Abstract: To provide a temporary bonding adhesive for a semiconductor wafer that reduces damage to a semiconductor wafer, makes it readily detachable, and can shorten the time required for thermal decomposition, and a manufacturing method for a semiconductor device using this. A temporary bonding adhesive for a semiconductor wafer, being a temporary bonding adhesive used for temporarily bonding a semiconductor wafer onto a supporting substrate in order to process a semiconductor wafer, and for detaching a semiconductor wafer from a supporting substrate by heating after processing, containing a resin composition whereof the 50% weight loss temperature decreases after irradiation by active energy rays.

Abstract: An object of the invention is to provide a method of manufacturing a light-emitting element, in which residue from a fixing resin layer is less likely to be left on a semiconductor layer and a supporting base in the case of manufacturing the light-emitting element by a laser lift-off technique. Furthermore, another object of the invention is to provide a highly reliable light-emitting element that is manufactured by the method of the present invention. The above-described objects are accomplished by applying a thermally decomposable resin composition as a fixing resin layer that fixes the semiconductor layer to a supporting base, and by thermally decomposing the fixing resin layer at the time of peeling off the semiconductor layer from the supporting base.

Abstract: A method of manufacturing a light receiving device 1 includes: providing a resin layer 14 containing a photo curing resin on a transparent substrate 13 where a plurality of transparent substrate portions 13A are integrated so that the resin layer covers the transparent substrate 13; selectively irradiating the resin layer 14 with light, followed by a developing process, so that the resin layer 14 remains in regions of the transparent substrate 13 which surround portions corresponding to regions facing light receiving portions 11 in the transparent substrate portions 13A; dividing the transparent substrate 13 into units of transparent substrate portions 13A so that a plurality of transparent substrate portions 13A are obtained; dividing the base substrate 12 into units of base substrate portions 12A so that a plurality of base substrate portions 12A are obtained; and joining the base substrate portions 12A and the transparent substrate portions 13A via the resin layer 14.

Abstract: Disclosed is a method for manufacturing an electronic device, the method including: placing an electronic component on a substrate 11; forming standing portions 13 on the surface of the substrate 11 on which the electronic component 10 is placed, the standing portions 13 comprising a thermally decomposable resin; applying an encapsulating material 14 so as to encapsulate the electronic component 10 and cover around the standing portions 13 while exposing a portion of each of the standing portions 13 from the surface of the encapsulating material 14; heating the standing portions 13 to decompose and remove the standing portions 13, thereby forming holes 141 through the encapsulating material 14; and placing a conductive material 15 in the holes 141.

Abstract: To provide a temporary bonding adhesive for a semiconductor wafer that reduces damage to a semiconductor wafer, makes it readily detachable, and can shorten the time required for thermal decomposition, and a manufacturing method for a semiconductor device using this. A temporary bonding adhesive for a semiconductor wafer, being a temporary bonding adhesive used for temporarily bonding a semiconductor wafer onto a supporting substrate in order to process a semiconductor wafer, and for detaching a semiconductor wafer from a supporting substrate by heating after processing, containing a resin composition composition whereof the 50% weight loss temperature decreases after irradiation by active energy rays.

Abstract: To provide a temporary bonding adhesive for a semiconductor wafer that can reduce damage to the semiconductor wafer, is easily detachable, and can shorten the time required for thermal decomposition, and a manufacturing method for a semiconductor device using the same. A temporary bonding adhesive for a semiconductor device is provided, being a temporary bonding adhesive used for temporarily bonding a semiconductor wafer onto a supporting substrate in order to process a semiconductor wafer, and for detaching a semiconductor wafer from a supporting substrate by heating after processing, containing a resin composition such that the difference between the 95% weight loss temperature and the 5% weight loss temperature is 1 degree Celsius?(95% weight loss temperature)?(5% weight loss temperature)?300 degrees Celsius.

Abstract: Vinyl addition polymer compositions, methods for forming such compositions, methods for using such compositions to form microelectronic and optoelectronic devices are provided. The vinyl addition polymer encompassed by such compositions has a polymer backbone having two or more distinct types of repeat units derived from norbornene-type monomers independently selected from monomers of Formula I: wherein each of X, m, R1, R2, R3, and R4 is as defined herein and wherein a first type of repeat unit is derived from a glycidyl ether substituted norbornene monomer and a second type of repeat unit is derived from an aralkyl substituted norbornene monomer.

Abstract: A resin composition of the present invention is used for forming a filling material which fills at least a through-hole of a semiconductor substrate, the through-hole extending through the semiconductor substrate in a thickness direction thereof and having a conductive portion therein. The resin composition is composed of: a resin having a radical-polymerizable double bond, a thermosetting resin and a resin which differs from the resin having the radical-polymerizable double bond and has an alkali-soluble group and a double bond; or a cyclic olefin resin. A filling material of the present invention is formed of a cured product of the above resin composition. An insulating layer of the present invention is formed of a cured product of the above resin composition. The insulating layer includes: a layer-shaped insulating portion provided on a surface opposite to a functional surface of the semiconductor substrate; and a filling portion integrally formed with the insulating portion and filling the through-hole.

Abstract: Disclosed is a semiconductor wafer which is characterized in that a resin layer composed of a resin composition containing a cyclic olefin resin (A) having an epoxy group and a photoacid generator (B) is arranged on a surface on which a circuit element is formed, and the residual stress of the resin layer after curing is 1-20 MPa. Also disclosed is a semiconductor device comprising such a semiconductor wafer.

Abstract: Disclosed is a semiconductor device having a wafer level package structure which is characterized by containing a resin layer composed of a resin composition which is curable at 250° C. or less. Such a semiconductor device having a wafer level package structure is excellent in low stress properties, solvent resistance, low water absorbency, electrical insulation properties, adhesiveness and the like.

Abstract: A resin composition of the present invention is used for forming a filling material which fills at least a through-hole of a semiconductor substrate, the through-hole extending through the semiconductor substrate in a thickness direction thereof and having a conductive portion therein. The resin composition is composed of: a resin having a radical-polymerizable double bond, a thermosetting resin and a resin which differs from the resin having the radical-polymerizable double bond and has an alkali-soluble group and a double bond; or a cyclic olefin resin. A filling material of the present invention is formed of a cured product of the above resin composition. An insulating layer of the present invention is formed of a cured product of the above resin composition. The insulating layer includes: a layer-shaped insulating portion provided on a surface opposite to a functional surface of the semiconductor substrate; and a filling portion integrally formed with the insulating portion and filling the through-hole.

Abstract: Disclosed is a semiconductor device having a wafer level package structure which is characterized by containing a resin layer composed of a resin composition which is curable at 250° C. or less. Such a semiconductor device having a wafer level package structure is excellent in low stress properties, solvent resistance, low water absorbency, electrical insulation properties, adhesiveness and the like.

Abstract: A method of manufacturing a light receiving device 1 includes: providing a resin layer 14 containing a photo curing resin on a transparent substrate 13 where a plurality of transparent substrate portions 13A are integrated so that the resin layer covers the transparent substrate 13; selectively irradiating the resin layer 14 with light, followed by a developing process, so that the resin layer 14 remains in regions of the transparent substrate 13 which surround portions corresponding to regions facing light receiving portions 11 in the transparent substrate portions 13A; dividing the transparent substrate 13 into units of transparent substrate portions 13A so that a plurality of transparent substrate portions 13A are obtained; dividing the base substrate 12 into units of base substrate portions 12A so that a plurality of base substrate portions 12A are obtained; and joining the base substrate portions 12A and the transparent substrate portions 13A via the resin layer 14.

Abstract: Vinyl addition polymer compositions, methods for forming such compositions, methods for using such compositions to form microelectronic and optoelectronic devices are provided. The vinyl addition polymer encompassed by such compositions has a polymer backbone having two or more distinct types of repeat units derived from norbornene-type monomers independently selected from monomers of Formula I: wherein each of X, m, R1, R2, R3, and R4 is as defined herein and wherein a first type of repeat unit is derived from a glycidyl ether substituted norbornene monomer and a second type of repeat unit is derived from an aralkyl substituted norbornene monomer.

Abstract: Disclosed is a light-receiving device comprising a substrate provided with at least one light-receiving element and a transparent cover (6) arranged above the surface of the substrate on which the light-receiving element is formed. A sealing member (5) is provided between the substrate and the transparent cover (6) at least in the region of the substrate surrounding the light-receiving element. This sealing member (5) is composed of a material containing cyclic olefin resin.

Abstract: Disclosed is a semiconductor device having a wafer level package structure which is characterized by containing a resin layer composed of a resin composition which is curable at 250° C. or less. Such a semiconductor device having a wafer level package structure is excellent in low stress properties, solvent resistance, low water absorbency, electrical insulation properties, adhesiveness and the like.

Abstract: Disclosed is a semiconductor wafer which is characterized in that a resin layer composed of a resin composition containing a cyclic olefin resin (A) having an epoxy group and a photoacid generator (B) is arranged on a surface on which a circuit element is formed, and the residual stress of the resin layer after curing is 1-20 MPa. Also disclosed is a semiconductor device comprising such a semiconductor wafer.

Abstract: This invention can provide a semiconductor device exhibiting excellent anti-solder reflow resistance and higher reliability in surface mounting using a lead-free solder. In accordance with the present invention, there is provided a semiconductor device formed by placing a semiconductor chip whose surface is coated with a cured resin composition for buffer coating on a pad in a lead frame via a cured resin composition for die bonding and encapsulating the semiconductor chip on the pad in the lead frame by a cured resin composition for encapsulating, wherein the cured resin composition for buffer coating has an elastic modulus of 0.5 GPa to 2.0 GPa both inclusive at 25° C.; the cured resin composition for die bonding has an elastic modulus of 1 MPa to 120 MPa both inclusive at 260° C.; and the cured resin composition for encapsulating has an elastic modulus of 400 MPa to 1200 MPa both inclusive at 260° C. and a thermal expansion coefficient of 20 ppm to 50 ppm both inclusive at 260° C.

Abstract: Vinyl addition polymer compositions, methods for forming such compositions, methods for using such compositions to form microelectronic and optoelectronic devices are provided. The vinyl addition polymer encompassed by such compositions has a polymer backbone having two or more distinct types of repeat units derived from norbornene-type monomers independently selected from monomers of Formula I: wherein each of X, m, R1, R2, R3, and R4 is as defined herein and wherein a first type of repeat unit is derived from a glycidyl ether substituted norbornene monomer and a second type of repeat unit is derived from an aralkyl substituted norbornene monomer.