Abstract: A takeout jig (1) includes: a support part (20) which is configured to be pulled up to take out a silicon rod (10) and which is configured to support the silicon rod (10) by clamping one or more end portions (15) of the silicon rod (10); one or more first cords (30) which are equal in number to or greater in number than the silicon rod (10) and which are configured to pull up the support part (20); and one or more second cords (40) which are configured to hold the silicon rod (10) by wrapping around the silicon rod (10).

Abstract: In order to improve a purity of an entire polycrystalline silicon rod, a polycrystalline silicon rod (1) is configured such that: an outer-side total concentration (C1) is 100 pptw or less; and a ratio of an outer-side total concentration (C1) to an inner-side total concentration (C2) is 1.0 or more and 2.5 or less.

Abstract: A significant reduction in the burden on an evacuation operator and a significant reduction in evacuation cost are achieved when the concentration of impurities included in silicon are measured in liquid helium by a photoluminescence method. A glass which serves as a material for forming an inner cylinder Dewar flask (2) has an SiO2 content of 65% by weight to 75% by weight, and has an average thermal expansion rate of 25×10?7/° C. to 55×10?7/° C. when the temperature of the glass is 20° C. to 300° C.

Abstract: A semiconductor device includes: a plurality of semiconductor chips spaced apart from one another; and a conductive part. The plurality of semiconductor chips include respective semiconductor switching elements. The conductive part connects the plurality of semiconductor chips in parallel. A material of the semiconductor switching elements of the plurality of semiconductor chips includes a wide bandgap semiconductor. At least one of the semiconductor switching elements has a channel length of 1.5 ?m or less.

Abstract: A device is provided which is capable of evenly etching the entire surface of a silicon core wire. An etching device (1) for a silicon core wire (C1, C2, C3) includes: an etching bath (11, 12) for holding an etching solution (L1, L2); and a plurality of core wire support members (31) for supporting the silicon core wire (C1, C2, C3), the plurality of core wire support members (31) each having a hole (31A) through which the silicon core wire (C1, C2, C3) is to pass; and a position change mechanism (40) for changing a relative position where the silicon core wire (C1, C2, C3) passes through in relation to the hole (31A).

Abstract: It is possible to carry out an operation to open a reactor while checking a falling over status of a silicon rod. A protective structure (200) includes: a first frame body (201) that is shaped so as to surround a bottom plate (101) of a reactor (100) in which a silicon rod (110) is contained; and a protective wall surface (204) that extends vertically upward from the first frame body (201) and that forms an storage space (210) for the silicon rod (110). The protective wall surface (204) has a mesh structure.

Abstract: A dehydration method in accordance with an embodiment of the present invention includes: a first dehydration step of bringing hydrogen chloride gas (21) and concentrated sulfuric acid (13A) into contact with each other; and a second dehydration step of bringing hydrogen chloride gas (21A) that has been obtained through the first dehydration step into contact with concentrated sulfuric acid (13B). A concentration of the concentrated sulfuric acid used in the second dehydration step is higher than a concentration of the concentrated sulfuric acid used in the first dehydration step.

Abstract: A silicon core wire for depositing polycrystalline silicon is formed in a gate shape and includes a pair of vertical rod portions and a horizontal portion laterally connecting upper ends of the vertical rod portions, in which ends of the vertical rod portions and the horizontal portion are joined by welding, and a corner junction has a surface metallic concentration of 1 ppbw or less, more specifically, with an iron concentration of 0.2 ppbw or less, a chromium concentration of 0.1 ppbw or less, a nickel concentration of 0.05 ppbw or less, and a titanium concentration of 0.2 ppbw or less.

Abstract: Erosion, caused by deposition of aluminum chloride, of the inner surface of a side wall of a pipe is reduced. A trichlorosilane production method includes a distillation step (S3) in which a discharge liquid (10) discharged from a distillation column (4) is caused to flow through an inner space (19) of a second pipe (100) having a side wall (12) of which the inner surface (15) is covered with a ceramic layer (13), so that the discharge liquid (10) is recovered from the distillation column (4).

Abstract: The present invention reduces a variation in thickness of polycrystalline silicon rods to be formed. A method for producing a polycrystalline silicon rod (13), the method involving growing polycrystalline silicon by passing electric currents through silicon core wires (7) in a bell jar (5) in which the silicon core wires (7) are arranged on a plurality of concentric circles, is configured such that values of the electric currents to be passed through the silicon core wires are controlled so that an electric current to be passed through a silicon core wire (7) arranged on a first concentric circle of the plurality of concentric circles has a greater value than an electric current to be passed through a silicon core wire (7) arranged on a second concentric circle of the plurality of concentric circles, the second concentric circle being located inward of the first concentric circle.

Abstract: Provided is a method for preventing metal contamination during cutting of a polycrystalline silicon rod. A method for cutting a polycrystalline silicon rod (S) includes the step of cutting the polycrystalline silicon rod (S) by using a cutting tool (133). The step of cutting includes: delivering a liquid (L1) to a cutting position of the polycrystalline silicon rod (S) through a first nozzle (14); and delivering a liquid (L2) to a surface of the polycrystalline silicon rod (S) through a second nozzle (15).

Abstract: A takeout jig (1) includes: a support part (20) which is configured to be pulled up to take out a silicon rod (10) and which is configured to support the silicon rod (10) by clamping one or more end portions (15) of the silicon rod (10); one or more first cords (30) which are equal in number to or greater in number than the silicon rod (10) and which are configured to pull up the support part (20); and one or more second cords (40) which are configured to hold the silicon rod (10) by wrapping around the silicon rod (10).

Abstract: A semiconductor module includes: a first terminal portion and a second terminal portion each connected to outside; and a first current path and a second current path to connect between the first terminal portion and the second terminal portion in parallel. The first current path includes: a first semiconductor device; a first wiring portion and a second wiring portion. The second current path includes: a second semiconductor device; a third wiring portion; and a fourth wiring portion. A power conducting capability of the first semiconductor device is lower than a power conducting capability of the second semiconductor device, and a total of an impedance of the first wiring portion and an impedance of the second wiring portion is lower than a total of an impedance of the third wiring portion and an impedance of the fourth wiring portion.

Abstract: A method for producing purified chlorosilanes includes bringing crude chlorosilanes, such as crude trichlorosilane and crude silicon tetrachloride, which contain a boron compound and/or a phosphorus compound, into contact with chlorine (preferably 1 ppm mole to 3000 ppm mole with respect to 1 mole of crude chlorosilanes) in presence of alkylphenol such as 2-methylphenol, and then distilling the crude chlorosilanes.

Abstract: A semiconductor device includes: a base plate having a heat dissipation surface and a mounting surface opposite to each other; a semiconductor chip mounted on the mounting surface of the base plate; a sealing material sealing the semiconductor chip; a first sheet adhering to the heat dissipation surface of the base plate and having plural openings; and a second sheet covering the first sheet.

Abstract: A semiconductor device includes: a base plate having a heat dissipation surface and a mounting surface opposite to each other; a semiconductor chip mounted on the mounting surface of the base plate; a sealing material sealing the semiconductor chip; a first sheet adhering to the heat dissipation surface of the base plate and having plural openings; and a second sheet covering the first sheet.

Abstract: A boron structure body includes boron having each concentration of Ti, Al, Fe, Cr, Ni, Co, Cu, W, Ta, Mo and Nb being 0.1 ppmw or less and having a thickness of 0.8 to 5 mm. The boron structure body may have a tubular shape, and when used as a doping agent, a ratio of 11B that is an isotope may be 95 mass % or more. The boron structure body can be easily crushed, and a high-purity boron powder having an average particle diameter of 0.5 to 3 mm and having each metal impurity concentration of 0.3 ppmw or less can be obtained.

Abstract: A semiconductor module includes: a first terminal portion and a second terminal portion each connected to outside; and a first current path and a second current path to connect between the first terminal portion and the second terminal portion in parallel. The first current path includes: a first semiconductor device; a first wiring portion and a second wiring portion. The second current path includes: a second semiconductor device; a third wiring portion; and a fourth wiring portion. A power conducting capability of the first semiconductor device is lower than a power conducting capability of the second semiconductor device, and a total of an impedance of the first wiring portion and an impedance of the second wiring portion is lower than a total of an impedance of the third wiring portion and an impedance of the fourth wiring portion.

Abstract: A plurality of semiconductor devices (1) are connected in parallel with each other. A gate driver (13) supplies a gate voltage to gates of the plurality of semiconductor devices (1). A gate wire (14,16) are sequentially connected to the gates of the plurality of semiconductor devices (1) from the gate driver (13). An energizing ability of each of the semiconductor devices (1) indicates how easily collector current flows in response to the supplied gate voltage. The plurality of semiconductor devices (1) having a lower energizing ability are connected closer to the gate driver (13).

Abstract: A boron structure body includes boron having each concentration of Ti, Al, Fe, Cr, Ni, Co, Cu, W, Ta, Mo and Nb being 0.1 ppmw or less and having a thickness of 0.8 to 5 mm. The boron structure body may have a tubular shape, and when used as a doping agent, a ratio of 11B that is an isotope may be 95 mass % or more. The boron structure body can be easily crushed, and a high-purity boron powder having an average particle diameter of 0.5 to 3 mm and having each metal impurity concentration of 0.3 ppmw or less can be obtained.