Abstract: A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Abstract: A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Abstract: A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Abstract: A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Abstract: A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Abstract: A semiconductor device is provided including a resistor structure, the semiconductor device including a substrate having an upper surface perpendicular to a first direction; a resistor structure including a first insulating layer on the substrate, a resistor layer on the first insulating layer, and a second insulating layer on the resistor layer; and a resistor contact penetrating the second insulating layer and the resistor layer. The tilt angle of a side wall of the resistor contact with respect to the first direction varies according to a height from the substrate. The semiconductor device has a low contact resistance and a narrow variation of contact resistance.

Abstract: An insect capturing device having an imaging function for harmful insect information management, according to the present invention, comprises: a collection unit having a collection net so as to collect harmful insects, and having a passage tube, provided on one side of the collection net, through which the collected harmful insects pass; a support unit provided on the other side of the collection unit so as to support the collection unit; a capturing analyzer having an outer filter connected to the collection unit through the passage tube so as to separate moisture from air introduced with the harmful insects, an inner filter connected to the outer filter and maintaining constant temperature and humidity conditions, a capturing tube unit connected to the inner filter and having a count sensor for sensing the harmful insects having passed there through and counting the number of harmful insects, and a gathering unit connected to the capturing tube unit and having a gathering net for enabling the harmful insec

Abstract: A semiconductor device can include a substrate including a plurality of active regions having a long axis in a first direction and a short axis in a second direction, the plurality of active regions being repeatedly and separately positioned along the first and second directions, an isolation film defining the plurality of active regions, a plurality of word lines extending across the plurality of active regions and the isolation film, and a positive fixed charge containing layer covering at least a portion of the plurality of word lines, respectively.

Abstract: Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a trench in the active region; a gate electrode filling at least a portion of the trench; a recess in the substrate at one side of the gate electrode, the recess overlapping a portion of the device isolation layer and the active region; and a lower contact plug filling the recess.

Abstract: Disclosed is a centrifugal separation device for removing air bubbles from materials filled into syringes, the device including: a centrifugal separator having a round body, a sealing cover sealably mounted on top of the body, a rotary shaft and a rotary body rotated by the operation of a motor, mounting members coupled to hinge shafts formed on the four faces of the rotary body, the syringes mounted on the mounting members through respective stands, a vacuum pipe and a vacuum releasing pipe connected on the underside of the body, and a vacuum sensor mounted at the inside of the vacuum pipe; a vacuum driving part adapted to absorb the air from the interior of the body through the vacuum pipe to reduce the internal pressure of the body to a given pressure; a sensing part adapted to input the pressure value detected from the vacuum sensor to a controller; a motor driving part adapted to drive the motor to rotate the rotary shaft; and the controller adapted to operate the centrifugal separator, to constantly mai

Abstract: A semiconductor device can include a substrate including a plurality of active regions having a long axis in a first direction and a short axis in a second direction, the plurality of active regions being repeatedly and separately positioned along the first and second directions, an isolation film defining the plurality of active regions, a plurality of word lines extending across the plurality of active regions and the isolation film, and a positive fixed charge containing layer covering at least a portion of the plurality of word lines, respectively.

Abstract: Provided is a semiconductor device, including a substrate including a device isolation layer and an active region isolated by the device isolation layer; a trench in the active region; a gate electrode filling at least a portion of the trench; a recess in the substrate at one side of the gate electrode, the recess overlapping a portion of the device isolation layer and the active region; and a lower contact plug filling the recess.

Abstract: In a method of manufacturing a semiconductor device, a trench is formed by removing an upper portion of a substrate. A gate insulation layer pattern is formed on an inner wall of the trench. A gate electrode is formed on the gate insulation layer pattern. The gate electrode fills a lower portion of the trench. A capping layer is formed on the gate electrode and the gate insulation layer pattern. The capping layer is partially oxidized to form a first capping layer pattern and a second capping layer pattern. The first capping layer pattern is not oxidized, and the second capping layer pattern is oxidized. A third capping layer pattern is formed on the second capping layer pattern, the third capping layer pattern filling an upper portion of the trench.

Abstract: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

Abstract: A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided. The semiconductor probe includes a protrusion portion protruded to a predetermined height on a cantilever in a first direction crossing a length direction of the cantilever, an embossed resistive tip formed on the protrusion portion, and first and second semiconductor electrode regions formed at opposite sides of the embossed resistive tip at the protrusion portion, wherein the cantilever is doped with a first dopant, the first and second semiconductor electrode regions and the embossed resistive tip are doped with a second dopant having a different polarity from the first dopant, and the embossed resistive tip is doped with a concentration lower than the first and second semiconductor electrode regions.

Abstract: A semiconductor probe and a method of fabricating the same are provided. The semiconductor probe includes a cantilever doped with first impurities, a resistive tip which protrudes from an end of the cantilever and doped lightly with second impurities, doping control layers formed on both sides of a protruding portion of the resistive tip, and first and second electrode regions formed under the doping control layers and doped heavily with the second impurities.

Abstract: A semiconductor probe having an embossed resistive tip and a method of fabricating the semiconductor probe are provided.

Abstract: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.

Abstract: A microwave oven includes a main body, a door opening and closing the main body, and a control panel placed in one side of the main body and provided with a plurality of function operators. A guide line is provided on the control panel and lights up to guide manipulation order of the function operator.

Abstract: A semiconductor probe with a high-resolution tip and a method of fabricating the same are provided. The semiconductor probe includes: a cantilever doped with a first impurity; a resistive convex portion projecting from an end portion of the cantilever and lightly doped with a second impurity opposite in polarity to the first impurity; and first and second electrode regions formed on either side of the resistive convex portion and heavily doped with the second impurity.