Patents by Inventor Jun-Yeob KIM

Jun-Yeob KIM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Driver circuit for controlling P-channel MOSFET, and control device comprising same
    Patent number: 11171642
    Abstract: A driver circuit for controlling a P-channel MOSFET includes a first voltage divider connected to a source terminal of the P-channel MOSFET, a first sub-transistor including a first collector terminal, a first emitter terminal and a first base terminal, the first collector terminal is connected to the first voltage divider, a second sub-transistor including a second collector terminal, a second emitter terminal and a second base terminal, the second emitter terminal is connected to a gate terminal of the P-channel MOSFET, and the second base terminal is connected to a first connection node, a third sub-transistor including a third collector terminal, a third emitter terminal and a third base terminal, the third emitter terminal is connected to the second emitter terminal, and the third collector terminal is connected to a ground, and a first resistor connected between the second collector terminal and the second emitter terminal.
    Type: Grant
    Filed: October 28, 2019
    Date of Patent: November 9, 2021
    Assignee: LG CHEM, LTD.
    Inventor: Jun-Yeob Kim
  • DRIVER CIRCUIT FOR CONTROLLING P-CHANNEL MOSFET, AND CONTROL DEVICE COMPRISING SAME
    Publication number: 20210258006
    Abstract: A driver circuit for controlling a P-channel MOSFET includes a first voltage divider connected to a source terminal of the P-channel MOSFET, a first sub-transistor including a first collector terminal, a first emitter terminal and a first base terminal, the first collector terminal is connected to the first voltage divider, a second sub-transistor including a second collector terminal, a second emitter terminal and a second base terminal, the second emitter terminal is connected to a gate terminal of the P-channel MOSFET, and the second base terminal is connected to a first connection node, a third sub-transistor including a third collector terminal, a third emitter terminal and a third base terminal, the third emitter terminal is connected to the second emitter terminal, and the third collector terminal is connected to a ground, and a first resistor connected between the second collector terminal and the second emitter terminal.
    Type: Application
    Filed: October 28, 2019
    Publication date: August 19, 2021
    Applicant: LG CHEM, LTD.
    Inventor: Jun-Yeob KIM