Abstract: The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.

Abstract: The present invention discloses a chemical mechanical polishing slurry, the chemical mechanical polishing slurry comprises silica abrasive particles, a corrosion inhibitor, a complexing agent, an oxidizer, and at least one kind of polyacrylic acid anionic surfactant. The polishing slurry of the present invention can decrease the removal rate of tantalum while increasing the removal rate of copper, and reduce copper dishing and dielectric erosion after polish.

Abstract: A chemical mechanical polishing slurry and an application thereof are described herein. The polishing slurry includes: (a) grinding particles, (b) aminosilane coupling agent, (c) azole compound, (d) complexing agent, (e) organic phosphoric acid, (f) oxidizing agent, and (g) water. The chemical mechanical polishing slurry can be used for polishing through-silicon vias (TSV) and IC blocking layers, and is capable of meeting the requirements with respect to polishing rates and selection ratio for various materials. The polishing slurry has a strong correcting ability for a surface of a silicon wafer device, can achieve rapid planarization, and prevent local and overall corrosion that occurs in the metal polishing process, thus improving work efficiency and reducing production cost.