Abstract: In some embodiments, one or more non-transitory, machine-readable medium has instructions thereon, the instructions when executed by a processor being configured to perform operations comprising obtaining scanning electron microscopy (SEM) metrology data for first areas on a training wafer, obtaining optical metrology data for second areas on the training wafer, and training a model, by using the SEM metrology data and the optical metrology data for the training wafer, to generate parameters for features on a production wafer based on optical metrology data for areas of the production wafer.

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

Abstract: A method of obtaining focus and dose data that requires no special marks and that uses images of in-die features is described. A focus/dose matrix wafer is created. Dimensions such as critical dimension (CD), CD uniformity (CDU), edge placement error (EPE), etc., at in-die locations are measured using a charged particle inspection system having a large field of view. Machine learning or regression methods are used to determine a relationship between focus and dose and the measured data. The same dimensions can then be measured on a production wafer and the relationship can be utilized to determine the focus and dose for the production wafer.

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

Abstract: A method for configuring a semiconductor manufacturing process, the method including: obtaining a first value of a first parameter based on measurements associated with a first operation of a process step in the semiconductor manufacturing process and a first sampling scheme; using a recurrent neural network to determine a predicted value of the first parameter based on the first value; and using the predicted value of the first parameter in configuring a subsequent operation of the process step in the semiconductor manufacturing process.

Abstract: A multiple-deflection blanker for charged particle beam lithography includes a support structure, a first pair of electrodes mounted to the support structure and providing a first electric field, a second pair of electrodes mounted to the support structure and providing a second electric field, at least a third pair of electrodes mounted to the support structure and providing a third electric field, and a surface, such as, an aperture or knife edge, positioned to obstruct a charged particle beam passed through the electric fields. The blanker may include at least a fourth pair of electrodes providing a fourth electric field and apparatus for regulating the time of the excitation of the electric fields. Methods for exposing media to charged particles and aperture holders are also provided.

Abstract: A multiple-deflection blanker for charged particle beam lithography includes a support structure, a first pair of electrodes mounted to the support structure and providing a first electric field, a second pair of electrodes mounted to the support structure and providing a second electric field, at least a third pair of electrodes mounted to the support structure and providing a third electric field, and a surface, such as, an aperture or knife edge, positioned to obstruct a charged particle beam passed through the electric fields. The blanker may include at least a fourth pair of electrodes providing a fourth electric field and apparatus for regulating the time of the excitation of the electric fields. Methods for exposing media to charged particles and aperture holders are also provided.

Abstract: Method and apparatus are provided for automated determination and adjustment of height and tilt of a substrate surface within a lithography system. The method includes: directing a beam of light onto the substrate surface, which reflects off the substrate surface as a reflected beam; optically splitting the reflected beam into a first reflected beam portion and a second reflected beam portion; impinging the first reflected beam portion onto a first detector plane of a first optical detector to generate intensity data, and impinging the second reflected beam portion onto a second detector plane of a second optical detector to generate intensity data, and utilizing the generated data in determining height and tilt of the substrate surface relative to a nominal writing plane of the lithography system. Responsive to the determination, focus or tilt of the system's writing beam, or position of the substrate surface within the system, is adjusted.

Abstract: Method and apparatus are provided for automated determination and adjustment of height and tilt of a substrate surface within a lithography system. The method includes: directing a beam of light onto the substrate surface, which reflects off the substrate surface as a reflected beam; optically splitting the reflected beam into a first reflected beam portion and a second reflected beam portion; impinging the first reflected beam portion onto a first detector plane of a first optical detector to generate intensity data, and impinging the second reflected beam portion onto a second detector plane of a second optical detector to generate intensity data, and utilizing the generated data in determining height and tilt of the substrate surface relative to a nominal writing plane of the lithography system. Responsive to the determination, focus or tilt of the system's writing beam, or position of the substrate surface within the system, is adjusted.