Abstract: A semiconductor memory device includes a substrate including a cell area and a peripheral area, a plurality of capacitors including a plurality of lower electrodes arranged in the cell area, a plurality of capacitor dielectric layers covering the plurality of lower electrodes, and an upper electrode on the plurality of capacitor dielectric layers, an etch stop layer covering the upper electrode, a filling insulation layer covering the etch stop layer and arranged in the cell area and the peripheral area, a plurality of wiring lines on the filling insulation layer, and a first wiring contact plug electrically connecting at least one of the plurality of wiring lines to the upper electrode. The upper electrode includes a first upper electrode layer covering the plurality of capacitor dielectric layers and including a semiconductor material and a second upper electrode layer covering the first upper electrode layer and including a metallic material.

Abstract: An electronic device is provided. The electronic device includes a housing including a first plate, a second plate, and a side member, a metal structure of which a part is connected to the side member, and a printed circuit board. The side member includes a first conductive portion, a second conductive portion, a third conductive portion, a first segment formed between the first conductive portion and the second conductive portion, and a second segment formed between the first conductive portion and the third conductive portion. The first conductive portion is connected to a first ground part disposed on the printed circuit board through a first path, and is connected to a second ground part disposed on the metal structure through a second path spaced from the first path by a specific distance.

Abstract: Provided is an electronic device including a semiconductor substrate, a single-crystal first transition metal oxide layer on the semiconductor substrate, and a single-crystal second transition metal oxide layer spaced apart from the semiconductor substrate with the single-crystal first transition metal oxide layer interposed therebetween. The first transition metal oxide layer and the second transition metal oxide layer are in contact with each other. The semiconductor substrate, the first transition metal oxide layer, and the second transition metal oxide layer include different materials from each other. The first transition metal oxide layer and the second transition metal oxide layer have the same crystal direction.

Abstract: A method for method for manufacturing a rutile titanium dioxide layer according to the inventive concept includes forming a sacrificial layer on a substrate, and depositing a titanium dioxide (TiO2) material on the sacrificial layer. The sacrificial layer includes a metal oxide of a rutile phase. An amount of oxygen vacancy of the sacrificial layer after depositing the titanium dioxide material is greater than an amount of oxygen vacancy of the sacrificial layer before depositing the titanium dioxide material. The metal oxide includes a metal different from titanium (Ti).

Abstract: A method for method for manufacturing a rutile titanium dioxide layer according to the inventive concept includes forming a sacrificial layer on a substrate, and depositing a titanium dioxide (TiO2) material on the sacrificial layer. The sacrificial layer includes a metal oxide of a rutile phase. An amount of oxygen vacancy of the sacrificial layer after depositing the titanium dioxide material is greater than an amount of oxygen vacancy of the sacrificial layer before depositing the titanium dioxide material. The metal oxide includes a metal different from titanium (Ti).

Abstract: The present invention provides a method of real-time detection of a hydrogen content using an oxide-based hydrogen storage element having a tunnel structure, wherein the method detects an amount of hydrogen atoms contained in the hydrogen storage element by real-time measuring resistance of the hydrogen storage element including a metal insulator transition (MIT) layer capable of reversibly storing or releasing the hydrogen atoms.