Abstract: A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first main surface side as p type and a second main surface side as n type, a light extraction side electrode is formed to cover the first main surface partially. An n-type transparent device substrate composed of Group III-V compound semiconductor having greater band gap energy than the active layer is bonded to the second main surface of the bonding object layer. On one sides of the transparent device substrate and the bonding object layer, a bonding surface to the other is formed, and an InGaP intermediate layer is formed to have a high concentration Si doping layer formed on the bonding surface side.

Abstract: A light emitting device comprises a light emitting layer section having a double heterostructure of an n-type cladding layer, an active layer and a p-type cladding layer, each composed of AlGaInP stacked in this order. Supposing a bonding object layer having a first main surface side as p type and a second main surface side as n type, a light extraction side electrode is formed to cover the first main surface partially. An n-type transparent device substrate composed of Group III-V compound semiconductor having greater band gap energy than the active layer is bonded to the second main surface of the bonding object layer. On one sides of the transparent device substrate and the bonding object layer, a bonding surface to the other is formed, and an InGaP intermediate layer is formed to have a high concentration Si doping layer formed on the bonding surface side.

Abstract: A p-n junction interface 3 is formed between an n-type ZnTe1-xOx (0.5?x?1) layer 8 and a p-type ZnTe1-xOx (0?x<0.5) layer 7, and the n-type ZnTeO layer 8 and/or p-type ZnTeO layer 7 are formed by thermal oxidation of the main surficial side of a p-type ZnTe wafer. This is successful in providing a Zn-base semiconductor light emitting device and a method of fabricating thereof possibly be improved in the emission efficiency at a light emitting layer composed of a Zn-base semiconductor light emitting device.

Abstract: A light emitting device 1 has formed therein a light emitting layer section 24 based on a double heterostructure in which a p-type cladding layer 34, an active layer 33 and an n-type cladding layer 32, individually composed of a MgaZn1-aO (0?a?1) type oxide, are stacked in this order, and uses a face on the n-type cladding layer side as a light extraction surface. The device also has, as being provided on the main surface on the light extraction surface side of the n-type cladding layer 32, an n-type low resistivity layer 35 composed of a MgaZn1-aO type oxide, and having a content of an n-type dopant larger than that in the n-type cladding layer 32. There is thus provided a light emitting device of MgaZn1-aO-type oxide base, excellent in the light extraction efficiency, having the light emitting layer section composed of a MgaZn1-aO-type oxide, and a high conductivity MgZnO-base compound semiconductor layer disposed on the light extraction surface side.

Abstract: On the surface of a substrate 1, a precursory buffer layer 2? composed of an In-base compound or a Zn-base compound, not contained in the substrate 1, is formed so as to be stacked thereon as a polycrystal layer or an amorphous layer. Before a light emitting region is formed, the precursory buffer layer 2? is annealed for re-crystallization to thereby convert it into a buffer layer 2. This successfully provides a Zn-base semiconductor light emitting device which can readily be fabricated and capable of improving quality of the light emitting region, and a method of fabricating the same.

Abstract: A p-n junction interface 3 is formed between an n-type ZnTe1-x(0.5?x?1) layer 8 and a p-type ZnTe1-x(0?x<0.5) layer 7, and the n-type ZnTeO layer 8 and/or p-type ZnTeO layer 7 are formed by thermal oxidation of the main surficial side of a p-type ZnTe wafer. This is successful in providing a Zn-base semiconductor light emitting device and a method of fabricating thereof possibly be improved in the emission efficiency at a light emitting layer composed of a Zn-base semiconductor light emitting device.

Abstract: A light emitting device 100 has a light emitting layer portion 9 which comprises an active layer 5 composed of an MgxZn1-xO-type oxide semiconductor, a p-type cladding layer 6 again composed of an MgxZn1-xO-type oxide semiconductor, and an n-type cladding layer 3. On the p-type cladding layer 6 of the light emitting layer portion 9, a light extraction layer 7 is configured using an oxide, where the light extraction layer 7 has a refractive index at a dominant emission wavelength of light extracted from the active layer 5 smaller than that of the cladding layers 3,6. This makes it possible to efficiently extract the light emitted from the light emitting layer portion 9 to the external of the light emitting device 100. This is it successful in providing a high-light-extraction-efficiency light emitting device having the light emitting layer portion composed of an oxide semiconductor, and a method of fabricating the same.

Abstract: In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

Abstract: In a MgZnO layer composing an active layer or a p-type cladding layer 32, a p-type oxide layer 32b which is different from MgaZn1-aO-type oxide and has a p-type conductivity is disposed. Because a function of absorbing and compensating electrons in this configuration is owned by the p-type oxide layer localized in the MgZnO layer, it is no more necessary to add a large amount of dopant, and this is successful in obtaining a p-type or i-type MgaZn1-aO-type oxide having a desirable quality, and in realizing a high-emission-efficiency, light-emitting device capable of emitting ultraviolet or blue light.

Abstract: In a first invention, a p-type MgxZn1-xO-type layer is grown based on a metal organic vapor-phase epitaxy process by supplying organometallic gases which serves as a metal source, an oxygen component source gas and a p-type dopant gas into a reaction vessel. During and/or after completion of the growth of the p-type MgxZn1-xO-type layer, the MgxZn1-xO-type thereof is annealed in an oxygen-containing atmosphere. This is successful in forming the layer of p-type oxide in a highly reproducible and stable manner for use in light emitting device having the layer of p-type oxide of Zn and Mg. In a second invention, a semiconductor layer which composes the light emitting layer portion is grown by introducing source gases in a reaction vessel having the substrate housed therein, and by depositing a semiconductor material produced by chemical reactions of the source gas on the main surface of the substrate.

Abstract: When a p-type MgxZn1-xO-type layer is grown based on a metal organic vapor-phase epitaxy process, the p-type MgxZn1-xO-type layer is annealed in an oxygen-containing atmosphere during and/or after completion of the growth of the p-type MgxZn1-xO-type layer. In addition, a vapor-phase epitaxy process of a semiconductor layer is proceed while irradiating ultraviolet light to the surface of a substrate to be grown and source gasses. In addition, when a MgxZn1-xO-type buffer layer that is oriented so as to align the c-axis thereof to a thickness-wise direction is formed by an atomic layer epitaxy process, a metal monoatomic layer is grown at first. In addition, a ZnO-base semiconductor active layer is formed by using a semiconductor material mainly composed of ZnO containing Se or Te. A light emitting device is formed by using these techniques.

Abstract: On the surface of a substrate 1, a precursory buffer layer 2? composed of an In-base compound or a Zn-base compound, not contained in the substrate 1, is formed so as to be stacked thereon as a polycrystal layer or an amorphous layer. Before a light emitting region is formed, the precursory buffer layer 2? is annealed for re-crystallization to thereby convert it into a buffer layer 2. This successfully provides a Zn-base semiconductor light emitting device which can readily be fabricated and capable of improving quality of the light emitting region, and a method of fabricating the same.

Abstract: A p-n junction interface 3 is formed between an n-type ZnTe1-xOx (0.5?x?1) layer 8 and a p-type ZnTe1-xOx (0?x<0.5) layer 7, and the n-type ZnTeO layer 8 and/or p-type ZnTeO layer 7 are formed by thermal oxidation of the main surficial side of a p-type ZnTe wafer. This is successful in providing a Zn-base semiconductor light emitting device and a method of fabricating thereof possibly be improved in the emission efficiency at a light emitting layer composed of a Zn-base semiconductor light emitting device.

Abstract: In a MgZnO layer composing an active layer or a p-type cladding layer 32, a p-type oxide layer 32b which is different from MgaZn1-aO-type oxide and has a p-type conductivity is disposed. Because a function of absorbing and compensating electrons in this configuration is owned by the p-type oxide layer localized in the MgZnO layer, it is no more necessary to add a large amount of dopant, and this is successful in obtaining a p-type or i-type MgaZn1-aO-type oxide having a desirable quality, and in realizing a high-emission-efficiency, light-emitting device capable of emitting ultraviolet or blue light.

Abstract: A light emitting device 100 has a light emitting layer portion 9 which comprises an active layer 5 composed of an MgxZn1-xO-type oxide semiconductor, a p-type cladding layer 6 again composed of an MgxZn1-xO-type oxide semiconductor, and an n-type cladding layer 3. On the p-type cladding layer 6 of the light emitting layer portion 9, a light extraction layer 7 is configured using an oxide, where the light extraction layer 7 has a refractive index at a dominant emission wavelength of light extracted from the active layer 5 smaller than that of the cladding layers 3,6. This makes it possible to efficiently extract the light emitted from the light emitting layer portion 9 to the external of the light emitting device 100. This is it successful in providing a high-light-extraction-efficiency light emitting device having the light emitting layer portion composed of an oxide semiconductor, and a method of fabricating the same.

Abstract: In a light-emitting device, a light-emitting layer portion composed of a compound semiconductor is bonded on one main surface of a transparent conductive semiconductor substrate while placing a substrate-bonding conductive oxide layer composed of a conductive oxide in between. Between the light-emitting layer portion and the substrate-bonding conductive oxide layer, a contact layer for reducing junction resistance with the substrate-bonding conductive oxide layer so as to contact with the substrate-bonding conductive oxide layer. This is successful in providing the light-emitting device which is producible at low costs, has a low series resistance, and can attain a sufficient emission efficiency despite it has a thick current-spreading layer.

Abstract: In a first invention, a p-type MgxZn1−xO-type layer is grown based on a metal organic vapor-phase epitaxy process by supplying organometallic gases which serves as a metal source, an oxygen component source gas and a p-type dopant gas into a reaction vessel. During and/or after completion of the growth of the p-type MgxZn1−xO-type layer, the MgxZn1−xO-type thereof is annealed in an oxygen-containing atmosphere. This is successful in forming the layer of p-type oxide in a highly reproducible and stable manner for use in light emitting device having the layer of p-type oxide of Zn and Mg. In a second invention, a semiconductor layer which composes the light emitting layer portion is grown by introducing source gases in a reaction vessel having the substrate housed therein, and by depositing a semiconductor material produced by chemical reactions of the source gas on the main surface of the substrate.

Abstract: A light emitting device 1 has a light emitting layer portion in which a p-type cladding layer 2, an active layer 33 and an n-type cladding layer 34 are stacked in this order, and the p-type cladding layer 2 is composed of a p-type MgxZn1-xO (where, 0<x≦1) layer. By forming these layers by the MOVPE process, oxygen deficiency during the film formation is effectively prevented from occurring, and a p-type MgxZn1-xO layer having desirable characteristics can be obtained.