Patents by Inventor Junpei MORISHITA

Junpei MORISHITA has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250048934
    Abstract: A piezoelectric thin film contains a metal oxide having a perovskite structure. The metal oxide contains bismuth, potassium, titanium, magnesium, iron, and an element M. The element M is at least one element selected from the group consisting of gallium and cobalt. At least a part of the metal oxide is at least one crystal selected from the group consisting of a tetragonal crystal and an orthorhombic crystal. A (001) plane of the crystal is oriented in a normal direction of a surface of the piezoelectric thin film.
    Type: Application
    Filed: July 24, 2024
    Publication date: February 6, 2025
    Applicant: TDK Corporation
    Inventors: Junpei Morishita, Yusuke SATO
  • Patent number: 12052922
    Abstract: Provided is a piezoelectric thin film containing a tetragonal crystal 1 of a perovskite type oxide and a tetragonal crystal 2 of the oxide. A (001) plane of the tetragonal crystal 1 and a (001) plane of the tetragonal crystal 2 are oriented in a normal direction of a surface of the piezoelectric thin film. An interval of the (001) plane of the crystal 1 is c1. An interval of a (100) plane of the crystal 1 is a1. An interval of the (001) plane of the crystal 2 is c2. An interval of a (100) plane of the crystal 2 is a2. c2/a2 is more than c1/a1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 1 is I1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 2 is I2. I2/(I1+I2) is from 0.50 to 0.90.
    Type: Grant
    Filed: March 22, 2021
    Date of Patent: July 30, 2024
    Assignee: TDK Corporation
    Inventor: Junpei Morishita
  • Publication number: 20240237540
    Abstract: Provided is a piezoelectric thin film containing a tetragonal crystal 1 of a perovskite type oxide and a tetragonal crystal 2 of the oxide. A (001) plane of the tetragonal crystal 1 and a (001) plane of the tetragonal crystal 2 are oriented in a normal direction of a surface of the piezoelectric thin film. An interval of the (001) plane of the crystal 1 is c1. An interval of a (100) plane of the crystal 1 is al. An interval of the (001) plane of the crystal 2 is c2. An interval of a (100) plane of the crystal 2 is a2. c2/a2 is more than c1/a1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 1 is I1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 2 is I2. I2(I1+I2) is from 0.50 to 0.90.
    Type: Application
    Filed: February 26, 2024
    Publication date: July 11, 2024
    Applicant: TDK Corporation
    Inventor: Junpei MORISHITA
  • Publication number: 20230292621
    Abstract: A piezoelectric thin film element contains an electrode layer (first electrode layer) and a piezoelectric thin film directly or indirectly stacked on the electrode layer. The piezoelectric thin film contains a tetragonal crystal 1 of a perovskite-type oxide and a tetragonal crystal 2 of a perovskite-type oxide. A (001) plane of the tetragonal crystal 1 is oriented in a normal direction of a surface of the electrode layer. A (001) plane of the tetragonal crystal 2 is inclined with respect to the (001) plane of the tetragonal crystal 1. A spacing of (001) planes of the tetragonal crystal 1 is c1. A spacing of (100) planes of the tetragonal crystal 1 is a1. A spacing of (001) planes of the tetragonal crystal 2 is c2. A spacing of (100) planes of the tetragonal crystal 2 is a2. c1/a1 is larger than c2/a2.
    Type: Application
    Filed: August 25, 2022
    Publication date: September 14, 2023
    Applicant: TDK Corporation
    Inventor: Junpei MORISHITA
  • Publication number: 20230055097
    Abstract: A piezoelectric thin film contains a lower layer and a first piezoelectric layer stacked on the lower layer. The first piezoelectric layer contains a tetragonal crystal 1 of a perovskite-type oxide. A (001) plane of the tetragonal crystal 1 is oriented in a normal direction dn of a surface of the first piezoelectric layer. A spacing of (100) planes of the tetragonal crystal 1 is a1. A spacing of (100) planes of a crystal contained in the lower layer is aL. A lattice mismatch rate between the first piezoelectric layer and the lower layer is 100×(aL?a1)/a1. The lattice mismatch rate is 3.0 to 12.1%. A rocking curve of diffracted X-rays of the (001) plane of the tetragonal crystal 1 is measured in an out-of-plane direction of the surface of the first piezoelectric layer. A FWHM of the rocking curve is 1.9 to 5.5°.
    Type: Application
    Filed: July 28, 2022
    Publication date: February 23, 2023
    Applicant: TDK Corporation
    Inventor: Junpei MORISHITA
  • Patent number: 11532781
    Abstract: A piezoelectric thin film 3 contains a metal oxide, the metal oxide contains bismuth, potassium, titanium, iron and element M, the element M is at least one of magnesium and nickel, at least a part of the metal oxide is a crystal having a perovskite structure, and a (001) plane, a (110) plane or a (111) plane of the crystal is oriented in a normal direction dn of the surface of the piezoelectric thin film 3.
    Type: Grant
    Filed: January 3, 2020
    Date of Patent: December 20, 2022
    Assignee: TDK Corporation
    Inventor: Junpei Morishita
  • Publication number: 20220367785
    Abstract: A piezoelectric thin film includes a first piezoelectric layer and a second piezoelectric layer directly stacked on the first piezoelectric layer. The first piezoelectric layer contains a tetragonal crystal 1 of a perovskite-type oxide. The second piezoelectric layer contains a tetragonal crystal 2 of a perovskite-type oxide. A (001) plane of the tetragonal crystal 1 is oriented in a normal direction do of a surface of the piezoelectric thin film. A (001) plane of the tetragonal crystal 2 is oriented in the normal direction dn of the surface of the piezoelectric thin film. An interval of the (001) plane of the tetragonal crystal 1 is c1, an interval of a (100) plane of the tetragonal crystal 1 is a1, an interval of the (001) plane of the tetragonal crystal 2 is c2, an interval of a (100) plane of the tetragonal crystal 2 is a2, c2/a2 is more than c1/a1 and c1/a1 is from 1.015 to 1.050.
    Type: Application
    Filed: March 1, 2022
    Publication date: November 17, 2022
    Applicant: TDK Corporation
    Inventor: Junpei MORISHITA
  • Publication number: 20210305485
    Abstract: Provided is a piezoelectric thin film containing a tetragonal crystal 1 of a perovskite type oxide and a tetragonal crystal 2 of the oxide. A (001) plane of the tetragonal crystal 1 and a (001) plane of the tetragonal crystal 2 are oriented in a normal direction of a surface of the piezoelectric thin film. An interval of the (001) plane of the crystal 1 is c1. An interval of a (100) plane of the crystal 1 is a1. An interval of the (001) plane of the crystal 2 is c2. An interval of a (100) plane of the crystal 2 is a2. c2/a2 is more than c1/a1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 1 is I1. A peak intensity of diffracted X-rays of the (001) plane of the crystal 2 is I2. I2/(I1+I2) is from 0.50 to 0.90.
    Type: Application
    Filed: March 22, 2021
    Publication date: September 30, 2021
    Applicant: TDK Corporation
    Inventor: Junpei MORISHITA
  • Publication number: 20200227621
    Abstract: A piezoelectric thin film 3 contains a metal oxide, the metal oxide contains bismuth, potassium, titanium, iron and element M, the element M is at least one of magnesium and nickel, at least a part of the metal oxide is a crystal having a perovskite structure, and a (001) plane, a (110) plane or a (111) plane of the crystal is oriented in a normal direction dn of the surface of the piezoelectric thin film 3.
    Type: Application
    Filed: January 3, 2020
    Publication date: July 16, 2020
    Applicant: TDK Corporation
    Inventor: Junpei MORISHITA