Abstract: A semiconductor laser device includes a semiconductor substrate, a light emitting unit, a contact layer, an insulating film, and a first electrode. The contact layer has an electrode connection surface facing the Z direction. The insulating film has a pair of contact layer covering parts that cover both end regions of the electrode connection surface in the X direction, and a first opening that exposes a portion of the electrode connection surface. The first electrode is connected to the electrode connection surface exposed from the first opening. The insulation coverage factor, which is the ratio of the width of the pair of contact layer covering parts in the X direction to the width of the electrode connection surface in the X direction, is 10% or less. The thickness of the contact layer in the Z direction is 2 ?m or greater.

Abstract: A semiconductor laser device includes a light emitting unit including an active layer and an n-type semiconductor layer and a p-type semiconductor layer that sandwich the active layer. The n-type semiconductor layer includes a first n-type cladding layer and a second n-type cladding layer. The p-type semiconductor layer includes a first p-type cladding layer and a second p-type cladding layer. The n-type semiconductor layer has a greater thickness than the p-type semiconductor layer. An n-type thickness ratio, which is a ratio of a thickness of the first n-type cladding layer to a thickness of the second n-type cladding layer, is equal to a p-type thickness ratio, which is a ratio of a thickness of the first p-type cladding layer to a thickness of the second p-type cladding layer. The n-type thickness ratio and the p-type thickness ratio are each greater than 1.25 and less than or equal to 3.75.