Abstract: There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

Abstract: In a method of controlling a threshold of a transistor, a gate insulating film is formed in a channel region of a metal-oxide-semiconductor (MOS) transistor on a main surface of a semiconductor substrate. A first electrode layer is formed on the gate insulating film and a second electrode layer containing a work function adjusting metal is formed on the first electrode layer. Thereafter, an oxidation treatment or nitridation treatment using a microwave plasma processing apparatus is performed to inactivate the work function adjusting metal, thereby executing a threshold control of the MOS transistor.

Abstract: A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20° C. to 145° C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/m2 to 3.5 kW/m2 with respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.

Abstract: There is provided a tungsten film forming method for forming a tungsten film on a target substrate disposed inside a chamber kept under a depressurized atmosphere and having a base film formed on a surface thereof, using a tungsten chloride gas as a tungsten raw material gas and a reducing gas for reducing the tungsten chloride gas, which includes: performing an SiH4 gas treatment with respect to the target substrate having the base film formed thereon by supplying an SiH4 gas into the chamber; and subsequently, forming the tungsten film by sequentially supplying the tungsten chloride gas and the reducing gas into the chamber while purging an interior of the chamber in the course of sequentially supplying the tungsten chloride gas and the reducing gas.

Abstract: In a method of controlling a threshold of a transistor, a gate insulating film is formed in a channel region of a metal-oxide-semiconductor (MOS) transistor on a main surface of a semiconductor substrate. A first electrode layer is formed on the gate insulating film and a second electrode layer containing a work function adjusting metal is formed on the first electrode layer. Thereafter, an oxidation treatment or nitridation treatment using a microwave plasma processing apparatus is performed to inactivate the work function adjusting metal, thereby executing a threshold control of the MOS transistor.

Abstract: A method for manufacturing an insulating film laminated structure includes a step of forming a first high-k film on a semiconductor substrate, a step of processing the semiconductor substrate in a processing chamber of a plasma processing apparatus by using a plasma to form an oxide film on an interface between the semiconductor substrate and the first high-k film, and a step of forming a second high-k film on the first high-k film. A plasma oxidation process is performed by using a plasma of an oxygen-containing gas at a processing temperature of the semiconductor substrate in a range from 20° C. to 145° C. while setting a power density of a total power of microwaves to be within a range from 0.035 kW/m2 to 3.5 kW/m2 with respect to a total area of a conductive member facing an inner space of the processing chamber and microwave transmitting windows.

Abstract: To produce a silicon dioxide film having concentration of hydrogen atoms below or equal to 9.9×1020 atoms/cm3 in the silicon dioxide film, as measured by using secondary ion mass spectrometry (SIMS), a plasma CVD, which generate plasma by introducing microwaves into a process chamber by using a planar antenna having a plurality of apertures and forms a film, is performed by setting the pressure inside the process chamber within a range from 0.1 Pa to 6.7 Pa and by using a gas of a compound composed of silicon atoms and chlorine atoms and an oxygen containing gas.

Abstract: Provided is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV.

Abstract: To form a dense high-quality silicon oxide film (SiO2 film or SiON film) having excellent insulating properties and an etching rate below or equal to 0.11 nm/s when using a 0.5% dilute hydrofluoric acid solution, plasma CVD is performed by setting a pressure within the processing container in the range from 0.1 Pa to 6.7 Pa. and using a process gas containing an SiCl4 gas or an Si2H6 gas, and an oxygen gas, in a plasma CVD apparatus in which plasma is generated by introducing microwaves into a processing container through a planar antenna having a plurality of holes.

Abstract: Provided is a process of forming a silicon oxynitride film having concentration of hydrogen atoms below or equal to 9.9×1020 atoms/cm3 as measured by using secondary ion mass spectrometry (SIMS), using a plasma CVD device, which generates plasma by introducing microwaves into a process chamber by using a planar antenna having a plurality of apertures, by setting a pressure inside the process chamber within a range from 0.1 Pa to 6.7 Pa, and performing plasma CVD by using process gases including SiCl4 gas, nitrogen gas, and oxygen gas.

Abstract: Disclosed is a plasma CVD device. In the plasma CVD device, in producing a silicon nitride film while controlling the size of a band gap by CVD, microwaves are introduced into a treatment vessel by a flat antenna having a plurality of holes. The plasma CVD is carried out under a given treatment pressure selected from a pressure range of not less than 0.1 Pa and not more than 1333 Pa at a flow ratio between a silicon-containing compound gas and a nitrogen gas (silicon-containing compound gas flow rate/nitrogen gas flow rate) selected from a range of not less than 0.005 and not more than 0.2, whereby the Si/N ratio in the film is controlled to form a silicon nitride film having a band gap size of not less than 2.5 eV and not more than 7 eV.