Abstract: A composite of polymer member and inorganic substrate, a method of manufacturing the same, and a polymer member therefor are provided. A method for manufacturing a composite 210, 220 of polymer member and inorganic substrate includes: providing a composite 110, 120 of thermally modified polymer layer and inorganic substrate in which one or more thermally modified polymer layers 20, 21, 22 are adhered onto an inorganic substrate 10, and bonding a polymer member 30, 31, 32 to the inorganic substrate via the one or more thermally modified polymer layers 20, 21, 22.

Abstract: A polymer (B) essentially contains units represented by the following formulas (1), (2) and (3), wherein the number of moles of unit (1) is 0 to 95, the number of moles of unit (2) is 0 to 50, and the number of moles of unit (3) is 2 to 80 when the total number of moles of units (1), (2) and (3) is 100: In units (1) to (3), “X” is a recurring unit having a benzene ring, in unit (2), —CH3 is substituted on the benzene ring, “m” is an integer of 1-6, unit (3) is obtained by substituting a hydrogen of —CH3 in unit (2) by a substituent “Z” derived from a carboxylic acid or anhydride thereof, “n” is an integer of 1-6 indicative of the number of substitutions, l+n=m, and unit (3) is a unit in which “n” is an integer of 1-6 or a combination thereof.

Abstract: A composite of polymer member and inorganic substrate, a method of manufacturing the same, and a polymer member therefor are provided. A method for manufacturing a composite 210, 220 of polymer member and inorganic substrate includes: providing a composite 110, 120 of thermally modified polymer layer and inorganic substrate in which one or more thermally modified polymer layers 20, 21, 22 are adhered onto an inorganic substrate 10, and bonding a polymer member 30, 31, 32 to the inorganic substrate via the one or more thermally modified polymer layers 20, 21, 22.

Abstract: An optical element for terahertz waves includes: an optical component including a silicon surface, an antireflection film including an organic resin including a cycloolefin-based polymer as a main component, and inorganic particles dispersed in the organic resin; and an adhesive layer located between the optical component and the antireflection film in a thickness direction of the antireflection film and bonding the silicon surface of the optical component and the antireflection film to each other. The adhesive layer includes a thermally denatured olefin-based polymer.

Abstract: An optical element for terahertz waves includes: an optical component including a silicon surface, an antireflection film including an organic resin including a cycloolefin-based polymer as a main component, and inorganic particles dispersed in the organic resin; and an adhesive layer located between the optical component and the antireflection film in a thickness direction of the antireflection film and bonding the silicon surface of the optical component and the antireflection film to each other. The adhesive layer includes a thermally denatured olefin-based polymer.

Abstract: [PROBLEM TO BE SOLVED] To provide a composite of thermally-modified polymer layer and inorganic substrate, a composite of polymer member and inorganic substrate, and production methods thereof. [MEANS TO SOLVE THE PROBLEM] The method of the present invention for producing a composite of thermally-modified polymer layer and inorganic substrate 110 or 120 includes forming a first polymer layer on an inorganic substrate 10, and heating and thermally modifying the first polymer layer in order to bond the first thermally-modified polymer layer 20 onto the inorganic substrate.

Abstract: The present invention provides a semiconductor film, a field effect transistor, and a method of fabricating the semiconductor film that has one or two or more semiconductor portions, which are formed from a semiconductor material, and one or two or more polymer portions, which are formed from a polymer material. The semiconductor portion and the polymer portion are adjacent to each other and are integrated.

Abstract: A raw material solution (6), in which an organic semiconductor material is dissolved in a solvent, is supplied to a substrate (1). The solvent is evaporated so that crystals of the organic semiconductor material are precipitated. Thus, an organic semiconductor thin film (7) is formed on the substrate (1). An edge forming member (2) having a contact face (2a) on one side is used and located opposite the substrate (1) so that the plane of the contact face (2a) intersects the surface of the substrate (1) at a predetermined angle. The raw material solution (6) is supplied to the substrate (1) and formed into a droplet (6a) that comes into contact with the contact face (2a).

Abstract: The present invention provides a semiconductor film, a field effect transistor, and a method of fabricating the semiconductor film that has one or two or more semiconductor portions, which are formed from a semiconductor material, and one or two or more polymer portions, which are formed from a polymer material. The semiconductor portion and the polymer portion are adjacent to each other and are integrated.

Abstract: A raw material solution (6), in which an organic semiconductor material is dissolved in a solvent, is supplied to a substrate (1). The solvent is evaporated so that crystals of the organic semiconductor material are precipitated. Thus, an organic semiconductor thin film (7) is formed on the substrate (1). An edge forming member (2) having a contact face (2a) on one side is used and located opposite the substrate (1) so that the plane of the contact face (2a) intersects the surface of the substrate (1) at a predetermined angle. The raw material solution (6) is supplied to the substrate (1) and formed into a droplet (6a) that comes into contact with the contact face (2a).