Patents by Inventor Junya Nakahira

Junya Nakahira has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • In-situ cleaning of plasma treatment chamber
    Patent number: 5620526
    Abstract: A cleaning of a plasma chamber is done by a NF.sub.3 plasma treatment (typically under 1 to 1.5 Torr). The etching rate of an oxide layer can be improved by inserting, between the NF.sub.3 plasma treatments, a low pressure (lower than 10.sup.-1 Torr) plasma treatment preferably in a plasma of oxygen, water vapor, silane, fluorine, a hydrate compound, nitrogen trifluoride, or a mixture of nitrogen trifluoride with at least one of hydrogen fluoride, fluorine, water vapor and hydride compounds.
    Type: Grant
    Filed: July 22, 1994
    Date of Patent: April 15, 1997
    Assignees: Fujitsu Limited, Fujitsu VLSI Limited
    Inventors: Hirofumi Watatani, Masahiko Doki, Shoji Okuda, Junya Nakahira, Hideaki Kikuchi
  • Method of depositing insulating layer on underlying layer using plasma-assisted CVD process using pulse-modulated plasma
    Patent number: 5231057
    Abstract: A method for producing a semiconductor device includes the steps of forming a patterned wiring line on a first insulating layer, and depositing a second insulating layer on the patterned wiring line and the first insulating layer by a plasma-assisted CVD process in which a pulse-modulated plasma is generated and a gas containing hydrogen is used.
    Type: Grant
    Filed: August 20, 1991
    Date of Patent: July 27, 1993
    Assignee: Fujitsu Limited
    Inventors: Masahiko Doki, Junya Nakahira, Yuji Furumura