Abstract: A semiconductor device includes an interlayer insulating layer disposed over a semiconductor substrate, and including a plurality of wiring layers; a seal ring disposed in the interlayer insulating layer, and surrounding a circuit region of the semiconductor substrate; a crack lead ring disposed in the interlayer insulating layer, and surrounding the seal ring; and a protective film disposed over the interlayer insulating layer, and covering the crack lead ring and the seal ring. The crack lead ring includes an uppermost wiring layer in an uppermost layer of a plurality of wiring layers. When the crack lead ring has a wiring in an underlayer below the uppermost layer, the uppermost layer wiring extends towards the outside of the device, relative to the wiring in the underlayer. The protective film has an end overlapped with an end of the uppermost layer wiring to form a step over the interlayer insulating layer.

Abstract: A semiconductor device an interlayer insulating layer disposed over a semiconductor substrate, and including a plurality of wiring layers; a seal ring disposed in the interlayer insulating layer, and surrounding a circuit region of the semiconductor substrate; a crack lead ring disposed in the interlayer insulating layer, and surrounding the seal ring; and a protective film disposed over the interlayer insulating layer, and covering the crack lead ring and the seal ring. The crack lead ring includes an uppermost wiring layer in an uppermost layer of a plurality of wiring layers. When the crack lead ring has a wiring in an underlayer below the uppermost layer, the uppermost layer wiring extends towards the outside of the device, relative to the wiring in the underlayer. The protective film has an end overlapped with an end of the uppermost layer wiring to form a step over the interlayer insulating layer.

Abstract: It is an object of the present invention to provide an alkaline earth metal aluminate phosphor having good heat resistance and durability against vacuum ultraviolet rays and ultraviolet rays, among others, and a method of producing the same. An alkaline earth metal aluminate phosphor containing bivalent europium as an activator, which contains at least one element (e) selected from the group consisting of indium, tungsten, niobium, bismuth, molybdenum, tantalum, thallium and lead.

Abstract: It is an object of the present invention to provide an alkaline earth metal aluminate phosphor having good heat resistance and durability against vacuum ultraviolet rays and ultraviolet rays, among others, and a method of producing the same. An alkaline earth metal aluminate phosphor containing bivalent europium as an activator, which contains at least one element (e) selected from the group consisting of indium, tungsten, niobium, bismuth, molybdenum, tantalum, thallium and lead.

Abstract: A test method for a semiconductor device in which a bonding pad thereof comprises a first interconnect layer and a second interconnect layer, the bonding pad comprising: a plurality of connection parts, provided within a plurality of slit-shaped trenches formed in an interlayer insulation film, respectively, and connecting the first interconnect layer and the second interconnect layer, the connection parts being disposed in one direction with a prescribed spacing, wherein the method comprising; contacting a test probe for testing the semiconductor device with the bonding pads so as to be in a direction parallel to a longitudinal direction of the connection part.

Abstract: A test method for a semiconductor device in which a bonding pad thereof comprises a first interconnect layer and a second interconnect layer, the bonding pad comprising: a plurality of connection parts, provided within a plurality of slit-shaped trenches formed in an interlayer insulation film, respectively, and connecting the first interconnect layer and the second interconnect layer, the connection parts being disposed in one direction with a prescribed spacing, wherein the method comprising; contacting a test probe for testing the semiconductor device with the bonding pads so as to be in a direction parallel to a longitudinal direction of the connection part.

Abstract: A test method for a semiconductor device in which a bonding pad thereof comprises a first interconnect layer and a second interconnect layer, the bonding pad comprising: a plurality of connection parts, provided within a plurality of slit-shaped trenches formed in an interlayer insulation film, respectively, and connecting the first interconnect layer and the second interconnect layer, the connection parts being disposed in one direction with a prescribed spacing, wherein the method comprising; contacting a test probe for testing the semiconductor device with the bonding pads so as to be in a direction parallel to a longitudinal direction of the connection part.

Abstract: A test method for a semiconductor device in which a bonding pad thereof comprises a first interconnect layer and a second interconnect layer, the bonding pad comprising: a plurality of connection parts, provided within a plurality of slit-shaped trenches formed in an interlayer insulation film, respectively, and connecting the first interconnect layer and the second interconnect layer, the connection parts being disposed in one direction with a prescribed spacing, wherein the method comprising; contacting a test probe for testing the semiconductor device with the bonding pads so as to be in a direction parallel to a longitudinal direction of the connection part.

Abstract: A bandpass filter for the transmission of signals within a predetermined frequency bandwidth having a center frequency, which provides for substantial attenuation of the harmonic components of the center frequency of the filter. The bandpass filter includes at least one resonator comprising a strip conductor and a ground conductor formed on the surface of a dielectric substrate. The strip conductor is capacitively coupled to the ground conductor so as to substantially transmit the harmonic components of the center frequency of the filter to ground.