Patents by Inventor Jun-sung Choi

Jun-sung Choi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabricating GaN
    Patent number: 7462893
    Abstract: A method of fabricating a thick gallium nitride (GaN) layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCI and NH3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.
    Type: Grant
    Filed: October 11, 2006
    Date of Patent: December 9, 2008
    Assignee: Samsung Corning Co., Ltd.
    Inventors: Jai-yong Han, Jun-sung Choi, In-jae Song
  • Method of fabricating GaN
    Publication number: 20070092980
    Abstract: A method of fabricating a thick GaN layer includes forming a porous GaN layer having a thickness of 10-1000 nm by etching a GaN substrate in a reaction chamber in an HCl and NH3 gas atmosphere and forming an in-situ GaN growth layer in the reaction chamber. The method of forming the porous GaN layer and the thick GaN layer in-situ proceeds in a single chamber. The method is very simplified compared to the prior art. In this way, the entire process is performed in one chamber, and in particular, GaN etching and growth are performed using an HVPE process gas such that costs are greatly reduced.
    Type: Application
    Filed: October 11, 2006
    Publication date: April 26, 2007
    Applicant: Samsung Corning Co., Ltd.
    Inventors: Jai-yong Han, Jun-sung Choi, In-jae Song