Abstract: A method of producing a semiconductor wafer includes placing a base wafer within a reaction chamber, and epitaxially growing a p-type Group 3-5 compound semiconductor on the base wafer by supplying, into the reaction chamber, a Group 3 source gas consisting of an organometallic compound of a Group 3 element, a Group 5 source gas consisting of a compound of a Group 5 element, and an impurity gas including an impurity that is to be incorporated as a dopant into a semiconductor to serve as a donor. Here, during the epitaxial growth of the p-type Group 3-5 compound semiconductor, the flow rate of the impurity gas and the flow rate ratio of the Group 5 source gas to the Group 3 source gas are set so that the product N×d (cm?2) of the residual carrier concentration N (cm?3) and the thickness d (cm) of the p-type Group 3-5 compound semiconductor may be 8.0×1011 or less.

Abstract: A method of producing a semiconductor wafer includes placing a base wafer within a reaction chamber, and epitaxially growing a p-type Group 3-5 compound semiconductor on the base wafer by supplying, into the reaction chamber, a Group 3 source gas consisting of an organometallic compound of a Group 3 element, a Group 5 source gas consisting of a compound of a Group 5 element, and an impurity gas including an impurity that is to be incorporated as a dopant into a semiconductor to serve as a donor. Here, during the epitaxial growth of the p-type Group 3-5 compound semiconductor, the flow rate of the impurity gas and the flow rate ratio of the Group 5 source gas to the Group 3 source gas are set so that the product N×d (cm?2) of the residual carrier concentration N (cm?3) and the thickness d (cm) of the p-type Group 3-5 compound semiconductor may be 8.0×1011 or less.

Abstract: An asymmetric dioxazine compound represented, when shown in free acid form, by the general formula (I): ##STR1## wherein T.sub.1 and T.sub.2 represent a hydrogen atom, a chlorine atom, a bromine atom, a lower alkyl group, a phenoxy group or others, A.sub.1 represents an alkyl group, a chlorine atom, a carboxyl group or others, A.sub.2 represents a hydrogen atom, an alkyl group, a chlorine atom, a carboxyl group or others, R represents a hydrogen atom or a lower alkyl group, X and Y represent a halogen atom, a fiber-reactive group or others, respectively, with the proviso that at least one of X and Y is a fiber-reactive group is provided.The compound is suitable for dyeing or printing of a fiber material or the like which has a hydroxy group and/or an amide group, and provides a blue-dyed product with various fastness, including particularly chlorine fastness.

Abstract: An asymmetric dioxazine compound represented, when shown in free acid form, by the general formula (I): ##STR1## wherein T.sub.1 and T.sub.2 represent a hydrogen atom, a chlorine atom, a bromine atom, a lower alkyl group, a phenoxy group or others, A.sub.1 represents an alkyl group, a chlorine atom, a carboxyl group or others, A.sub.2 represents a hydrogen atom, an alkyl group, a chlorine atom, a carboxyl group or others, R represents a hydrogen atom or a lower alkyl group, X and Y represent a halogen atom, a fiber-reactive group or others, respectively, with the proviso that at least one of X and Y is a fiber-reactive group is provided.The compound is suitable for dyeing or printing of a fiber material or the like which has a hydroxy group and/or an amide group, and provides a blue-dyed product with various fastness, including particularly chlorine fastness.

Abstract: An asymmetric dioxazine compound of the following formula: ##STR1## wherein R is sulfo, halogeno, alkoxy, alkyl or carboxy; R.sub.1 and R.sub.2 are each hydrogen or alkyl; R.sub.3 is hydrogen, alkyl or acyl; X.sub.1 and X.sub.2 are each hydrogen, halogeno, alkyl, alkoxy or phenoxy; Y is aliphatic amino having a vinylsulfonyl or .beta.-substituted ethylsulfonyl fiber-reactive group; and Q is unsubstitued, substituted or cyclic amino; is useful for dyeing or printing fiber materials blue with excellence in build-up properties and various fastness properties.