Abstract: A semiconductor module includes first to fourth semiconductor elements, a plurality of wiring patterns, a first power source terminal, second power source terminals, a first intermediate point terminal and a second intermediate point terminal. The semiconductor module has a full bridge circuit in which a first switching path that includes a first current path and a second current path and a second switching path that includes a third current path and a fourth current path are formed exclusively by a switching operation. The semiconductor module includes a temperature detection element in a region surrounded by the first and the second switching path; a first capacitor between a first temperature detection path and a common portion between the first current path and the fourth current path; and a second capacitor between the first temperature detection path and a common portion between the second current path and the third current path.

Abstract: A semiconductor module includes first to fourth semiconductor elements, a plurality of wiring patterns, a first power source terminal, second power source terminals, a first intermediate point terminal and a second intermediate point terminal, and a full bridge circuit is formed in the semiconductor module. The semiconductor module further includes a temperature detection element; first and second temperature detection wiring patterns; and first and second temperature detection terminals. The temperature detection element is disposed in a region surrounded by a first switching path and a second switching path. The semiconductor module is configured to reduce noises caused by a parasitic capacitance between a second wiring pattern and a first temperature detection wiring pattern, and a parasitic capacitance between a fourth wiring pattern and a first temperature detection wiring pattern.

Abstract: A semiconductor circuit includes: a switching circuit having at least one switching element Q; a ground wiring; and a current detection circuit connected between the switching circuit and the ground wiring. A noise eliminating circuit is connected between the switching circuit and the ground wiring in a parallel relationship with respect to the current detection circuit.

Abstract: A semiconductor module includes: a semiconductor chip; a substrate on which the semiconductor chip is disposed; a lead terminal having a joining portion that is joined to the substrate by a conductive joining material; and a mold resin that seals at least the semiconductor chip, the substrate and a portion of the lead terminal. The lead terminal has a protruding portions that protrude toward a side of the substrate in the joining portion.

Abstract: Provided is a semiconductor module that can also reduce difficulty in mounting while reducing a parasitic inductance. The semiconductor module that includes: a plurality of semiconductor chips arranged inside a mold resin M; and a plurality of terminals (first power source terminal, one second power source terminal, the other second power source terminal, first intermediate point terminal, and second intermediate point terminal) each having an inner lead portion that is positioned inside the mold resin and having an outer lead portion that is positioned outside the mold resin. The outer lead portion of the first power source terminal has a distal end branched structure where a distal end of the terminal at the outer lead portion is branched in plurals.

Abstract: In a semiconductor module, first and third chips are disposed symmetrically with respect to a center line. Second and fourth chips are disposed symmetrically with respect to the center line. First and third wiring patterns are disposed symmetrically with respect to the center line. Second and fourth wiring patterns are disposed symmetrically with respect to the center line. Two intermediate points are disposed symmetrically with respect to the center line. Two second power terminals are disposed symmetrically with respect to the center line. A fifth wiring pattern and a first power terminal are disposed symmetrically with respect to the center line. The intermediate points are adjacent to each other on one side of the module. All power terminals are on the other side of the module. The first power terminal is above the fifth wiring pattern in a non-contact state and connects the first and third wiring patterns.

Abstract: An electronic device has an electronic module having an insulating substrate 60, a conductor layer 20 provided on the insulating substrate 60, an electronic element 40 provided on the conductor layer 20 and a heat dissipation layer 10 provided on the insulating substrate in an opposite side of the electronic element 40 and a cooling body 100 which abuts on the heat dissipation layer 10. The cooling body 100 has a divided part 110 being provided at a portion which abuts on the heat dissipation layer 10 and being a plurality of divided regions.

Abstract: An electronic module comprising a first electronic unit 51 which has a first insulating substrate 61 and a first electronic element 41 provided on the first insulating substrate 61 via a first conductor layer 21, a second electronic unit 52 which has a second insulating substrate 62 and a second electronic element 42 provided on the second insulating substrate 62 via a second conductor layer 22, a connecting body 29 provided between the first electronic unit 51 and the second electronic unit 52 and a coil 70 wound around the connecting body 29.

Abstract: An electronic device has an electronic module having an insulating substrate 60, a conductor layer 20 provided on the insulating substrate 60, an electronic element 40 provided on the conductor layer 20 and a heat dissipation layer 10 provided on the insulating substrate in an opposite side of the electronic element 40 and a cooling body 100 which abuts on the heat dissipation layer 10. The cooling body 100 has a divided part 110 being provided at a portion which abuts on the heat dissipation layer 10 and being a plurality of divided regions.

Abstract: An electronic module has an insulating substrate 60, a conductor layer 20 provided on the insulating substrate 60, an electronic element 40 provided on the conductor layer 20, and a heat radiation layer 10 provided on the insulating substrate 20 in an opposite side of the electronic element 40. The heat radiation layer 10 has a plurality of heat radiation layer patterns 15 divided in a plane direction.

Abstract: An electronic module comprising a first electronic unit 51 which has a first insulating substrate 61 and a first electronic element 41 provided on the first insulating substrate 61 via a first conductor layer 21, a second electronic unit 52 which has a second insulating substrate 62 and a second electronic element 42 provided on the second insulating substrate 62 via a second conductor layer 22, a connecting body 29 provided between the first electronic unit 51 and the second electronic unit 52 and a coil 70 wound around the connecting body 29.