Abstract: An exit surface of a light guide plate includes a first position from which first emitted light is emitted within an angular range that causes the first emitted light to be applied to one eye and the vicinity thereof and a second position from which second emitted light is emitted within an angular range that causes the second emitted light to be applied to the other eye and the vicinity thereof. A straight line that passes through the first position and the center of the one eye and a straight line that passes through the second position and the center of the other eye intersect with each other.

Abstract: According to one embodiment, a plurality of memory cell transistors including a floating gate and a control gate and a plurality of peripheral circuit transistors including a lower electrode portion and an upper electrode portion are included. The floating gate includes a first polysilicon region, and the lower electrode includes a second polysilicon region. The first polysilicon region is a p-type semiconductor in which boron is doped, and the second polysilicon region is an n-type semiconductor in which phosphorus and boron are doped.

Abstract: A bicycle control apparatus is basically provided for controlling a bicycle having a drive assistance electric motor. The bicycle control apparatus includes a manual drive force detector, a state detector and a controller. The manual drive force detector is configured to detect a manual drive force. The state detector is configured to detect a state of the bicycle. The controller is programmed to execute calibration of the manual drive force detector upon the controller determining that a prescribed bicycle state condition exists after power of the bicycle control apparatus is turned on.

Abstract: The objective of the present invention is to provide a security monitoring system and a security monitoring method which is capable of a quick operation when an unauthorized access, a malicious program, and the like are detected, while the normal operation of the control system is not interrupted by an erroneous detection. The security monitoring system 100 obtains communication packets in segments 3 which constitutes a control system 1, and extracts a communication packet which has a characteristic value different from a normal value among the obtained communication packets to generate communication event information 150. The security monitoring system 100 predicts a degree of influence on the control system 1 by the communication packet extracted as the communication event information 150 by verifying the communication event information 150 with event patterns which indicate characteristics of the unauthorized access and the like.

Abstract: A production apparatus for an electric storage material includes a dissolution device that dissolves a thickener in a solvent by applying vibration to the solvent, and a kneading device that kneads a solution of the thickener having an adjusted viscosity and an active substance. The thickener is dissolved in the solvent, and a powder of the active substance and the like are dispersed and kneaded in the solution of the thickener having the adjusted viscosity. Thus, kneading can be performed in a short time, and damage to the active substance can be suppressed.

Abstract: A switch unit is provided, comprising: a display part configured to display an image in at least one input area; an input part provided above the display part, the input part comprising a contact, wherein when the input part is pressed toward the at least one input area displayed on the display part, the contact corresponding to the input area is conducted; and an operating button configured to cause conduction of the contact of the input part, the contact corresponding to the input area, by a press-down operation toward the input area of the display part, wherein the operating button is made of a translucent rectangular parallelepiped member, and at least one side wall of the translucent rectangular parallelepiped member is formed into an inclined surface widening outwardly toward bottom of the operating button.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell transistor obtained by sequentially stacking the gate insulation film, the floating gate electrode, the interelectrode insulation film, and the control gate electrode over the channel semiconductor layer. The control gate electrode has a structure obtained by sequentially stacking the semiconductor film, the silicide phase-change suppressing layer, and the silicide film. In addition, the silicide phase-change suppressing layer includes a polycrystalline silicon film in which at least one of C, F, and N is doped in a concentration range of 1×1020 to 5×1021 [atom/cm3].

Abstract: A semiconductor device according to an embodiment, includes a first dielectric film, a floating gate, a second dielectric film, and a third dielectric film. The first dielectric film is formed above a semiconductor substrate. The floating gate is formed above the first dielectric film by using a silicon film. The third dielectric film is formed to cover an upper surface of the floating gate and a side face portion of the floating gate. The floating gate includes an impurity layer formed on an upper surface of the floating gate and a side face of the floating gate along an interface between the floating gate and the third dielectric film formed to cover the upper surface of the floating gate and a side face portion of the floating gate and containing at least one of carbon (C), nitrogen (N), and fluorine (F) as an impurity.

Abstract: A switch unit including operating keys, an LCD that displays an image, lenses that are disposed between the LCD and the operating keys and show the image displayed by the LCD on the operating surfaces of the operating keys, a PCB having contacts that detect when an operating key has been depressed, and a rubber that is disposed between the operating keys and the PCB.

Abstract: A decoration device (6) includes at least one light source (12) emitting light having directivity, a diffusion member (11a) having a diffuse reflective surface for diffusely reflecting light from the light source (12), and a light guide member (13) arranged around the diffusion member at a position anterior to the diffuse reflective surface. The light guide member (13) includes at least one incident surface (13a) facing the at least one light source (12) and an end face (13d) facing the diffusion member of the light guide member (13), wherein the light guide member (13) causes light from the light source (12), the light entering the light guide member (13) through the incident surface (13a), to propagate so as to spread within the light guide member (13), so that the light from the light source (12) exits from an area of the end face (13d), the area being larger than the incident surface (13a), toward the diffuse reflective surface (11a).

Abstract: According to one embodiment, there is provided a method of manufacturing a semiconductor storage device. In the method, any one of Ge, Sn, C, and N is introduced as impurity to a surface of a semiconductor substrate. In the method, the semiconductor substrate is thermally oxidized so that a tunnel insulating film is formed on the surface of the semiconductor substrate to which the impurity is introduced. In the method, a gate having a charge accumulation layer is formed on the tunnel insulating film. In the method, impurity diffusion regions are formed in the semiconductor substrate in a self-aligned manner using the gate.

Abstract: According to one embodiment, a semiconductor memory device includes a multilayer body, a block layer, a charge storage layer, a tunnel layer, and a semiconductor pillar. The multilayer body includes a plurality of insulating films and electrode films alternately stacked. The multilayer body includes a through hole extending in stacking direction of the insulating films and the electrode films. The block layer is provided on an inner surface of the through hole. The charge storage layer is surrounded by the block layer. The tunnel layer is surrounded by the charge storage layer. The semiconductor pillar is surrounded by the tunnel layer. Dielectric constant of a portion of the tunnel layer on a side of the semiconductor pillar is higher than dielectric constant of a portion of the tunnel layer on a side of the charge storage layer.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a memory cell transistor obtained by sequentially stacking the gate insulation film, the floating gate electrode, the interelectrode insulation film, and the control gate electrode over the channel semiconductor layer. The control gate electrode has a structure obtained by sequentially stacking the semiconductor film, the silicide phase-change suppressing layer, and the silicide film. In addition, the silicide phase-change suppressing layer includes a polycrystalline silicon film in which at least one of C, F, and N is doped in a concentration range of 1×1020 to 5×1021 [atom/cm3].

Abstract: A nonvolatile semiconductor storage device is disclosed. The nonvolatile semiconductor storage device includes a semiconductor substrate including a surface layer; an element isolation insulating film isolating the surface layer of the semiconductor device into a plurality of active regions; a first gate insulating film formed above the active regions; a charge storing layer formed above the first gate insulating film and including a silicon layer containing an upper layer selectively doped with carbon; a second gate insulating film formed above the charge storing layer; and a control gate electrode formed above the second gate insulating film.

Abstract: An industrial robot has an arm, a wrist element rotatably interconnected to the arm, a work tool mounted on a distal end of the wrist element, and a motor mounted on the wrist element. An umbilical-member connected to the work tool and a flat cable connected to the motor are disposed to run along the wrist element from the arm side to the work tool or to the motor. A pipe member extending in a direction of a rotation axis of the wrist element is provided inside the arm and the umbilical-member connected to the work tool is passed inside the pipe member. The flat cable connected to the motor is wound around outside of the pipe member, with the flat cable arranged to become slack in a rotating direction of the wrist element.

Abstract: An industrial robot having: an arm, a wrist element rotatably interconnected to the arm, a work tool mounted on a distal end of the wrist element, and a motor mounted on the wrist element; wherein an umbilical-member connected to the work tool and a flat cable connected to the motor are disposed to run along the wrist element from the arm side to aid work tool or to the motor, characterized in that a pipe member extending in a direction of a rotation axis of the wrist element is provided inside the arm, the umbilical-member connected to the work tool being passed inside the pipe member, the flat cable connected to the motor being wound around outside of the pipe member, with the flat cable slacked in a rotating direction of the wrist element.

Abstract: The present invention provides a muscle protein proteolysis inhibiting agent comprising antibody to Interleukin-6 receptor (IL-6R antibody). Antibodies of animals other than humans such as mice and rats, chimeric antibodies of these antibodies with human antibodies, and reshaped human antibodies and so forth can be used for the IL-6R antibody. The muscle protein proteolysis inhibiting agent of the present invention is useful in the inhibition of muscle protein proteolysis observed in diseases such as cancerous cachexia, sepsis, serious trauma or muscular dystrophy.