Patents by Inventor Junyan Dai

Junyan Dai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12451620
    Abstract: A metasurface structure for an antenna. The metasurface structure includes multiple subwavelength units operable to manipulate or control amplitude, phase, polarization, frequency, and momentum of electromagnetic waves for radiation. The metasurface structure may be operably coupled with a waveguide to provide a metasurface antenna. The metasurface structure or the metasurface antenna may be operably coupled with a controller arranged to control it.
    Type: Grant
    Filed: August 15, 2023
    Date of Patent: October 21, 2025
    Assignee: City University of Hong Kong
    Inventors: Gengbo Wu, Junyan Dai, Kam Man Shum, Ka Fai Chan, Chi Hou Chan
  • Publication number: 20240258717
    Abstract: A metasurface structure for an antenna. The metasurface structure includes multiple subwavelength units operable to manipulate or control amplitude, phase, polarization, frequency, and momentum of electromagnetic waves for radiation. The metasurface structure may be operably coupled with a waveguide to provide a metasurface antenna. The metasurface structure or the metasurface antenna may be operably coupled with a controller arranged to control it.
    Type: Application
    Filed: August 15, 2023
    Publication date: August 1, 2024
    Inventors: Gengbo WU, Junyan DAI, Kam Man SHUM, Ka Fai CHAN, Chi Hou CHAN
  • Patent number: 11909112
    Abstract: A self-filtering, space-time coding, waveguide-driven metasurface antenna includes at least first and second metal layers, and first dielectric layer between the first and second metal layers. A series of vias is formed in the first dielectric layer. A substrate integrated waveguide (SIW) is formed from the first and second metal layers and from the metal vias in the first dielectric layer. A series of meta-atoms is formed in the first metal layer, each meta-atom including a slot cooperating with two switching elements for switching the meta-atom between an on and off state. Each meta-atom behaves as a magnetic dipole antenna element that radiates electromagnetic waves into free space. In this manner, the propagating guided waves inside the substrate integrated waveguide are converted and molded into arbitrary selected out-of-plane free-space waves in both a frequency domain and a momentum domain.
    Type: Grant
    Filed: June 24, 2022
    Date of Patent: February 20, 2024
    Assignee: City University of Hong Kong
    Inventors: Gengbo Wu, Junyan Dai, Chi Hou Chan
  • Publication number: 20230420861
    Abstract: A self-filtering, space-time coding, waveguide-driven metasurface antenna includes at least first and second metal layers, and first dielectric layer between the first and second metal layers. A series of vias is formed in the first dielectric layer. A substrate integrated waveguide (SIW) is formed from the first and second metal layers and from the metal vias in the first dielectric layer. A series of meta-atoms is formed in the first metal layer, each meta-atom including a slot cooperating with two switching elements for switching the meta-atom between an on and off state. Each meta-atom behaves as a magnetic dipole antenna element that radiates electromagnetic waves into free space. In this manner, the propagating guided waves inside the substrate integrated waveguide are converted and molded into arbitrary selected out-of-plane free-space waves in both a frequency domain and a momentum domain.
    Type: Application
    Filed: June 24, 2022
    Publication date: December 28, 2023
    Inventors: Gengbo WU, Junyan DAI, Chi Hou CHAN
  • Publication number: 20090253078
    Abstract: A method of processing a substrate includes forming a first layer having a photosensitive response to incident radiation on the substrate, forming a first pattern in the first layer, and exposing the first pattern to ultra-violet radiation. The exposure of the first pattern to ultra-violet radiation increases the resistance of the first pattern to a developer. The method also includes forming a conformal protective layer over the first pattern and at least a portion of the substrate. The method further includes forming a second layer having a photosensitive response to incident radiation over the conformal protective layer and forming a second pattern in the second layer.
    Type: Application
    Filed: March 31, 2009
    Publication date: October 8, 2009
    Applicant: Sokudo Co., Ltd.
    Inventors: Nikolaos Bekiaris, Junyan Dai, Hiram Cervera, Hali Janine Lana Forstner
  • Patent number: 7326514
    Abstract: Resist compositions containing silicon, boron, or both silicon and boron may be used with ultra-violet lithography processes and extreme ultra-violet (EUV) lithography processes to increase the reactive ion etch resistance of the resist compositions, improve transmission of the resist materials, and to dope substrates.
    Type: Grant
    Filed: March 12, 2004
    Date of Patent: February 5, 2008
    Assignees: Cornell Research Foundation, Inc., University of Wisconsin-Madison
    Inventors: Junyan Dai, Christopher K. Ober, Lin Wang, Franco Cerrina, Paul Nealey
  • Publication number: 20040241574
    Abstract: Resist compositions containing silicon, boron, or both silicon and boron may be used with ultra-violet lithography processes and extreme ultra-violet (EUV) lithography processes to increase the reactive ion etch resistance of the resist compositions, improve transmission of the resist materials, and to dope substrates.
    Type: Application
    Filed: March 12, 2004
    Publication date: December 2, 2004
    Inventors: Junyan Dai, Christopher K. Ober, Lin Wang, Franco Cerrina, Paul Nealey