Patents by Inventor Junxian Li

Junxian Li has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210343904
    Abstract: A flip light emitting chip and a manufacturing method thereof are disclosed, wherein the flip light emitting chip comprises an N-type semiconductor layer, an active region, a P-type semiconductor layer, a reflective layer, a barrier layer, a bonding layer, a first insulating layer, an extended electrode layer, a second insulating layer, an N-type electrode, and a P-type electrode sequentially grown from a substrate. The first insulating layer has at least one first channel and at least one second channel. A first extended electrode portion and a second extended electrode portion of the extended electrode layer are respectively formed on the first insulating layer and extended to the N-type semiconductor layer via the first channel and to the barrier layer via the second channel. The second insulating layer has at least one third channel and at least one fourth channel.
    Type: Application
    Filed: August 14, 2019
    Publication date: November 4, 2021
    Inventors: Yingce LIU, Zhao LIU, Junxian LI, Zhendong WEI, Xingen WU
  • Publication number: 20210336089
    Abstract: A semiconductor light emitting chip includes a substrate and an N-type semiconductor layer sequentially developed from the substrate, an active region, a P-type semiconductor layer, a reflective layer, at least two insulating layers, an anti-diffusion layer and an electrode set. One of the insulating layers is extended to surround the inner peripheral portion of the reflective layer, and another the insulating layer is extended to surround the outer peripheral portion of the reflective layer, such that the insulating layer isolates the anti-diffusion layer from the P-type semiconductor layer. The electrode set includes an N-type electrode and a P-type electrode, wherein the N-type electrode is electrically connected to the N-type semiconductor layer, and the P-type electrode is electrically connected to the P-type semiconductor layer.
    Type: Application
    Filed: July 30, 2019
    Publication date: October 28, 2021
    Inventors: Xingen WU, Yingce LIU, Junxian LI, Zhendong WEI
  • Publication number: 20210091262
    Abstract: A semiconductor chip of a LED and a manufacturing method thereof are disclosed. The semiconductor chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, and at least one semiconductor exposing portion extending from the P-type semiconductor layer to the N-type semiconductor layer. The semiconductor chip further includes one or more current blocking layers, a transparent conductive layer, an N-type electrode, and a P-type electrode, wherein the current blocking layer encapsulates the P-type semiconductor in such a manner to be stacked on the P-type semiconductor layer. The transparent conductive layer has one or more through holes corresponding to the one or more current blocking layers respectively. The N-type electrode is stacked on the N-type semiconductor layer and the P-type electrode is stacked on the N-type semiconductor layer. The P-type prongs of the P-type electrode are retained in the through holes of the transparent conductive layer respectively.
    Type: Application
    Filed: July 16, 2019
    Publication date: March 25, 2021
    Applicant: XIAMEN CHANGELIGHT CO.,LTD.
    Inventors: Xingen WU, Junxian LI, Yingce LIU, Zhendong WEI, Hongyi ZHOU
  • Publication number: 20200251616
    Abstract: A light-emitting diode (LED) sub-chip and a method of producing the same are provided. The LED sub-chip comprises an epitaxial layer disposed on a growth substrate, where the epitaxial layer comprises a plurality of electrodes. The groove disposed between the LED sub-chip and a second LED sub-chip, where the groove penetrates through the epitaxial layer separating the two sub-chips. The bridge insulating layer at least partially covering a sidewall of the groove, where the sidewall comprises a first surface and a second surface above the first surface, where the texture of the second surface is less granular than a texture of the first surface. The bridge electrode on the bridge insulating layer, where the bridge electrode connects respective electrodes of the two sub-chips at the first surface.
    Type: Application
    Filed: November 11, 2019
    Publication date: August 6, 2020
    Applicant: Xiamen Changelight Co. Ltd.
    Inventors: Yingce LIU, Junxian LI, Zhao LIU, Zhendong WEI, Xuan HUANG
  • Publication number: 20200251632
    Abstract: A flip-chip of light emitting diode includes at least one reflective layer, at least one N-type electrode, at least one P-type electrode, at least one distributed Bragg reflector, and an epitaxial unit. The epitaxial unit includes a substrate, an N-type layer, an active layer, and a P-type layer, wherein the substrate, the N-type layer, the active layer, and the P-type are sequentially stacked. The epitaxial unit has at least one N-type layer exposed portion, which is extended from the outer side surface of the P-type layer to the N-type layer via the active layer. The at least one reflective layer is formed on the P-type layer, wherein the at least one distributed Bragg reflector is integrally bonded to the N-type layer, the active layer, the P-type layer, and the at least one reflective layer. The at least one N-type electrode is electrically connected with the N-type layer and the at least one P-type electrode is electrically connected with the P-type layer.
    Type: Application
    Filed: July 31, 2018
    Publication date: August 6, 2020
    Inventors: Xingen WU, Yingce LIU, Junxian LI, Qilong WU
  • Publication number: 20200176635
    Abstract: A LED chip includes a substrate, an N-type semiconductor layer, an active region, a P-type semiconductor layer, a transparent electric conductive layer, and a passivation protective layer stacked with each other in sequence. The passivation protective layer has a plurality holes corresponding to different positions of the transparent electric conductive layer respectively. A P-type electrode is electrically linked with the transparent electric conductive layer through said plurality of holes, while to an N-type electrode is electrically linked with said N-type semiconductor layer.
    Type: Application
    Filed: July 30, 2018
    Publication date: June 4, 2020
    Inventors: Zhendong WEI, Junxian LI, Qilong WU, Yingce LIU, Hongyi ZHOU
  • Publication number: 20200020830
    Abstract: A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).
    Type: Application
    Filed: October 7, 2017
    Publication date: January 16, 2020
    Inventors: Yingce LIU, Bin SONG, Junxian LI, Qilong WU, Yang WANG, Kaixuan CHEN, Zhendong WEI, Xingen WU, Hongyi ZHOU, Lihe CAI, Xinmao HUANG, Zhiwei LIN, Yongtong LI, Qimeng LYU, Hexun CAI, Gengcheng LI
  • Patent number: 10468550
    Abstract: A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.
    Type: Grant
    Filed: December 14, 2018
    Date of Patent: November 5, 2019
    Assignee: XIAMEN CHANGELIGHT CO., LTD.
    Inventors: Zhiwei Lin, Kaixuan Chen, Junxian Li, Xiangjing Zhuo, Qilong Wu
  • Publication number: 20190221709
    Abstract: A light-emitting diode (LED) device and a method of producing the same are provided. The LED device comprises a first conductive layer, a second conductive layer, an active layer sandwiched between the first conductive layer and the second conductive layer and a first electrode in electrical contact with the first conductive layer. The first conductive layer has a laminate structure comprising a first conductive sub-layer, a current blocking layer, and a second conductive sub-layer. The first electrode comprises a first extended electrode in electrical contact with the first conductive sub-layer, and a second extended electrode in electrical contact with the second conductive sub-layer. The first conductive sub-layer and the second conductive sub-layer may have different depths.
    Type: Application
    Filed: December 14, 2018
    Publication date: July 18, 2019
    Applicant: Xiamen Changelight Co. Ltd.
    Inventors: Zhiwei LIN, Kaixuan CHEN, Junxian LI, Xiangjing ZHUO, Qilong WU
  • Patent number: 10333028
    Abstract: According to at least some embodiments of the present disclosure, a light-emitting diode (LED) chip includes a semiconductor material portion, a transparent conductive layer disposed above the semiconductor material portion, a current blocking layer disposed above the transparent conductive layer, one or more electrodes disposed above the current blocking layer, and a plurality of electron outflow channels that electrically interconnect at least one electrode and the semiconductor material portion across the transparent conductive layer and the current blocking layer.
    Type: Grant
    Filed: April 7, 2017
    Date of Patent: June 25, 2019
    Assignee: XIAMEN CHANGELIGHT CO., LTD.
    Inventors: Liang Chen, Junxian Li, Qimeng Lv, Zhendong Wei, Yingce Liu, Xiaoping Li, Xinmao Huang, Kaixuan Chen, Yong Zhang, Zhiwei Lin, Wei Jiang, Xiangjing Zhuo, Tianzu Fang
  • Publication number: 20170294557
    Abstract: According to at least some embodiments of the present disclosure, a light-emitting diode (LED) chip includes a semiconductor material portion, a transparent conductive layer disposed above the semiconductor material portion, a current blocking layer disposed above the transparent conductive layer, one or more electrodes disposed above the current blocking layer, and a plurality of electron outflow channels that electrically interconnect at least one electrode and the semiconductor material portion across the transparent conductive layer and the current blocking layer.
    Type: Application
    Filed: April 7, 2017
    Publication date: October 12, 2017
    Inventors: Liang Chen, Junxian Li, Qimeng Lv, Zhendong Wei, Yingce Liu, Xiaoping Li, Xinmao Huang, Kaixuan Chen, Yong Zhang, Zhiwei Lin, Wei Jiang, Xiangjing Zhuo, Tianzu Fang