Patents by Inventor Junyeong HAN

Junyeong HAN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12292827
    Abstract: A storage device, including a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, fixedly and sequentially manage logical addresses of data written in the plurality of zones, generate a first page map table corresponding to a first zone based on performing the write operation on the first zone, the first page map table comprising a logical address and a physical address of the first zone, based on the first zone being full, activate a read service, which is based on the zone map table, and based on the read service being activated, process read requests for the first zone from the external host device using the zone map table.
    Type: Grant
    Filed: August 25, 2023
    Date of Patent: May 6, 2025
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seunghyun Choi, Keunsan Park, Heetak Shin, Junyeong Han, Gyeongmin Kim, Joon-Whan Bae, Jooyoung Hwang
  • Publication number: 20240069782
    Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to, based on receiving an open zone command from an external host device: based on a number of free erase units from among a plurality of erase units included in the plurality of memory cells being greater than a threshold value, allocate at least two free erase units to a first-type zone, and based on the number of the free erase units being smaller than or equal to the threshold value, allocate the at least two free erase units to a second-type zone. wherein the controller is further configured to permit a random write based on a random logical address received from the external host device for the first-type zone, and to permit a zone write based on a sequential logical address received from the external host device for the second-type zone.
    Type: Application
    Filed: August 24, 2023
    Publication date: February 29, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Joon-Whan BAE, Junyeong HAN, Kui-Yon MUN, Heetak SHIN
  • Publication number: 20240070067
    Abstract: A storage device, including: a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, select two or more erase units from among a plurality of erase units included in the plurality of memory cells to be allocated to each zone of the plurality of zones, fixedly and sequentially manage logical addresses of data to be written in the plurality of zones, and generate at least two map tables for the each zone
    Type: Application
    Filed: August 25, 2023
    Publication date: February 29, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seunghyun CHOI, Keunsan PARK, Joon-Whan BAE, Jooyoung HWANG, Gyeongmin KIM, Heetak SHIN, Junyeong HAN
  • Publication number: 20240069750
    Abstract: A storage device, including: a nonvolatile memory device including a plurality of memory cells; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller is further configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device in response to a request of an external host device, select two or more erase units among a plurality of erase units of the plurality of memory cells to be allocated to each of the plurality of zones based on a zone map table, fixedly and sequentially manage logical addresses of data written in the plurality of zones, wherein the controller includes an internal buffer configured to store first data to be written in a first zone from among the plurality of zones, and wherein the controller is further configured to perform a backup operation for the first data b
    Type: Application
    Filed: August 30, 2023
    Publication date: February 29, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kui-Yon MUN, Junyeong HAN, Jooyoung HWANG, Gyeongmin KIM, Keunsan PARK, Joon-Whan BAE, Heetak SHIN, Seunghyun CHOI
  • Publication number: 20240070033
    Abstract: A storage device, including a nonvolatile memory device including a plurality of memory cells forming a user area and a reserved area; and a controller configured to perform a write operation on at least one write unit included in the plurality of memory cells, and to perform an erase operation on at least one erase unit included in the plurality of memory cells, wherein the controller includes an internal buffer, wherein the controller is configured to: perform a backup operation by writing first data stored in the internal buffer in a backup erase unit included in the reserved area, and after performing the backup operation adjust a buffering unit of the internal buffer to correspond to a cell type of the backup erase unit.
    Type: Application
    Filed: August 25, 2023
    Publication date: February 29, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Junyeong HAN, Kui-Yon Mun, Jooyoung Hwang, Keunsan Park, Gyeongmin Kim, Heetak Shin, Seunghyun Choi
  • Publication number: 20240070066
    Abstract: A storage device, including a nonvolatile memory device comprising a plurality of memory cells; and a controller configured to: allocate a plurality of zones to a storage space of the nonvolatile memory device based on a request received from an external host device, fixedly and sequentially manage logical addresses of data written in the plurality of zones, generate a first page map table corresponding to a first zone based on performing the write operation on the first zone, the first page map table comprising a logical address and a physical address of the first zone, based on the first zone being full, activate a read service, which is based on the zone map table, and based on the read service being activated, process read requests for the first zone from the external host device using the zone map table.
    Type: Application
    Filed: August 25, 2023
    Publication date: February 29, 2024
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seunghyun CHOI, Keunsan PARK, Heetak SHIN, Junyeong HAN, Gyeongmin KIM, Joon-Whan BAE, Jooyoung HWANG