Abstract: A cleaning robot is provided.

Abstract: A dual wireless fidelity (WiFi) apparatus for wireless Internet that may perform installation, maintenance, management, or the like of a WiFi access point (AP) by using a mobile communication relay system more efficiently, and a wireless Internet system using the dual WiFi apparatus for wireless Internet. The dual WiFi apparatus includes: a signal inputting unit comprising a plurality of input ports for inputting a plurality of mobile communication signals, respectively, and an input port for inputting an Ethernet signal; a signal converting unit for converting the inputted Ethernet signal into a plurality of WiFi signals; a signal coupling unit for coupling the plurality of inputted mobile communication signals to the plurality of WiFi signals converted by the signal converting unit, respectively; and a signal outputting unit for outputting a plurality of coupled signals coupled by the signal coupling unit through a plurality of output ports, respectively.

Abstract: The WiFi apparatus for wireless Internet includes: a signal inputting unit including a plurality of input ports for inputting a plurality of mobile communication signals, respectively, and an input port for inputting an Ethernet signal; a signal converting unit for converting the inputted Ethernet signal into a plurality of WiFi signals; a signal coupling unit for coupling the plurality of inputted mobile communication signals to the plurality of WiFi signals converted by the signal converting unit, respectively; a signal outputting unit for outputting a plurality of coupled signals coupled by the signal coupling unit through a plurality of output ports, respectively; and a coupler for allowing each of signals outputted from the signal outputting unit to be split with different phase differences and to be outputted.

Abstract: The WiFi apparatus for wireless Internet includes: a signal inputting unit including a plurality of input ports for inputting a plurality of mobile communication signals, respectively, and an input port for inputting an Ethernet signal; a signal converting unit for converting the inputted Ethernet signal into a plurality of WiFi signals; a signal coupling unit for coupling the plurality of inputted mobile communication signals to the plurality of WiFi signals converted by the signal converting unit, respectively; a signal outputting unit for outputting a plurality of coupled signals coupled by the signal coupling unit through a plurality of output ports, respectively; and a coupler for allowing each of signals outputted from the signal outputting unit to be split with different phase differences and to be outputted.

Abstract: A dual wireless fidelity (WiFi) apparatus for wireless Internet that may perform installation, maintenance, management, or the like of a WiFi access point (AP) by using a mobile communication relay system more efficiently, and a wireless Internet system using the dual WiFi apparatus for wireless Internet. The dual WiFi apparatus includes: a signal inputting unit comprising a plurality of input ports for inputting a plurality of mobile communication signals, respectively, and an input port for inputting an Ethernet signal; a signal converting unit for converting the inputted Ethernet signal into a plurality of WiFi signals; a signal coupling unit for coupling the plurality of inputted mobile communication signals to the plurality of WiFi signals converted by the signal converting unit, respectively; and a signal outputting unit for outputting a plurality of coupled signals coupled by the signal coupling unit through a plurality of output ports, respectively.

Abstract: A small-sized Integrated Radio Frequency Type Repeater includes first and second Service (transmitting) Antennas, a Junction circuit part with RF type (200) which plays the role of relay, a Shield Box (400) which protects the first and second Service Donor (receiving) Antennas (310, 320) and a Junction circuit part (200) installed inside of the same body. (Cover) (500). The first Service (transmitting) Antenna (110) and the first Donor (receiving) Antenna (310) attached to opposite sides of the Shield Box (400) and the second Service Antenna (120) is separated from the first Service (transmitting) Antenna (110) between the inside of Cover (500) and the first Service (transmitting) Antenna (110), and the second Donor (receiving) Antenna (320) is installed to be separated from the first Donor (receiving) Antenna (310) between the inside of the Cover (500) and the first Donor (receiving) Antenna (310).

Abstract: A semiconductor device incorporating a capacitor and a method of fabricating the same include a first inter-layer dielectric film formed on a semiconductor substrate, a first electrode pattern formed on the first inter-layer dielectric film, and a capacitor region self-aligned to the first electrode pattern and in which the first inter-layer dielectric film is etched. An MIM capacitor is conformably formed on the sidewall of the first electrode pattern in the capacitor region. In the capacitor region, a first hollow region is formed enclosed by the MIM capacitor and a second electrode pattern fills the first hollow region. The second electrode pattern has a sidewall opposite to the sidewall of the first electrode pattern. The MIM capacitor is conformably formed in the capacitor region that is deepened more than a thickness of an interconnection layer, so that it has a capacitor area wider than an area contacting with the interconnection layer.

Abstract: A test socket includes a socket body in which a semiconductor package is located, a socket head combined with the socket body, a Peltier element in the socket head, and power terminals connected to the Peltier element. A test equipment includes the test socket and a method of testing the semiconductor package uses the test socket.

Abstract: A test socket includes a socket body in which a semiconductor package is located, a socket head combined with the socket body, a Peltier element in the socket head, and power terminals connected to the Peltier element. A test equipment includes the test socket and a method of testing the semiconductor package uses the test socket.

Abstract: Electrical characteristics of a wafer are tested using a probe card while the wafer is placed on a wafer chuck. The wafer chuck cools the wafer to a predetermined temperature to test the electrical characteristics of the wafer at the normal temperature. Inside the wafer chuck, a plurality of thermoelectric elements are disposed in parallel with the top surface of the wafer chuck and current is applied to the thermoelectric elements. The thermoelectric elements heat or cool the wafer according to the direction of the applied current. The wafer chuck may heat the wafer to a predetermined temperature to test the electric characteristics of the wafer at a high temperature. The top surface of the wafer chuck may be heated by a heating coil installed on the wafer chuck.

Abstract: A small-sized Integrated Radio Frequency Type Repeater includes first and second Service (transmitting) Antennas, a Junction circuit part with RF type (200) which plays the role of relay, a Shield Box (400) which protects the first and second Service Donor (receiving) Antennas (310, 320) and a Junction circuit part (200) installed inside of the same body. (Cover) (500). The first Service (transmitting) Antenna (110) and the first Donor (receiving) Antenna (310) attached to opposite sides of the Shield Box (400) and the second Service Antenna (120) is separated from the first Service (transmitting) Antenna (110) between the inside of Cover (500) and the first Service (transmitting) Antenna (110), and the second Donor (receiving) Antenna (320) is installed to be separated from the first Donor (receiving) Antenna (310) between the inside of the Cover (500) and the first Donor (receiving) Antenna (310).

Abstract: A semiconductor device incorporating a capacitor and a method of fabricating the same include a first inter-layer dielectric film formed on a semiconductor substrate, a first electrode pattern formed on the first inter-layer dielectric film, and a capacitor region self-aligned to the first electrode pattern and in which the first inter-layer dielectric film is etched. An MIM capacitor is conformably formed on the sidewall of the first electrode pattern in the capacitor region. In the capacitor region, a first hollow region is formed enclosed by the MIM capacitor and a second electrode pattern fills the first hollow region. The second electrode pattern has a sidewall opposite to the sidewall of the first electrode pattern. The MIM capacitor is conformably formed in the capacitor region that is deepened more than a thickness of an interconnection layer, so that it has a capacitor area wider than an area contacting with the interconnection layer.

Abstract: A robot system includes a position information emitting unit including a light emitter to emit a light including phase information and a supersonic wave emitter to emit a supersonic wave, and a robot including a light receiver to receive the light, a supersonic wave receiver to receive the supersonic wave, and a position determining part to determine a relative position of the robot with respect to the position information emitting unit based on the phase information of the light received through the light receiver and the supersonic wave received through the supersonic wave receiver. Thus the robot system can precisely determine the position of the robot regardless of external environments, and reduce cost of a configuration of the system.

Abstract: Oxide isolation regions are fabricated for integrated circuit substrates by forming a pad layer on an integrated circuit substrate and forming a silicon nitride mask on the pad layer. The mask exposes a portion of the pad layer. The exposed portion of the pad layer is thinned to thereby define a pad layer sidewall. A silicon nitride layer is formed on the silicon nitride mask, on the thinned pad layer and on the pad layer sidewall. The silicon nitride layer is selectively etched to form a silicon nitride spacer on the pad layer sidewall. The integrated circuit substrate is then oxidized, using the silicon nitride mask and the silicon nitride spacer as an oxidation mask, to thereby form an oxide isolation region in the thinned portion of the pad layer and in the integrated circuit substrate beneath the pad layer.