Patents by Inventor Junwen Huang

Junwen Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240136131
    Abstract: The present disclosure relates to a liquid-cooling radiating pipe and a vacuum interrupter with a built-in liquid-cooling radiating pipe, belonging to the field of vacuum circuit breakers. Based on an original structure of an vacuum interrupter, a liquid-cooling radiating pipe of a Tesla valve structure is arranged in a conductive rod of the vacuum interrupter with the built-in liquid-cooling radiating pipe, and liquid metal is used as a circulating coolant in the liquid-cooling radiating pipe, and by using the self-circulating flow of the liquid metal in the pipeline, the capacity of the conductive rod to dissipate heat to the outside is significantly increased, and the problem of excessive internal temperature rise of a vacuum circuit breaker is effectively solved.
    Type: Application
    Filed: May 8, 2023
    Publication date: April 25, 2024
    Inventors: Xiaolong HUANG, Tao SUN, Yiwei JI, Shangyu YANG, Zhiyun WU, Shuangwei ZHAO, Shenli JIA, Lihua ZHAO, Wenjun NING, Zhong WANG, Junwen REN
  • Patent number: 9349606
    Abstract: A method for forming conductive contacts in a dielectric layer is provided. Partial vias are etched into the dielectric layer through a via mask. Trenches are etched into the dielectric layer through a trench mask, wherein the etching the trenches completes and over etches the vias to widen bottoms of the vias. Tops of the trenches or vias are rounded.
    Type: Grant
    Filed: May 2, 2012
    Date of Patent: May 24, 2016
    Assignee: Lam Research Corporation
    Inventors: Yu Cheng, Junwen Huang, Huiyuan Pei, Jiangang Liu, Youngjin Choi, Liang Wang
  • Publication number: 20150179472
    Abstract: A method for forming conductive contacts in a dielectric layer is provided. Partial vias are etched into the dielectric layer through a via mask. Trenches are etched into the dielectric layer through a trench mask, wherein the etching the trenches completes and over etches the vias to widen bottoms of the vias. Tops of the trenches or vias are rounded.
    Type: Application
    Filed: May 2, 2012
    Publication date: June 25, 2015
    Inventors: Yu Cheng, Junwen Huang, Huiyuan Pei, Jiangang Liu, Youngjin Choi, Liang Wang