Abstract: A semiconductor device with an antenna includes a heat sink having first and second surfaces, a semiconductor chip provided on the second surface and having a circuit surface, a wiring board having a laminate of alternately disposed insulating layers and interconnect layers, and covering side surfaces of the heat sink and the semiconductor chip and the circuit surface, and exposing the first surface, and an antenna provided on the wiring board. The wiring board includes a board connecting part provided on an opposite side from the antenna, a first interconnect electrically connecting the board connecting part and a first terminal provided on the circuit surface, and a second interconnect electrically connecting the antenna and a second terminal provided on the circuit surface.

Abstract: A new substrate manufacturing method of obtaining a SiC epitaxial substrate having excellent flatness and a SiC epitaxial substrate having excellent flatness are provided. In a SiC epitaxial substrate having an epitaxial film obtained by epitaxially growing silicon carbide on a front surface of a silicon carbide substrate, the SiC epitaxial substrate has a first main surface made of the epitaxial film and a second main surface opposite to the first main surface. A maximum value of SBIR on the second main surface based on a 10 mm square site satisfies a condition of 0.1 µm or more and 1.5 µm or less.

Abstract: The present invention relates to a medicament for treating neuropsychiatric diseases, comprising a compound of Formula (1): or a pharmaceutically acceptable salt thereof, as an active ingredient.

Abstract: The present invention relates to a medicament for treating neuropsychiatric diseases, comprising a compound of Formula (1): or a pharmaceutically acceptable salt thereof, as an active ingredient.

Abstract: A semiconductor device includes: a semiconductor substrate; an electrode pad disposed over a first face of the semiconductor substrate; a redistribution layer electrically connected to the electrode pad; a through hole disposed in the semiconductor substrate so as to extend from a second face opposite to the first face of the semiconductor substrate to the electrode pad; an electrically conductive film covering an inner wall of the through hole, and electrically connected to the electrode pad; an electrically conductive adhesive disposed on a side of the second face of the semiconductor substrate, and electrically connected to the electrode pad via the electrically conductive film; a heat radiating member bonded to the second face of the semiconductor substrate with the electrically conductive adhesive; and a filling member with which the through hole is filled, the filling member being lower in coefficient of thermal expansion than the electrically conductive adhesive.

Abstract: A semiconductor device includes: a semiconductor substrate; an electrode pad disposed over a first face of the semiconductor substrate; a redistribution layer electrically connected to the electrode pad; a through hole disposed in the semiconductor substrate so as to extend from a second face opposite to the first face of the semiconductor substrate to the electrode pad; an electrically conductive film covering an inner wall of the through hole, and electrically connected to the electrode pad; an electrically conductive adhesive disposed on a side of the second face of the semiconductor substrate, and electrically connected to the electrode pad via the electrically conductive film; a heat radiating member bonded to the second face of the semiconductor substrate with the electrically conductive adhesive; and a filling member with which the through hole is filled, the filling member being lower in coefficient of thermal expansion than the electrically conductive adhesive.

Abstract: The present invention relates to a medicament for treating neuropsychiatric diseases, comprising a compound of Formula (1): or a pharmaceutically acceptable salt thereof, as an active ingredient.

Abstract: The present invention relates to a medicament for treating neuropsychiatric diseases, comprising a compound of Formula (1): or a pharmaceutically acceptable salt thereof, as an active ingredient.

Abstract: The present invention relates to a medicament for treating neuropsychiatric diseases, comprising a compound of Formula (1): or a pharmaceutically acceptable salt thereof, as an active ingredient.

Abstract: A wiring board includes a base board and a plurality of wiring layers formed of a resin insulating film on the base board, wherein at least one of the wiring layers includes a fine wiring, a barrier film, which is not in contact with the fine wiring, is formed at a more outer side from the base board than the wiring layer including the fine wiring, and different types of resin insulating films are used for a wiring layer at an inner side of the barrier film close to the base board and a wiring layer at an outer side of the barrier film, respectively.

Abstract: A wiring board includes a base board and a plurality of wiring layers formed of a resin insulating film on the base board, wherein at least one of the wiring layers includes a fine wiring, a barrier film, which is not in contact with the fine wiring, is formed at a more outer side than the base board than the wiring layer including the fine wiring, and different types of resin insulating films are used for a wiring layer at an inner side of the barrier film close to the base board and a wiring layer at an outer side of the barrier film, respectively.

Abstract: An electronic device includes: a substrate; a Cu-containing wiring layer formed over the substrate; a barrier metal layer that covers a surface of the Cu-containing wiring layer and suppresses diffusion of Cu; and a coating insulating layer that covers the barrier metal layer, wherein the barrier metal layer has a void that does not reach the Cu-containing wiring layer, and the void is filled with the coating insulating layer.

Abstract: The present invention relates to a novel indazole- or pyrrolopyridine-derivative comprising a 5 membered heterocyclic substituent at 1 position thereof which has an agonistic action or a partial agonistic action against serotonin-4 receptor, and a pharmaceutical composition comprising the same.

Abstract: The present invention relates to a compound of the following formula (I) or a pharmaceutically acceptable salt thereof, being useful as a renin inhibitor. [wherein R1a is halogen, etc.; R1m is H, etc.; G1 is —N(R1b)—, etc.; G2 is —CO—, etc.; G3 is —C(R1c)(R1d)—, etc.; G4 is oxygen, etc.; R1b is optionally substituted C1-6 alkyl, etc.; R1c and R1d are independently the same or different, H, etc.; R3 is H, optionally substituted C1-6 alkyl, etc.; R3a, R3b, R3c and R3d are independently the same or different, and a group: -A-B (said A is single bond, etc., and said B is H, etc.), etc.; and n is 1, etc.

Abstract: The present invention relates to a compound of the following formula (I) or a pharmaceutically acceptable salt thereof, being useful as a renin inhibitor. [wherein R1a is halogen, etc.; R1m is H, etc.; G1 is —N(R1b)—, etc.; G2 is —CO—, etc.; G3 is —C(R1c)(R1d)—, etc.; G4 is oxygen, etc.; R1b is optionally substituted C1-6 alkyl, etc.; R1c and R1d are independently the same or different, H, etc.; R3 is H, optionally substituted C1-6 alkyl, etc.; R3a, R3b, R3c and R3d are independently the same or different, and a group: -A-B (said A is single bond, etc., and said B is H, etc.), etc.; and n is 1, etc.

Abstract: Provided are: a five-membered ring compound represented by formula (1) or a pharmaceutically acceptable salt thereof; and a medicine containing the compound or salt. The compound or salt inhibits the infiltration of leukocytes such as eosinophils and lymphocytes, is effective as a therapeutic agent for various kinds of inflammation, and is so safe that the compound or salt can be taken for long. In formula (1), R1 is (substituted) phenyl or pyridyl; R2 is (substituted) pyrazinediyl, pyrimidinediyl, or pyridazinediyl; R3 to R5 each is alkyl (provided that —N(R4)R5 may be morpholino); and Y2 is alkylene.

Abstract: A magnetoresistive film is formed on the surface of a lower electrode layer in a method of making a current-perpendicular-to-the-plane structure magnetoresistive element. The magnetoresistive film includes a lower portion and an upper portion overlaid on the lower portion. The lower portion includes at least a pinned magnetic layer. The upper portion includes at least a free magnetic layer. A pair of domain control magnetic layers is formed to sandwich the magnetoresistive film. An insulator film is formed to cover over the domain control magnetic layers. The upper portion is subjected to an etching process. The domain control magnetic layers are reliably prevented from being removed during the etching process. Accordingly, the domain control magnetic layers are allowed to reliably sandwich the upper portion of the magnetoresistive film in the aforementioned manner.

Abstract: A magnetoresistive sensor including the following layers, in order: a first conductor layer; a first antiferromagnetic layer; a first pinned ferromagnetic layer; a first nonmagnetic intermediate layer; a free ferromagnetic layer; a second nonmagnetic intermediate layer; a second pinned ferromagnetic layer; a second antiferromagnetic layer; and a second conductor layer. Alternatively, the magnetoresistive sensor may include the following layers, in order: a first conductor layer; a first free ferromagnetic layer; a first nonmagnetic intermediate layer; a first pinned ferromagnetic layer; an antiferromagnetic layer; a second pinned ferromagnetic layer; a second nonmagnetic intermediate layer; a second free ferromagnetic layer; and a second conductor layer.

Abstract: The upper portion of a magnetoresistive film is interposed between insulators in the lateral direction of a recording track in a current-perpendicular-to-the-plane structure magnetoresistive element. Domain control magnetic layers sandwich the upper portion of the magnetoresistive film along with the insulators in the lateral direction. The insulators serve to establish a narrower path for electric current between the lower portion of the magnetoresistive film and an upper electrode layer. The substantial width in the lateral direction can thus be reduced in the magnetoresistive film. In addition, a longitudinal biasing magnetic field established between the domain control magnetic layers efficiently acts on the magnetoresistive film. In particular, if a free magnetic layer is included in the upper portion of the magnetoresistive film, the free magnetic layer can be subjected to a larger longitudinal biasing magnetic field. A single domain property can be realized in the free ferromagnetic layer enough.

Abstract: The upper portion of a magnetoresistive film is interposed between insulators in the lateral direction of a recording track in a current-perpendicular-to-the-plane structure magnetoresistive element. Domain control magnetic layers sandwich the upper portion of the magnetoresistive film along with the insulators in the lateral direction. The insulators serve to establish a narrower path for electric current between the lower portion of the magnetoresistive film and an upper electrode layer. The substantial width in the lateral direction can thus be reduced in the magnetoresistive film. In addition, a longitudinal biasing magnetic field established between the domain control magnetic layers efficiently acts on the magnetoresistive film. In particular, if a free magnetic layer is included in the upper portion of the magnetoresistive film, the free magnetic layer can be subjected to a larger longitudinal biasing magnetic field. A single domain property can be realized in the free ferromagnetic layer enough.