Abstract: A light-emitting device capable of long-time display in a bent state is provided. A light-emitting device that can be repeatedly bent with a small radius of curvature is provided. The flexible light-emitting device includes a light-emitting element, a first inorganic insulating layer, a second inorganic insulating layer, and a first organic insulating layer. The first organic insulating layer is positioned over the first inorganic insulating layer. The light-emitting element is positioned over the first inorganic insulating layer with the first organic insulating layer therebetween. The second inorganic insulating layer is positioned over the light-emitting element. An end portion of the first inorganic insulating layer and an end portion of the second inorganic insulating layer are each positioned inward from an end portion of the first organic insulating layer. The end portion of the first organic insulating layer is exposed on a side surface of the light-emitting device.

Abstract: To provide a novel functional panel that is highly convenient, useful, or reliable. The functional panel includes a first region, a second region, and a third region. The third region is positioned between the first region and the second region, can be bent, and includes a functional layer, a bonding layer, and a first conductive film. The bonding layer includes a region positioned between the functional layer and the first conductive film. The functional layer includes a circuit and an insulating film. The circuit includes a second conductive film. The insulating film includes a region positioned between the first conductive film and the second conductive film. A capacitor is formed between the first conductive film and the second conductive film.

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond.

Abstract: A low-cost separation method with high mass productivity is provided. A first layer with a thickness of 0.1 ?m or more and 3 ?m or less can be formed by using a photosensitive and thermosetting material over the formation substrate, a resin layer comprising an opening is formed by forming an opening in the first layer by using a photolithography method, a silicon layer or an oxide layer is formed so as to overlap with the opening of the resin layer, a transistor including a metal oxide is formed over the resin layer, a conductive layer formed in the same manufacturing steps as the source or drain of the transistor is formed over the silicon layer or the oxide layer, the resin layer and one of the silicon layer and the oxide layer are irradiated with the laser light, and the transistor and the conductive layer are separated from the formation substrate.

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Abstract: The yield of a manufacturing process of a semiconductor device is increased. The productivity of a semiconductor device is increased. A first material layer is formed over a substrate, a second material layer is formed over the first material layer, and the first material layer and the second material layer are separated from each other, so that a semiconductor device is manufactured. In addition, a stack including the first material layer and the second material layer is preferably heated before the separation. The first material layer includes one or more of hydrogen, oxygen, and water. The first material layer includes a metal oxide, for example. The second material layer includes a resin (e.g., polyimide or acrylic). The first material layer and the second material layer are separated from each other by cutting a hydrogen bond.

Abstract: To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

Abstract: A low-cost separation method with high mass productivity is provided. A first layer with a thickness of 0.1 ?m or more and 3 ?m or less can be formed by using a photosensitive and thermosetting material over the formation substrate, a resin layer comprising an opening is formed by forming an opening in the first layer by using a photolithography method, a silicon layer or an oxide layer is formed so as to overlap with the opening of the resin layer, a transistor including a metal oxide is formed over the resin layer, a conductive layer formed in the same manufacturing steps as the source or drain of the transistor is formed over the silicon layer or the oxide layer, the resin layer and one of the silicon layer and the oxide layer are irradiated with the laser light, and the transistor and the conductive layer are separated from the formation substrate.

Abstract: A peeling apparatus including a support body supply unit, a support body hold unit, a transfer mechanism, and a first structure body. The first structure body has a convex surface. The support body supply unit has a function of unwinding a first support body and includes one of a pair of tension applying mechanisms. The support body hold unit includes the other of the pair of tension applying mechanisms. The pair of tension applying mechanisms applies tension to the first support body. The transfer mechanism has a function of transferring a process member. The first structure body has a function of bending back the first support body along the convex surface. The first structure body has a function of dividing the process member into a first member and a second member. An angle at which the first structure body bends back the first support body is an obtuse angle.

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.

Abstract: A peeling apparatus including a support body supply unit, a support body hold unit, a transfer mechanism, and a first structure body. The first structure body has a convex surface. The support body supply unit has a function of unwinding a first support body and includes one of a pair of tension applying mechanisms. The support body hold unit includes the other of the pair of tension applying mechanisms. The pair of tension applying mechanisms applies tension to the first support body. The transfer mechanism has a function of transferring a process member. The first structure body has a function of bending back the first support body along the convex surface. The first structure body has a function of dividing the process member into a first member and a second member. An angle at which the first structure body bends back the first support body is an obtuse angle.

Abstract: A highly reliable light-emitting device is provided. A light-emitting device with high resistance to repeated bending is provided. A light-emitting device in which cracks are less likely to occur even in a high-temperature and high-humidity environment is provided. The light-emitting device includes a light-emitting element between a pair of insulating layers. The pair of insulating layers is sandwiched between a pair of bonding layers. The pair of bonding layers is sandwiched between a pair of flexible substrates. At least one of the insulating layers has compressive stress. At least one of the bonding layers has a glass transition temperature higher than or equal to 60° C. At least one of the substrates has a coefficient of linear expansion less than or equal to 60 ppm/K.

Abstract: A flexible device is provided. The hardness of a bonding layer of the flexible device is set to be higher than Shore D of 70, or preferably higher than or equal to Shore D of 80. The coefficient of expansion of a flexible substrate of the flexible device is set to be less than 58 ppm/° C., or preferably less than or equal to 30 ppm/° C.