Abstract: An etching method that includes using the etching liquid composition containing (A) 0.1 to 15 mass % of hydrogen peroxide, (B) 0.01 to 1 mass % of a fluoride ion source, (C) 2-hydroxyethane sulfonic acid or a salt thereof in an amount of 0.1 to 20 mass % in terms of organic sulfonic acid, (D) 0.01 to 5 mass % of at least one compound selected from the group consisting of azole-based compounds and compounds having a structure that has a 6-membered heterocycle including at least one nitrogen atom and three double bonds, and (E) water, is provided.

Abstract: An etching method that includes using the etching liquid composition containing (A) 0.1 to 15 mass % of hydrogen peroxide, (B) 0.01 to 1 mass % of a fluoride ion source, (C) 2-hydroxyethane sulfonic acid or a salt thereof in an amount of 0.1 to 20 mass % in terms of organic sulfonic acid, (D) 0.01 to 5 mass % of at least one compound selected from the group consisting of azole-based compounds and compounds having a structure that has a 6-membered heterocycle including at least one nitrogen atom and three double bonds, and (E) water, is provided.

Abstract: An etching liquid composition that contains (A) 0.1 to 15 mass % of hydrogen peroxide, (B) 0.01 to 1 mass % of a fluoride ion source, (C) an organic sulfonic acid compound represented by general formula (I) described in the specification or a salt thereof in an amount of 0.1 to 20 mass % in terms of organic sulfonic acid, (D) 0.01 to 5 mass % of at least one type of compound selected from among azole-based compounds and compounds having a structure that has a 6-membered heterocycle including at least one nitrogen atom and three double bonds, and (E) water; and an etching method that includes using the etching liquid composition are provided.