Abstract: When a p-layer 4 composed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layer 5 is in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5×10?3 Pa or lower. The temperature of the thermal treatment is 500° C. for about 1 hour.

Abstract: There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlxGayInzN layer (wherein 0?x?1, 0?y?1, and 0?z?1) and an oxide material layer composed of a metal oxide and formed on the AlxGayInzN layer. The metal oxide may be TiO2. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.

Abstract: When a p-layer 4 composed of GaN is maintained at ordinary temperature and TNO is sputtered thereon by an RF magnetron sputtering method, a laminated TNO layer 5 is in an amorphous state. Then, there is included a step of thermally treating the amorphous TNO layer in a reduced-pressure atmosphere where hydrogen gas is substantially absent to thereby crystallize the TNO layer. At the sputtering, an inert gas is passed through together with oxygen gas, and volume % of the oxygen gas contained in the gas passed through is 0.10 to 0.15%. In this regard, oxygen partial pressure is 5×10?3 Pa or lower. The temperature of the thermal treatment is 500° C. for about 1 hour.

Abstract: There have been demands for transparent electrode materials and magnetic materials, each having a wide range of applications. In view of the situations, a novel functional device and a method for forming an oxide material are provided. A functional device includes an AlxGayInzN layer (wherein 0?x?1, 0?y?1, and 0?z?1) and an oxide material layer composed of a metal oxide and formed on the AlxGayInzN layer. The metal oxide may be TiO2. The present invention provides a functional device that includes a group III nitride layer having excellent physical and chemical properties and a film integrally formed thereon. The film reflects less light at the interface and has chemical resistance and high durability.