless copper plating solution contains glyoxylic acid and phosphinic acid as reducing agents. The water-soluble nitrogen-containing polymer is preferably a polyacrylamide or a polyethyleneimine, and preferably its weight average molecular weight (Mw) is at least 100,000, and Mw/Mn is 10.0 or less.

Abstract: It is an object of the present invention to provide a semiconductor wafer on which a thin, smooth, uniform and good adhesive electroless plating layer that can be suitable for a seed layer is formed, and to provide an electroless plating method which is suitable for use in the manufacture of such a semiconductor wafer. A semiconductor wafer is coated with a silane coupling agent which has a functional group that is able to capture a metal, and is further coated with an organic-solvent solution of a palladium compound such as palladium chloride or the like. Afterward, the wafer is electroless plated. As a result of such an electroless plating method, a semiconductor wafer having a thickness of 70 to 5000 angstroms and a mean surface roughness Ra of 10 to 100 angstroms can be obtained.

Abstract: An electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of the phosphorous copper anode 10 to 1500 ?m when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of the phosphorous copper anode 5 to 1500 ?m when the anode current density during electrolysis is less than 3 A/dm2. The electrolytic copper plating method and phosphorous copper anode used in such electrolytic copper plating method is capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and is capable of preventing the adhesion of particles to a semiconductor wafer. A semiconductor wafer plated with the foregoing method and anode having low particle adhesion are provided.

Abstract: It is an object to provide a method for metal plating with good adhesion to materials that are difficult to plate. The present invention is a metal plating method wherein a material to be plated is surface treated with a silane coupling agent having in a molecule thereof a functional group with a metal-capturing capability, is heat treated at a high temperature of at least 150° C., a surface treatment is performed with a solution containing a noble metal compound, and electroless plating is performed. Alternatively, the present invention is a metal plating method wherein a material to be plated is surface treated with a liquid in which a noble metal compound and a silane coupling agent having in a molecule thereof a functional group with a metal-capturing capability have already been mixed or reacted, is heat treated at a high temperature of at least 150° C., and electroless plating is performed.

Abstract: It is an object of the present invention to provide a novel imidazole alcohol compound that adheres strongly to metal surfaces in metal products, especially copper, aluminum and steel products, and that has a superior rust-preventive effect even in a thin film, and a surface-treating agent using the same. The novel imidazole alcohol compound is expressed by the following general formula (1) show a rust-preventive effect. (In general formula (1), R1, R2 and R3 are each hydrogen, a vinyl group or an alkyl group with 1 to 20 carbon atoms, an aromatic ring may be formed by R2 and R3, X indicates hydrogen, an alkyl group with 1 to 6 carbon atoms, or a substituent group which may contain N or O, m indicates an integer from 0 to 20, and n and 1 indicate integers from 1 to 3.) The above-mentioned imidazole alcohol compound can be produced by reacting an imidazole compound and an epoxy alcohol compound.

Abstract: Resin cloths, powders, specular bodies and other objects resistant to conventional plating can be plated with metals by a simple method. According to the metal plating method of the present invention, electroless plating is performed after the surface of a object to be plated is treated with a pretreatment agent obtained by reacting or mixing in advance a noble metal compound (catalyst) with a silane-coupling agent having functional groups capable of capturing metals. According to this method, metal plating can be securely applied to powders, resin cloths, semiconductor wafers, and other specular bodies. Moreover, the problem of the insufficient coverage of the seed layer on the inside walls of vias and trenches during the formation of fine wiring can be addressed by applying this method to semiconductor wafers. The silane-coupling agent may be a compound containing azole groups, preferably an imidazole.

Abstract: It is an object of the present invention to provide a semiconductor wafer on which a thin, smooth, uniform and good adhesive electroless plating layer that can be suitable for a seed layer is formed, and to provide an electroless plating method which is suitable for use in the manufacture of such a semiconductor wafer.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing pure copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating with the pure copper anode having a crystal grain diameter of 10 &mgr;m or less or 60 &mgr;m or more or a non-recrystallized anode.

Abstract: Resin cloths, powders, specular bodies and other objects resistant to conventional plating can be plated with metals by a simple method.

Abstract: The present invention pertains to an electrolytic copper plating method characterized in employing phosphorous copper as the anode upon performing electrolytic copper plating, and performing electrolytic copper plating upon making the crystal grain size of said phosphorous copper anode 10 to 1500 &mgr;m when the anode current density during electrolysis is 3 A/dm2 or more, and making the grain size of said phosphorous copper anode 5 to 1500 &mgr;m when the anode current density during electrolysis is less than 3 A/dm2. Provided are an electrolytic copper plating method and a phosphorous copper anode used in such electrolytic copper plating method capable of suppressing the generation of particles such as sludge produced on the anode side within the plating bath, and capable of preventing the adhesion of particles to a semiconductor wafer, as well as a semiconductor wafer plated with the foregoing method and anode having low particle adhesion.