Abstract: The present invention discloses a method for constructing a surface stress distribution cloud map based on critical refraction longitudinal wave detection. The method comprises: firstly, meshing a surface of a detected article; secondly, The mean transverse stress on different grid lines and the mean longitudinal stress on different grid lines were obtained by the critical refraction longitudinal wave detection method; next, calculating the equivalent stress of each mesh node according to the mean transverse stress on different mesh transverse lines and the mean longitudinal stress on different mesh longitudinal lines on the surface of the detected article; and finally, drawing a stress distribution cloud map of the surface of the detected article according to the equivalent stress. The present invention can obtain the stress situations at different points on the surface of the detected article.

Abstract: A prediction method, an encoder, a decoder, and a computer storage medium are provided. The prediction method applied to an encoder includes: determining a spatial block in which an encoding point is located; constructing a prediction model according to the spatial block; acquiring a value of a first colour component and a value of a second colour component of the encoding point; obtaining a prediction value of the second colour component of the encoding point by using the prediction model and the value of the first colour component; calculating a difference between the value of the second colour component and the prediction value of the second colour component, and using the obtained difference as a residual of the encoding point; and performing Level of Detail (LOD) partitioning and lifting transform based on the residual of the encoding point.

Abstract: A self-filtering, space-time coding, waveguide-driven metasurface antenna includes at least first and second metal layers, and first dielectric layer between the first and second metal layers. A series of vias is formed in the first dielectric layer. A substrate integrated waveguide (SIW) is formed from the first and second metal layers and from the metal vias in the first dielectric layer. A series of meta-atoms is formed in the first metal layer, each meta-atom including a slot cooperating with two switching elements for switching the meta-atom between an on and off state. Each meta-atom behaves as a magnetic dipole antenna element that radiates electromagnetic waves into free space. In this manner, the propagating guided waves inside the substrate integrated waveguide are converted and molded into arbitrary selected out-of-plane free-space waves in both a frequency domain and a momentum domain.

Abstract: A self-filtering, space-time coding, waveguide-driven metasurface antenna includes at least first and second metal layers, and first dielectric layer between the first and second metal layers. A series of vias is formed in the first dielectric layer. A substrate integrated waveguide (SIW) is formed from the first and second metal layers and from the metal vias in the first dielectric layer. A series of meta-atoms is formed in the first metal layer, each meta-atom including a slot cooperating with two switching elements for switching the meta-atom between an on and off state. Each meta-atom behaves as a magnetic dipole antenna element that radiates electromagnetic waves into free space. In this manner, the propagating guided waves inside the substrate integrated waveguide are converted and molded into arbitrary selected out-of-plane free-space waves in both a frequency domain and a momentum domain.

Abstract: A method of processing a substrate includes forming a first layer having a photosensitive response to incident radiation on the substrate, forming a first pattern in the first layer, and exposing the first pattern to ultra-violet radiation. The exposure of the first pattern to ultra-violet radiation increases the resistance of the first pattern to a developer. The method also includes forming a conformal protective layer over the first pattern and at least a portion of the substrate. The method further includes forming a second layer having a photosensitive response to incident radiation over the conformal protective layer and forming a second pattern in the second layer.

Abstract: Resist compositions containing silicon, boron, or both silicon and boron may be used with ultra-violet lithography processes and extreme ultra-violet (EUV) lithography processes to increase the reactive ion etch resistance of the resist compositions, improve transmission of the resist materials, and to dope substrates.

Abstract: Resist compositions containing silicon, boron, or both silicon and boron may be used with ultra-violet lithography processes and extreme ultra-violet (EUV) lithography processes to increase the reactive ion etch resistance of the resist compositions, improve transmission of the resist materials, and to dope substrates.