Abstract: A thin film processing system alternately introducing two types of material gases into a reaction vessel unit so as to process the surface of a substrate, provided with a reaction vessel (first chamber) formed inside the reaction vessel unit and into which a first material gas is introduced, a reaction vessel (second chamber) formed inside the reaction vessel unit stacked over this and into which a second material gas is introduced, an opening formed in a wall between the two adjoining reaction vessels, a plurality of partition plates moving back and forth between the two reaction vessels in a coordinated manner, one of which designed to close the opening and at least one of which carrying a substrate, and a material gas feed mechanism and exhaust mechanism for supplying the first material gas and second material gas to the substrate parallel to the substrate surface in the two vessels.

Abstract: A substrate processing device in which a film is formed on a substrate while a magnetic field, by a magnet arranged in the periphery of a substrate holder, is imparted on to the surface of a substrate mounted on the substrate holder while the substrate holder is rotated, wherein a rotation mechanism for the magnet and a rotation mechanism for the substrate holder are independently provided and controlled and, furthermore, in that it is provided with a device for detection of the magnetic field orientation, a device for detection of the prescribed orientation of the substrate, and a mechanism which, using the output of said two detection devices, affords rotation in which the prescribed direction of the substrate and the direction of the magnetic field are aligned within a prescribed angle.

Abstract: A substrate processing device is provided in which an interior rotating body for a substrate holder, provided in the interior of a vacuum chamber, and an external rotating body, provided in the exterior of said vacuum chamber, are magnetically coupled, and which includes a can-seal type magnetic coupling-type rotation introduction mechanism which, by the rotational movement of the abovementioned exterior rotating body, controls the rotational movement of the abovementioned interior rotating body. A heat-accumulating member, maintained at a predetermined temperature, and a device for performing heat exchange between the heat-accumulating member and the substrate holder, are provided in said vacuum chamber interior.

Abstract: To suppress the deposition of thin films on exposed positions inside the process chamber and facilitate the selective deposition of good quality thin films with high productivity, disilane gas is introduced to a substrate 9 heated by a heater 4 inside a process chamber 1, and a silicon film is deposited only on the silicon surfaces of substrate 9 by thermal CVD. A heat-reflecting plate 6, which is provided inside process chamber 1 to reflect the heat radiated from substrate 9 back to the substrate, is made of silicon with a silicon oxide film 61 formed on its surface. Silicon atoms separate out and adhere to the surface of silicon oxide layer 61 through the decomposition of disilane, but a reforming operation in which oxygen gas is introduced is performed between the film deposition processing of each substrate 9, whereby the Si atoms which exist in an isolated state with no Si—Si bonds between them are converted to silicon oxide.

Abstract: A substrate processing device is provided in which an interior rotating body for a substrate holder, provided in the interior of a vacuum chamber, and an external rotating body, provided in the exterior of said vacuum chamber, are magnetically coupled, and which includes a can-seal type magnetic coupling-type rotation introduction mechanism which, by the rotational movement of the abovementioned exterior rotating body, controls the rotational movement of the abovementioned interior rotating body. A heat-accumulating member, maintained at a predetermined temperature, and a device for performing heat exchange between the heat-accumulating member and the substrate holder, are provided in said vacuum chamber interior.

Abstract: A substrate processing device in which a film is formed on a substrate while a magnetic field, by a magnet arranged in the periphery of a substrate holder, is imparted on to the surface of a substrate mounted on the substrate holder while the substrate holder is rotated, wherein a rotation mechanism for the magnet and a rotation mechanism for the substrate holder are independently provided and controlled and, furthermore, in that it is provided with a device for detection of the magnetic field orientation, a device for detection of the prescribed orientation of the substrate, and a mechanism which, using the output of said two detection devices, affords rotation in which the prescribed direction of the substrate and the direction of the magnetic field are aligned within a prescribed angle.

Abstract: A method for forming a textured polysilicon layer that includes forming a layer of doped polysilicon having a textured surface on the surface of a semiconductor substrate includes a second amorphous silicon film to which a low concentration of dopant has been added is deposited on a first amorphous silicon film to which a high concentration of dopant has been added; the first and second amorphous silicon films are then crystallized by annealing, during which step, silicon atoms are allowed to migrate at the surface of the second amorphous silicon film before the crystallization proceeds from the first amorphous silicon film and reaches the surface of the second amorphous silicon film, thereby forming a texture in the surface of the second amorphous film.

Abstract: A method for forming a textured polysilicon layer that includes forming a layer of doped polysilicon having a textured surface on the surface of a semiconductor substrate includes a second amorphous silicon film to which a low concentration of dopant has been added is deposited on a first amorphous silicon film to which a high concentration of dopant has been added; the first and second amorphous silicon films are then crystallized by annealing, during which step, silicon atoms are allowed to migrate at the surface of the second amorphous silicon film before the crystallization proceeds from the first amorphous silicon film and reaches the surface of the second amorphous silicon film, thereby forming a texture in the surface of the second amorphous film.

Abstract: To suppress the deposition of thin films on exposed positions inside the process chamber and facilitate the selective deposition of good quality thin films with high productivity, disilane gas is introduced to a substrate 9 heated by a heater 4 inside a process chamber 1, and a silicon film is deposited only on the silicon surfaces of substrate 9 by thermal CVD. A heat-reflecting plate 6, which is provided inside process chamber 1 to reflect the heat radiated from substrate 9 back to the substrate, is made of silicon with a silicon oxide film 61 formed on its surface. Silicon atoms separate out and adhere to the surface of silicon oxide layer 61 through the decomposition of disilane, but a reforming operation in which oxygen gas is introduced is performed between the film deposition processing of each substrate 9, whereby the Si atoms which exist in an isolated state with no Si—Si bonds between them are converted to silicon oxide.

Abstract: A plasma treatment device for forming a high-quality thin film with fewer surface flaws and etching by preventing the generation of fine powders from deposited films in a film-forming chamber, by means of plasma treatment using gaseous starting materials. The plasma treatment chamber device includes a plasma generation chamber 11, a power-supplying mechanism for supplying power to this chamber, a film-forming chamber 113 to be spatially connected to the plasma generation chamber 11, a magnetic field generation mechanism 14 provided around this film-forming chamber for forming a multicusp magnetic field therein, an evacuation mechanism for evacuating the chamber, a first gas-supplying mechanism 16 for supplying gaseous starting materials and a second gas-supplying mechanism 17 for supplying gaseous materials for forming films. An inner wall surface 113b of the film-forming chamber is located in an area having a multicusp magnetic field with an intensity of from 50 to 200 G.

Abstract: A thin film deposition method consists of placing a wafer or substrate whose surface contains at least two kinds of materials inside a vacuum chamber or vessel, supplying a reactant gas into the vacuum chamber or vessel, the reactant gas containing molecules having a low sticking coefficient relative to at least one of the at least two kinds of materials, and allowing an epitaxial growth to occur on the other kinds of materials contained in the wafer or substrate.The method further includes setting the pressure inside the vacuum chamber or vessel filled with the reactant gas equal to a pressure range in which the mean free path (d) of the reactant gas molecules is longer than the shortest distance (L) between the wafer or substrate placed inside the vacuum chamber or vessel and the vacuum side-exposed wall of the vacuum chamber or vessel, i.e., d>L.

Abstract: A vacuum film forming apparatus including a vacuum vessel having an interior divided into a first vacuum chamber and a second vacuum chamber. First evacuating means is arranged for the first vacuum chamber while it is communicated with the first vacuum chamber, and second evacuating means is arranged for the second vacuum chamber while it is communicated with the second vacuum chamber. In addition, a substrate heater is arranged in the first vacuum chamber, and gas supplying means is arranged in the second vacuum chamber. The apparatus further includes a substrate holder for holding a substrate thereon such that a film forming surface of the substrate is oriented toward the second vacuum chamber. The substrate holder is arranged at a position where the first vacuum chamber and the second vacuum chamber are gastightly isolated from each other with the substrate holder interposed therebetween together with the substrate.

Abstract: A thin film deposition method consists of depositing a thin film on a wafer by supplying a reactant gas molecules toward and onto the wafer within a vacuum vessel or chamber. The pressure within the vacuum vessel is set to the pressure under which the mean free path (d) of the molecules contained in the supplied reactant gas can be longer than the shortest distance (L) between the wafer and the wall of the vacuum vessel exposed to the vacuum side, or d>L. The temperature of the wafer is set to the temperature (T sub) at which the reactant gas can cause substantially the thermally decomposing reaction. The temperature of the vacuum side-exposed wall of the vacuum vessel (T wall) is set to a temperature range having the lower limit higher than the temperature (T vap) at which the saturated vapor pressure can be maintained to be equal to the partial pressure of the molecules contained in the reactant gas, and having the upper limit lower than the temperature of the wafer (T sub), or T vap<T wall<T sub.

Abstract: A vacuum deposition apparatus has a vacuum evaporation chamber provided therein with a dust collector electrode(s) and optionally with an electron beam source. When a DC voltage is applied to the dust collector electrode(s), large polarized dust particles and molecular clusters present in a space in the chamber are attracted to the dust collector electrode(s) by virtue of an electric force given thereto by application of the voltage thereto to enable a deposited film to be formed with a decrease in the number of surface defects thereof. The electron beam source, if present, serves to electrify or ionize only dust particles and molecular clusters having a large scattering cross section. A DC voltage reverse in polarity to that of the dust collector electrode(s) may be applied between a secondary molecular beam source and a substrate, a dopant substance being provided in the secondary molecular beam source to increase the amount of doping of growing crystals.

Abstract: For use in placing a semiconductor substrate in molecular beam epitaxy apparatus, a holder comprises a heat conductor member opposite to a substrate. The substrate is received in a space formed in a supporting member and is in engagement with a flange portion radially inwardly projected from a peripheral surface of the space. The heat conductor member is heated by a heater in the molecular beam epitaxy apparatus. This results in effective conduction of heat to the substrate. The substrate is easily put in the beam epitaxy apparatus and removed therefrom. The heat conductor member may be of pyrolytic graphite or sintered graphite.