Patents by Inventor Jun-Seok Ha

Jun-Seok Ha has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light emitting diode structure utilizing zinc oxide nanorod arrays on one or more surfaces, and a low cost method of producing such zinc oxide nanorod arrays
    Patent number: 8841691
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Grant
    Filed: August 19, 2013
    Date of Patent: September 23, 2014
    Assignee: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun-Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • LIGHT EMITTING DIODE STRUCTURE UTILIZING ZINC OXIDE NANOROD ARRAYS ON ONE OR MORE SURFACES, AND A LOW COST METHOD OF PRODUCING SUCH ZINC OXIDE NANOROD ARRAYS
    Publication number: 20130328012
    Abstract: A method of fabricating a Light Emitting Diode with improved light extraction efficiency, comprising depositing a plurality of Zinc Oxide (ZnO) nanorods on one or more surfaces of a III-Nitride based LED, by growing the ZnO nanorods from an aqueous solution, wherein the surfaces are different from c-plane surfaces of III-Nitride and transmit light generated by the LED.
    Type: Application
    Filed: August 19, 2013
    Publication date: December 12, 2013
    Applicant: The Regents of the University of California
    Inventors: Jacob J. Richardson, Daniel B. Thompson, Ingrid Koslow, Jun-Seok Ha, Frederick F. Lange, Steven P. DenBaars, Shuji Nakamura
  • Semiconductor light emitting device and fabrication method thereof
    Patent number: 7109048
    Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.
    Type: Grant
    Filed: September 28, 2004
    Date of Patent: September 19, 2006
    Assignee: LG Electronics Inc.
    Inventors: Jun-Seok Ha, Jun-Ho Jang, Jae-Wan Choi, Jung-Hoon Seo
  • Semiconductor light emitting device and fabrication method thereof
    Publication number: 20050067623
    Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode.
    Type: Application
    Filed: September 28, 2004
    Publication date: March 31, 2005
    Inventors: Jun-Seok Ha, Jun-Ho Jang, Jae-Wan Choi, Jung-Hoon Seo
  • Semiconductor light emitting device with transparent electrode having holes
    Patent number: RE45217
    Abstract: A semiconductor light emitting device and a fabrication method thereof includes: providing a substrate; forming an n-type semiconductor layer, a light emitting layer, a p-type semiconductor layer on the substrate; forming a first transparent electrode having holes per a certain region on the p-type semiconductor layer; and forming a first pad on the first transparent electrode. A method of fabricating a semiconductor light emitting device, and which includes forming a light emitting layer on the first type semiconductor layer; forming a second type semiconductor layer on the light emitting layer; forming a first transparent electrode on the second type semiconductor layer, the first transparent electrode having holes per a certain region to thereby expose the second type semiconductor layer; forming a second transparent electrode on the first transparent electrode; forming a first pad on the second transparent electrode; and forming a second pad over the first type semiconductor layer.
    Type: Grant
    Filed: September 16, 2008
    Date of Patent: October 28, 2014
    Assignee: LG Electronics Inc.
    Inventors: Jun-Seok Ha, Jun-Ho Jang, Jae-Wan Choi, Jung-Hoon Seo