Abstract: A magnetic field detection sensor includes a magneto-impedance element and detects an external magnetic field from an output obtained by applying alternating current to the magneto-impedance element using a magneto-impedance effect. The magneto-impedance element includes a non-magnetic board and a magnetic film formed on a surface of the non-magnetic board, a longitudinal direction of the magnetic film is set as a detection direction of the external magnetic field, and magnetic anisotropy is provided such that a magnetization easy axis of the magnetic film is the same as the detection direction of the external magnetic field. The magnetic field detection sensor further includes a magnetic field generating portion which generates a magnetic field in a thickness direction of the magnetic film.

Abstract: Magnetic members of a high-sensitivity magnetoimpedance element and a low-sensitivity magnetoimpedance element are connected to each other in series, and the strength and direction of an external magnetic field is detected on the basis of an impedance variation of this series circuit. The output of a magnetic field detection sensor mainly reflects an impedance variation of the high-sensitivity magnetoimpedance element in a weak magnetic field range, and mainly reflects an impedance variation of the low-sensitivity magnetoimpedance element in a strong magnetic field range, whereby continuous detection is enabled in a wide range from a weak magnetic field to a strong magnetic field.

Abstract: A vehicular power supply system is provided with: a power supply control unit for supplying a power packet from a power packet mixer to power packet routers in response to a power distribution request from the power packet routers; and an allocation unit for allocating priorities to a plurality of loads. The power supply control unit restricts power supply to a load having a low priority when the demand-supply relationship of power satisfies a predetermined condition.

Abstract: A magnetic field sensor includes a magnetic detection element that includes a magnetic material causing a magnetic impedance effect and a bias coil applying a bias magnetic field to the magnetic material, a high-frequency oscillation circuit that supplies a high-frequency current to the magnetic material, an AC bias circuit that supplies an AC bias current to the bias coil, and a detection circuit that sets a reference point corresponding to an extreme impedance position in a characteristic of the magnetic detection element in the state of no application of an external magnetic field and outputs an electric signal changing in response to an impedance change amount from the reference point. The detection circuit includes an amplitude detection circuit which detects an amplitude of the electric signal at a timing of each vertex in which at least a voltage change direction of the electric signal changes.

Abstract: A magnetic field detection sensor includes a first magneto-impedance element and a second magneto-impedance element each having a magnetic material, a bias coil applying a bias magnetic field to the magnetic body of the first magneto-impedance element, a high-frequency oscillation circuit supplying high-frequency current to the magnetic bodies of the first magneto-impedance element and the second magneto-impedance element, an AC bias circuit supplying AC bias current to the bias coil, a first detection circuit generating a first detection signal based on an impedance change of the first magneto-impedance element in a state of being applied with the bias magnetic field and an external magnetic field, and a second detection circuit which generates a second detection signal based on an impedance change of the second magneto-impedance element in a state of being applied with the external magnetic field and without the bias magnetic field.

Abstract: A temperature detecting apparatus which detects a temperature of an assembled battery in which a plurality of cells are assembled, the temperature detecting apparatus includes a plurality of detecting circuits which respectively correspond to the plurality of the cells, a pair of detection lines which electrically connects the plurality of the detecting circuits in parallel, and a processing part which outputs a sine-wave detection signal to the pair of the detection lines through a voltage-dividing resistor so as to detect a temperature of each of the plurality of the cells. Each of the plurality of the detecting circuits includes a circuit in which a temperature-sensitive resistor whose electrical characteristic changes responding to a temperature, a coil and a capacitor are connected in series.

Abstract: Magnetic members of a high-sensitivity magnetoimpedance element and a low-sensitivity magnetoimpedance element are connected to each other in series, and the strength and direction of an external magnetic field is detected on the basis of an impedance variation of this series circuit. The output of a magnetic field detection sensor mainly reflects an impedance variation of the high-sensitivity magnetoimpedance element in a weak magnetic field range, and mainly reflects an impedance variation of the low-sensitivity magnetoimpedance element in a strong magnetic field range, whereby continuous detection is enabled in a wide range from a weak magnetic field to a strong magnetic field.

Abstract: A magnetic field detection sensor includes a first magneto-impedance element and a second magneto-impedance element each having a magnetic material, a bias coil applying a bias magnetic field to the magnetic body of the first magneto-impedance element, a high-frequency oscillation circuit supplying high-frequency current to the magnetic bodies of the first magneto-impedance element and the second magneto-impedance element, an AC bias circuit supplying AC bias current to the bias coil, a first detection circuit generating a first detection signal based on an impedance change of the first magneto-impedance element in a state of being applied with the bias magnetic field and an external magnetic field, and a second detection circuit which generates a second detection signal based on an impedance change of the second magneto-impedance element in a state of being applied with the external magnetic field and without the bias magnetic field.

Abstract: A magnetic field sensor includes a magnetic detection element that includes a magnetic material causing a magnetic impedance effect and a bias coil applying a bias magnetic field to the magnetic material, a high-frequency oscillation circuit that supplies a high-frequency current to the magnetic material, an AC bias circuit that supplies an AC bias current to the bias coil, and a detection circuit that sets a reference point corresponding to an extreme impedance position in a characteristic of the magnetic detection element in the state of no application of an external magnetic field and outputs an electric signal changing in response to an impedance change amount from the reference point. The detection circuit includes an amplitude detection circuit which detects an amplitude of the electric signal at a timing of each vertex in which at least a voltage change direction of the electric signal changes.

Abstract: A magnetic field detection sensor includes a magneto-impedance element configured to make use of the magneto-impedance effect, and a negative-feedback bias coil configured to apply a bias magnetic field to the magneto-impedance element. The magnetic field detection sensor is configured to detect an external magnetic field based on an output obtained by applying an alternating-current to the magneto-impedance element. The magneto-impedance element includes a non-magnetic substrate, and a magnetic thin-film that is provided on a surface of the non-magnetic substrate. The magnetic field detecting direction matches the longitudinal direction of the magneto-impedance element, and the magnetic thin-film is configured to have a magnetic anisotropy such that a direction of an axis of easy magnetization thereof matches the magnetic field detecting direction.

Abstract: A temperature detecting apparatus which detects a temperature of an assembled battery in which a plurality of cells are assembled, the temperature detecting apparatus includes a plurality of detecting circuits which respectively correspond to the plurality of the cells, a pair of detection lines which electrically connects the plurality of the detecting circuits in parallel, and a processing part which outputs a sine-wave detection signal to the pair of the detection lines through a voltage-dividing resistor so as to detect a temperature of each of the plurality of the cells. Each of the plurality of the detecting circuits includes a circuit in which a temperature-sensitive resistor whose electrical characteristic changes responding to a temperature, a coil and a capacitor are connected in series.

Abstract: A magnetic field detection sensor includes a magneto-impedance element and detects an external magnetic field from an output obtained by applying alternating current to the magneto-impedance element using a magneto-impedance effect. The magneto-impedance element includes a non-magnetic board and a magnetic film formed on a surface of the non-magnetic board, a longitudinal direction of the magnetic film is set as a detection direction of the external magnetic field, and magnetic anisotropy is provided such that a magnetization easy axis of the magnetic film is the same as the detection direction of the external magnetic field. The magnetic field detection sensor further includes a magnetic field generating portion which generates a magnetic field in a thickness direction of the magnetic film.

Abstract: A magnetic field detection sensor includes a magneto-impedance element configured to make use of the magneto-impedance effect, and a negative-feedback bias coil configured to apply a bias magnetic field to the magneto-impedance element. The magnetic field detection sensor is configured to detect an external magnetic field based on an output obtained by applying an alternating-current to the magneto-impedance element. The magneto-impedance element includes a non-magnetic substrate, and a magnetic thin-film that is provided on a surface of the non-magnetic substrate. The magnetic field detecting direction matches the longitudinal direction of the magneto-impedance element, and the magnetic thin-film is configured to have a magnetic anisotropy such that a direction of an axis of easy magnetization thereof matches the magnetic field detecting direction.