Abstract: Methods for removing an oxide film and for cleaning silicon-on-insulator structures are disclosed. The methods may involve immersing the silicon-on-insulator structure in a stripping bath to strip an oxide film from the surface of the silicon-on-insulator structure. The stripped silicon-on-insulator structure is immersed in an ozone bath comprising ozone. The ozone-treated silicon-on-insulator structure may be immersed in an SC-1 bath comprising ammonium hydroxide and hydrogen peroxide to clean the structure.

Abstract: Methods for removing an oxide film and for cleaning silicon-on-insulator structures are disclosed. The methods may involve immersing the silicon-on-insulator structure in a stripping bath to strip an oxide film from the surface of the silicon-on-insulator structure. The stripped silicon-on-insulator structure is immersed in an ozone bath comprising ozone. The ozone-treated silicon-on-insulator structure may be immersed in an SC-1 bath comprising ammonium hydroxide and hydrogen peroxide to clean the structure.

Abstract: A low-concentration gas differential combustion device includes a low-concentration gas super-cooling dehydration and demisting device, a gas pretreatment device, a burner, a long-term burning open fire device, a high-energy self-heat dispersion rapid ignition device, a combustion chamber, and a waste-heat utilization device. With the low-concentration gas differential combustion device, the problems of gas escaping, forced direct emission, low heat extraction efficiency, concentration over-limit explosions, increase in equipment volume and increase in investment caused by the reversal process in the existing ventilation air oxidation technology, and the problems of narrow gas adaptation concentration range, small adaptive concentration and pressure change amplitude, poor combustion temperature adjustability, high NOx content, high shutdown rate, and low gas utilization rate in the low-concentration gas internal combustion engine power generation technology are solved.