Abstract: An electronic device is provided. The electronic device includes a substrate, a voltage source, and a differential amplifier. The voltage source is disposed on the substrate. The voltage source is configured to output a first bandgap reference voltage and a second bandgap reference voltage. The differential amplifier is disposed on the substrate, and electrically connected to a voltage source. The differential amplifier includes a first sub amplifier, a second sub amplifier, and a third sub amplifier. The first sub amplifier is configured to receive the first bandgap reference voltage. The second sub amplifier is configured to receive the second bandgap reference voltage. The third sub amplifier is electrically connected to the first sub amplifier and the second sub amplifier. The first bandgap reference voltage is lower than the second bandgap reference voltage.

Abstract: An electronic device is provided. The electronic device includes a power generator, a power regulator and an electronic element. The power generator is configured to provide an input voltage. The power regulator includes a voltage regulator. The voltage regulator is electrically connected to the power generator. The voltage regulator is configured to receive the input voltage to generate an output voltage. The electronic element is electrically connected to the power regulator. The electronic element is configured to receive the output voltage. The power regulator generates a control signal according to the input voltage. The power regulator provides the control signal to the electronic element. An adjustable level of the electronic element is adjusted according to the control signal.

Abstract: An electronic device is provided. The electronic device includes a power generator, a power regulator and an electronic element. The power generator is configured to provide an input voltage. The power regulator includes a voltage regulator. The voltage regulator is electrically connected to the power generator. The voltage regulator is configured to receive the input voltage to generate an output voltage. The electronic element is electrically connected to the power regulator. The electronic element is configured to receive the output voltage. The power regulator generates a control signal according to the input voltage. The power regulator provides the control signal to the electronic element. An adjustable level of the electronic element is adjusted according to the control signal.

Abstract: An electronic device is provided. The electronic device includes a power generator, a power regulator and an electronic element. The power generator is configured to provide an input voltage. The power regulator includes a voltage regulator. The voltage regulator is electrically connected to the power generator. The voltage regulator is configured to receive the input voltage to generate an output voltage. The electronic element is electrically connected to the power regulator. The electronic element is configured to receive the output voltage. The power regulator generates a control signal according to the input voltage. The power regulator provides the control signal to the electronic element. An adjustable level of the electronic element is adjusted according to the control signal.

Abstract: An electronic device includes a first sensing module and a first threshold voltage generation module. The first sensing module includes a first sensing transistor having a first gate, a second gate and a semiconductor layer. The semiconductor layer of the first sensing transistor is disposed between the first gate and the second gate of the first sensing transistor. The first gate of the first sensing transistor is coupled to a top gate line. The first threshold voltage generation module includes a node coupled to the second gate of the first sensing transistor, and is used to provide a first threshold voltage in a dark state to the node of the first threshold voltage generation module.

Abstract: An electronic device includes a first sensing module and a first threshold voltage generation module. The first sensing module includes a first sensing transistor having a first gate, a second gate and a semiconductor layer. The semiconductor layer of the first sensing transistor is disposed between the first gate and the second gate of the first sensing transistor. The first gate of the first sensing transistor is coupled to a top gate line. The first threshold voltage generation module includes a node coupled to the second gate of the first sensing transistor, and is used to provide a first threshold voltage in a dark state to the node of the first threshold voltage generation module.

Abstract: An electronic device includes a plurality of double gate thin film transistors (DGTFT). The plurality of DGTFTs includes a first DGTFT, the first DGTFT includes a substrate, a first transparent conductive layer disposed above the substrate, and a first metal layer. The first metal layer is disposed corresponding to the first transparent conductive layer. The first metal layer is electrically connected to the first transparent conductive layer.

Abstract: An electronic device includes a plurality of double gate thin film transistors (DGTFT). The plurality of DGTFTs includes a first DGTFT, the first DGTFT includes a substrate, a first transparent conductive layer disposed above the substrate, and a first metal layer. The first metal layer is disposed corresponding to the first transparent conductive layer. The first metal layer is electrically connected to the first transparent conductive layer.