Abstract: A structured product, comprising: at least two layers comprising a first layer and a second layer; wherein: the first layer comprises at least one material having a temperature-dependent (e.g., a positive temperature-dependent or a negative temperature-dependent) wavelength-integrated emissivity (?); the second layer comprises at least one reflective material that is reflective to light in an 8-14 ?m wavelength range; and the structured product has a positive temperature-dependent wavelength-integrated emissivity. The structured product is useful in a method for thermal image sensitizing, the method comprising imaging, in an infrared spectrum, the structured product.

Abstract: A material platform with controllable emissivity and fabrication methods are provided that permit the manipulation of thermal radiation detection and IR signal modulation and can be adapted to a variety of uses including infrared camouflage, thermal IR decoys, thermo-reflectance imaging and IR signal modulation. The platform is a multilayer WxV1-xO2 film with different W doping levels (x values) and layer thicknesses, forming a graded W-doped construct. In WVO2 films with a total thickness <100 nm, the graded doping of W spreads the originally sharp metal-insulator phase transition (MIT) to a broad temperature range, greatly expanding the temperature window for emissivity modulation.

Abstract: This disclosure provides systems, methods, and apparatus related to thermoelectric materials. In one aspect, a thermoelectric material is provided. The thermoelectric material is then irradiated with charged particles to generated native defects in the thermoelectric material. The charged particles have energies of 100 keV or greater. The irradiation of the thermoelectric material may improve its thermoelectric properties.

Abstract: This disclosure provides systems, methods, and apparatus related to vanadium dioxide microactuators. In one aspect, a method includes depositing a vanadium dioxide layer on a sacrificial layer disposed on a substrate. A metal layer is deposited on the vanadium dioxide layer. The metal layer is patterned. Portions of the vanadium dioxide layer that are not covered by the metal layer are removed. At least a portion of the sacrificial layer is removed to form a cantilever-type structure including the vanadium dioxide layer and the metal layer disposed on the vanadium dioxide layer.

Abstract: The highly mismatched alloy Zn1-yMnyOxTe1-x, 0?y<1 and 0<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Abstract: The highly mismatched alloy Zn1-yMnyOxTe1-x, 0?y<1 and 0<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Abstract: The highly mismatched alloy Zn1-yMnyOxTe1-x, 0?y<1 and 0<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Abstract: An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In1?xGaxN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.

Abstract: The highly mismatched alloy Zn1-yMnyOxTe1-x, 0?y<1 and 0<x<1 and other Group II-IV-Oxygen implanted alloys have been synthesized using the combination of oxygen ion implantation and pulsed laser melting. Incorporation of small quantities of isovalent oxygen leads to the formation of a narrow, oxygen-derived band of extended states located within the band gap of the Zn1-yMnyTe host. With multiple band gaps that fall within the solar energy spectrum, Zn1-yMnyOxTe1-x is a material perfectly satisfying the conditions for single-junction photovoltaics with the potential for power conversion efficiencies surpassing 50%.

Abstract: An alloy having a large band gap range is used in a multijunction solar cell to enhance utilization of the solar energy spectrum. In one embodiment, the alloy is In1-xGaxN having an energy bandgap range of approximately 0.7 eV to 3.4 eV, providing a good match to the solar energy spectrum. Multiple junctions having different bandgaps are stacked to form a solar cell. Each junction may have different bandgaps (realized by varying the alloy composition), and therefore be responsive to different parts of the spectrum. The junctions are stacked in such a manner that some bands of light pass through upper junctions to lower junctions that are responsive to such bands.