Patents by Inventor Junyong JIN

Junyong JIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Light-emitting diode with multiple N contact structure
    Patent number: 10177279
    Abstract: Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.
    Type: Grant
    Filed: May 30, 2017
    Date of Patent: January 8, 2019
    Assignee: Korea University Research and Business Foundation
    Inventors: Tae Yeon Seong, Ki Seok Kim, Junyong Jin
  • LIGHT-EMITTING DIODE WITH MULTIPLE N CONTACT STRUCTURE
    Publication number: 20170352784
    Abstract: Provided are a horizontal light emitting diode (LED) device and a method for fabricating the same. The horizontal LED device includes a sapphire substrate; an n-type GaN layer disposed on the sapphire substrate; an activation layer disposed on the n-type GaN layer; a p-type GaN layer disposed on the activation layer; a current spreading layer disposed on the p-type GaN layer; a p-electrode disposed on the current spreading layer; a plurality of holes exposing the n-type GaN layer through the current spreading layer, the p-type GaN layer, and activation layer; and an n-electrode disposed on the exposed n-type GaN layer and being in ohmic contact with the exposed n-type GaN layer at a plurality of positions on bottom surfaces of the plurality of holes.
    Type: Application
    Filed: May 30, 2017
    Publication date: December 7, 2017
    Applicant: Korea University Research and Business Foundation
    Inventors: Tae Yeon SEONG, Ki Seok KIM, Junyong JIN