Patents by Inventor Junshan GE

Junshan GE has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MEMS device and manufacturing method thereof
    Patent number: 11305985
    Abstract: A MEMS device and a manufacturing method thereof. The manufacturing method comprises: forming a CMOS circuit; and forming a MEMS module on the CMOS circuit which is coupling to the MEMS module and configured to drive the MEMS module. Forming the MEMS module comprises: forming a protective layer; forming a sacrificial layer in the protective layer; forming a first electrode on the protective layer and on the sacrificial layer so that the first electrode covers the sacrificial layer, and electrically coupling the first electrode to the CMOS circuit; forming a piezoelectric layer on the first electrode and above the sacrificial layer; forming a second electrode on the piezoelectric layer and electrically coupling the second electrode to the CMOS circuit; forming a through hole to reach the sacrificial layer; and forming a cavity by removing the sacrificial layer through the through hole.
    Type: Grant
    Filed: March 25, 2019
    Date of Patent: April 19, 2022
    Assignees: HANGZHOU SILAN INTEGRATED CIRCUIT CO., LTD., HANGZHOU SILAN MICROELECTRONICS CO., LTD.
    Inventors: Wei Sun, Yongxiang Wen, Chen Liu, Junshan Ge, Zhijian Ma
  • MEMS DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20200391996
    Abstract: A MEMS device and a manufacturing method thereof. The manufacturing method comprises: forming a CMOS circuit; and forming a MEMS module on the CMOS circuit which is coupling to the MEMS module and configured to drive the MEMS module. Forming the MEMS module comprises: forming a protective layer; forming a sacrificial layer in the protective layer; forming a first electrode on the protective layer and on the sacrificial layer so that the first electrode covers the sacrificial layer, and electrically coupling the first electrode to the CMOS circuit; forming a piezoelectric layer on the first electrode and above the sacrificial layer; forming a second electrode on the piezoelectric layer and electrically coupling the second electrode to the CMOS circuit; forming a through hole to reach the sacrificial layer; and forming a cavity by removing the sacrificial layer through the through hole.
    Type: Application
    Filed: March 25, 2019
    Publication date: December 17, 2020
    Inventors: Wei Sun, Yongxiang Wen, Chen Liu, Junshan GE, Zhijian Ma