Abstract: A liquid crystal display device having a plurality of pixels arranged in a matrix includes first and second substrates and a liquid crystal layer held therebetween. Switching elements are arranged in each of the pixels on the first substrate. A first organic insulating film covers signal lines, scan lines and switching elements. Common electrodes are formed in the first organic insulating film on the first substrate. Connection elements are electrically connected to the switching elements through first contact holes formed in the first organic insulating film. A second organic insulating film covers the first organic insulating film and the connection elements. Pixel electrodes having slits are formed on the second organic insulating film electrically connected to the respective connection elements through second contact holes formed in the second organic insulating film.

Abstract: A liquid crystal display device having a plurality of pixels arranged in a matrix includes first and second substrates and a liquid crystal layer held therebetween. Switching elements are arranged in each of the pixels on the first substrate. A first organic insulating film covers signal lines, scan lines and switching elements. Common electrodes are formed in the first organic insulating film on the first substrate. Connection elements are electrically connected to the switching elements through first contact holes formed in the first organic insulating film. A second organic insulating film covers the first organic insulating film and the connection elements. Pixel electrodes having slits are formed on the second organic insulating film electrically connected to the respective connection elements through second contact holes formed in the second organic insulating film.

Abstract: An image detection device includes a pixel portion (OEF) having a photoelectric conversion film for converting incident light into a signal charge and a pixel capacitor for accumulating the signal charge, and a thin film transistor (TFT1) included in a signal detective circuit operation of which is controlled by a scanning line (G1) to read out the potential of a pixel electrode to a signal line (S1). The transistor (TFT1) having a source or drain connected to the pixel electrode is a TFT having an LDD structure on a high-potential side, a TFT having LDD structures on the high- and low-potential sides in which the LDD length is larger on the high-potential side, or a TFT having a double-gate structure.

Abstract: A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film and causing never melting to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently.

Abstract: A method for the production of a semiconductor device having an electrode line formed in a semiconducting substrate is disclosed which comprises preparing a semiconducting substrate having trenches and/or contact holes formed preparatorily in a region destined to form the electrode line, forming a conductive film formed mainly of at least one member selected from among Cu, Ag, and Au on the surface of the semiconducting substrate, heat-treating the superposed Cu film while supplying at least an oxidizing gas thereto thereby flowing the Cu film to fill the trenches and/or contact holes, and removing by polishing the part of the conductive film which falls outside the region of the electrode line and completing the electrode lines consequently. During the heat treatment, a reducing gas is supplied in addition to the oxidizing gas to induce a local oxidation-reduction reaction and fluidify and/or flow the conductive film and consequently accomplish the embodiment of the conductive film in the trenches.

Abstract: An electronic part is disclosed which is furnished with an artificial super lattice obtained by alternately superposing a substance of good conductivity formed of a compound between one element selected from among the elements belonging to the transition elements of Groups 3A to 6A and the rare earth elements and an element selected from among boron, carbon, nitrogen, phosphorus, selenium, and tellurium or a compound between oxygen and a transition metal element selected from among the elements of Group 7A and Group 8 and an insulating substance formed of a compound between a simple metal element selected from among the elements belonging to Group 1A, Group 2A, and Groups 1B to 4B and an element selected from among carbon, nitrogen, oxygen, phosphorus, sulfur, selenium, tellurium, and halogen elements in thicknesses fit for obtaining a quantum size effect.