Abstract: A method for controlling a fault of a three phase four wire interlinking converter system according to one embodiment of the present disclosure comprises obtaining a first d-q-o coordinate plane based on an internal phase angle of output voltage produced from each phase of an inverter; converting the first d-q-o coordinate plane to a second d-q-o coordinate plane based on the o-axis configured differently from the first d-q-o coordinate plane; obtaining an output voltage vector for determining a fault location by performing d-q transform on the second d-q-o coordinate plane; determining occurrence of a fault and an area related to the fault based on the output voltage vector; and in the occurrence of the fault, allocating a zero voltage vector to the area related to the fault.

Abstract: A method for controlling a fault of a three phase four wire interlinking converter system according to one embodiment of the present disclosure comprises obtaining a first d-q-o coordinate plane based on an internal phase angle of output voltage produced from each phase of an inverter; converting the first d-q-o coordinate plane to a second d-q-o coordinate plane based on the o-axis configured differently from the first d-q-o coordinate plane; obtaining an output voltage vector for determining a fault location by performing d-q transform on the second d-q-o coordinate plane; determining occurrence of a fault and an area related to the fault based on the output voltage vector; and in the occurrence of the fault, allocating a zero voltage vector to the area related to the fault.

Abstract: A method for controlling a fault of a three phase four wire interlinking converter system according to one embodiment of the present disclosure comprises obtaining a first d-q-o coordinate plane based on an internal phase angle of output voltage produced from each phase of an inverter; converting the first d-q-o coordinate plane to a second d-q-o coordinate plane based on the o-axis configured differently from the first d-q-o coordinate plane; obtaining an output voltage vector for determining a fault location by performing d-q transform on the second d-q-o coordinate plane; determining occurrence of a fault and an area related to the fault based on the output voltage vector; and in the occurrence of the fault, allocating a zero voltage vector to the area related to the fault.

Abstract: A method for controlling a fault of a three phase four wire interlinking converter system according to one embodiment of the present disclosure comprises obtaining a first d-q-o coordinate plane based on an internal phase angle of output voltage produced from each phase of an inverter; converting the first d-q-o coordinate plane to a second d-q-o coordinate plane based on the o-axis configured differently from the first d-q-o coordinate plane; obtaining an output voltage vector for determining a fault location by performing d-q transform on the second d-q-o coordinate plane; determining occurrence of a fault and an area related to the fault based on the output voltage vector; and in the occurrence of the fault, allocating a zero voltage vector to the area related to the fault.

Abstract: Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.

Abstract: A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed.

Abstract: Disclosed herein is a wire type thin film solar cell, including: a metal wire which is made of any one selected from the group consisting of aluminum (Al), titanium (Ti), chromium (Cr), molybdenum (Mo) and tungsten (W); an N-type layer which is deposited on a circumference of the metal wire and conducts electrons generated from the metal wire; a P-type layer which is deposited on the N-type layer and emits electrons excited by solar light; and a transparent electrode layer which is deposited on the P-type layer. The wire type thin film solar cell can exhibit high photoelectric conversion efficiency compared to conventional flat-plate type thin film solar cells and can be easily manufactured into a highly-dense solar cell module.

Abstract: Provided are nanocrystal silicon layer structures formed using a plasma deposition technique, methods of forming the same, nonvolatile memory devices including the nanocrystal silicon layer structures, and methods of fabricating the nonvolatile memory devices. A method of forming a nanocrystal silicon layer structure includes forming a buffer layer on a substrate and forming a nanocrystal silicon layer on the buffer layer by a plasma deposition technique using silicon (Si)-containing gas and hydrogen (H2)-containing gas. In this method, the nanocrystal silicon layer can be directly deposited on a glass substrate using plasma vapor deposition without performing a post-processing process so that the fabrication of a nonvolatile memory device can be simplified, thereby reducing fabrication cost.

Abstract: A thin film transistor (TFT), a method of forming the same and a flat panel display device having the same are disclosed.

Abstract: A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.

Abstract: A non-volatile memory device includes a buffer oxide film on a substrate; a polysilicon layer on the buffer oxide film; a silicon oxy-nitride (SiON) layer on the polysilicon layer, a first insulator layer on the SiON layer, a nitride film on the first insulator, a second insulator layer on the nitride film, an electrode on the second insulator, and a source/drain in the polysilicon layer.

Abstract: A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.

Abstract: A non-volatile memory device is capable of reducing an excessive leakage current due to a rough surface of a polysilicon and of realizing improved blocking function by forming the first oxide film including a silicon oxy-nitride (SiOxNy) layer using nitrous oxide (N2O) plasma, and by forming silicon-rich silicon nitride film, and a fabricating method thereof and a memory apparatus including the non-volatile memory device. Further, the non-volatile memory device can be fabricated on the glass substrate without using a high temperature process.

Abstract: A nonvolatile memory cell is capable of reducing an excessive current leakage due to a rough surface of a polysilicon and of performing even at a low temperature process by forming the first oxide film including a silicon oxynitride (SiOxNy) layer using nitrous oxide plasma and by forming a plurality of silicon nanocrystals in a nitride film by implanting a silicon nanocrystal on the nitride film by an ion implantation method, and a fabricating method thereof and a memory apparatus including the nonvolatile memory cell.