Patents by Inventor Junpeng REN

Junpeng REN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20250025852
    Abstract: The present invention relates to the field of energy chemical industry, and disclosed are a gliding arc plasma reactor, and a method for converting methane by means of plasma. The reactor comprises a reactor chamber and a gliding arc plasma generator arranged in the reactor chamber, wherein the gliding arc plasma generator comprises at least two arc surface electrodes which are symmetrically distributed, such that a discharge area can be formed between the arc surface electrodes. According to the gliding arc plasma reactor provided in the present invention, the conversion rate of methane can be significantly improved when methane is converted into olefin; the selectivity of ethylene in the product is improved; and carbon deposition is significantly reduced. In addition, compared with a traditional process for preparing olefin from methane, no CO2 is generated; the ignition and explosion risk is avoided; and the reactor is safer and more environmentally friendly.
    Type: Application
    Filed: December 19, 2022
    Publication date: January 23, 2025
    Inventors: Jing ZHANG, Wei XU, Zhe YANG, Mingchuan ZHOU, Junpeng REN, Tie ZHANG, Feng SUN, Jie JIANG, Bing SUN
  • Patent number: 11691119
    Abstract: Described are a low temperature plasma reaction device and a hydrogen sulfide decomposition method. The reaction device includes: a first cavity; a second cavity, the second cavity being embedded inside or outside the first cavity; an inner electrode, the inner electrode being arranged in the first cavity; an outer electrode; and a barrier dielectric arranged between the outer electrode and the inner electrode. The hydrogen sulfide decomposition method includes: implementing dielectric barrier discharge at the outer electrode and the inner electrode of the low temperature plasma reaction device, introducing a raw material gas containing hydrogen sulfide into the first cavity to implement a hydrogen sulfide decomposition method, and continuously introducing a thermally conductive medium into the second cavity in order to control the temperature of the first cavity of the low temperature plasma reaction device.
    Type: Grant
    Filed: January 31, 2019
    Date of Patent: July 4, 2023
    Assignees: CHINA PETROLEUM & CHEMICAL CORPORATION, CHINA PETROLEUM & CHEMICAL CORPORATION QINGDAO RESEARCH INSTITUTE OF SAFETY ENGINEERING
    Inventors: Jing Zhang, Shanjun Mu, Wei Xu, Ning Shi, Shucai Zhang, Guosheng Dong, Tie Zhang, Lin Wang, Junpeng Ren, Feng Sun
  • Publication number: 20200398245
    Abstract: Described are a low temperature plasma reaction device and a hydrogen sulfide decomposition method. The reaction device includes: a first cavity; a second cavity, the second cavity being embedded inside or outside the first cavity; an inner electrode, the inner electrode being arranged in the first cavity; an outer electrode; and a barrier dielectric arranged between the outer electrode and the inner electrode. The hydrogen sulfide decomposition method includes: implementing dielectric barrier discharge at the outer electrode and the inner electrode of the low temperature plasma reaction device, introducing a raw material gas containing hydrogen sulfide into the first cavity to implement a hydrogen sulfide decomposition method, and continuously introducing a thermally conductive medium into the second cavity in order to control the temperature of the first cavity of the low temperature plasma reaction device.
    Type: Application
    Filed: January 31, 2019
    Publication date: December 24, 2020
    Applicants: CHINA PETROLEUM & CHEMICAL CORPORATION, CHINA PETROLEUM & CHEMICAL CORPORATION QINGDAO RESEARCH INSTITUTE OF SAFEY ENGENEERING
    Inventors: Jing ZHANG, Shanjun MU, Wei XU, Ning SHI, Shucai ZHANG, Guosheng DONG, Tie ZHANG, Lin WANG, Junpeng REN, Feng SUN