Patents by Inventor Jun-Youn Kim

Jun-Youn Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240417893
    Abstract: Provided is a biodegradable yarn, comprising: a first biodegradable resin composition comprising a first biodegradable resin, wherein the first biodegradable resin includes diol, aromatic dicarboxylic acid and aliphatic dicarboxylic acid, and the first biodegradable resin composition has a melt index of 6 g/10 minutes to 15 g/10 minutes at 190° C. and a crystallization temperature of 40° C. to 85° C.
    Type: Application
    Filed: June 13, 2024
    Publication date: December 19, 2024
    Inventors: Seong Dong KIM, Kyung Youn KIM, Hoon KIM, Kyoung Hwan YOU, Jun Su BYEON, Hyeri LEE
  • Publication number: 20240336170
    Abstract: A walk-in apparatus for a vehicle seat includes a walk-in bracket rotatably coupled to a crossbar of a cushion frame and operable to release a fixing member by contacting the fixing member of a seat rail; a compensator bracket operably connected to the walk-in bracket through a hinge, the compensator bracket also being connected to a walk-in cable; and a compensator spring configured to support the walk-in bracket and the compensator bracket, rotate at least one of the walk-in bracket and the compensator bracket, and operate in such a manner as to return the compensator bracket. Even when the walk-in cable is released due to a seatback rebound phenomenon during a walk-in operation, the walk-in bracket maintains a pressing state of the fixing member to maintain continuously an unlocking state of the seat rail, allowing the vehicle seat to move forward smoothly to enable a walk-in operation.
    Type: Application
    Filed: September 25, 2023
    Publication date: October 10, 2024
    Applicants: Hyundai Motor Company, Kia Corporation, Hyundai Transys Inc., DAS CO., LTD
    Inventors: Mu Young Kim, Jun Hwan Lee, Jun Young Heo, Ho Suk Jung, Hyeok Seung Lee, Keun Gwack, Sang Do Park, Chan Ho Jung, Jae Hun Jeong, Sang Soo Lee, Sai Youn Jung, Seon Ho Park, Jun Hyuk Park, Jae Yong Jang, Jun Sik Hwang, Joong Geol Gug, Woo Ryang Kim, Jai Wha Choi, Gil Hwan Ryu, So Yun Kim
  • Publication number: 20240337412
    Abstract: In an air conditioner, a drain extraction unit and a refrigerant pipe connecting unit may be disposed in a blocking region in which a discharge port is not provided so that a size of the discharge port may be secured and the discharge port may be uniformly disposed, thereby generating uniform airflow in a room. In a lower housing formed in a circular shape, some of components inside an indoor unit of the air conditioner may be disposed in a protrusion portion that protrudes from the circular housing, thereby facilitating the installation of the air conditioner. A condensate water collecting space disposed outside the housing may be provided in a drain tray, thereby efficiently preventing a leakage due to condensate water generated outside the housing. The housing, the drain tray, and the cover member of the air conditioner may be coupled by a coupling member coupled outside.
    Type: Application
    Filed: June 18, 2024
    Publication date: October 10, 2024
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong Yoon LEE, Do-Hoon KIM, Joon-Ho YOON, Chul Ju LEE, Jun Woo KIM, Bu Youn LEE, Jung Dae LEE, Sung-June CHO
  • Patent number: 12107204
    Abstract: A micro-LED device and a method of fabricating the micro-LED device are disclosed. The method includes processing from a first side (e.g., p-side) of epitaxial layers of a micro-LED wafer to form individual mesa structures and a first solid metal bonding layer on the mesa structures, bonding a second solid metal bonding layer on a backplane wafer to the first solid metal bonding layer of the micro-LED wafer, removing the substrate of the micro-LED wafer and processing from a second side (e.g., n-side) of the epitaxial layers to isolate the solid metal bonding layers and form individual electrodes (e.g., anodes) for individual micro-LEDs, forming a dielectric material layer on surfaces in regions between the mesa structures, and depositing one or more metal materials in the regions between the mesa structures to form mesa sidewall reflectors and a common electrode for the micro-LEDs.
    Type: Grant
    Filed: December 14, 2021
    Date of Patent: October 1, 2024
    Assignee: META PLATFORMS TECHNOLOGIES, LLC
    Inventors: Jun-Youn Kim, Mohsin Aziz, Abdul Shakoor, Gary Charles Day
  • Patent number: 12098242
    Abstract: Disclosed is an eco-friendly biodegradable polyester resin composition, including: a polyester resin including a diol, an aromatic dicarboxylic acid and an aliphatic dicarboxylic acid, wherein an alternating ratio of the polyester resin is 0.3 to 0.7, wherein the alternating ratio is a ratio of a diol, bonded between the aromatic dicarboxylic acid and the aliphatic dicarboxylic acid, among the diol. The diol may include 1,4-butanediol; the aromatic dicarboxylic acid may include terephthalic acid or dimethyl terephthalate; and the aliphatic dicarboxylic acid may include adipic acid. When the biodegradable polyester resin composition is dried at 80° C., placed in a stainless steel mold, and compressed at 210° C. under a pressure of 10 MPa for 3 minutes to produce a polyester sheet having a thickness of 300 ?m, the sheet has a tensile strange range from 40 MPa to 60 MPa, an elongation at break range from 800% to 1100%, and Young's modulus range from 20 MPa to 80 MPa.
    Type: Grant
    Filed: May 19, 2023
    Date of Patent: September 24, 2024
    Assignee: ECOVANCE CO. LTD.
    Inventors: Seong Dong Kim, Kyung Youn Kim, Hoon Kim, Jun Su Byeon, Eun Sun Joeng
  • Publication number: 20240313166
    Abstract: A light emitting element, a display device including the same and a method of fabricating the same. The light emitting element may include an element rod including a first semiconductor layer, an active layer, and a second semiconductor layer. First and second contact electrodes may be respectively disposed on a first end surface and a second and opposite end surface of the element rod. A reflection layer may surround the first contact electrode and the element rod. An inner insulating layer may be disposed inside the reflection layer and surround the first contact electrode and the element rod. An outer insulating layer external to the reflection layer and may surround the first contact electrode and the element rod. A first inclination of side surfaces of the first semiconductor layer and the active layer and a second inclination of a side surface of the second semiconductor layer may be different.
    Type: Application
    Filed: March 6, 2024
    Publication date: September 19, 2024
    Applicant: Samsung Display Co., LTD.
    Inventors: Hyung Rae CHA, Jun Youn KIM, Dong Uk KIM, Myeong Hee KIM, Seul Ki KIM, Hee Keun LEE
  • Patent number: 12080750
    Abstract: A light emitting diode (LED) precursor is provided. The LED precursor comprises a substrate (10), an LED structure (30) comprising a plurality of Group III-nitride layers, and a passivation layer (40). The LED structure comprises a p-type semiconductor layer (36), an n-type semiconductor layer (32), and an active layer (34) between the p-type and n-type semiconductor layers. Each of the plurality of Group III-nitride layers comprises a crystalline Group III-nitride. The LED structure has a sidewall (37) which extends in a plane orthogonal to a (0001) crystal plane of the Group III-nitride layers. The passivation layer is provided on the sidewall of the LED structure such that the passivation layer covers the active layer. The passivation layer comprises a crystalline Group III-nitride with a bandgap higher than a bandgap of the active layer.
    Type: Grant
    Filed: May 19, 2020
    Date of Patent: September 3, 2024
    Assignee: Plessey Semiconductors Limited
    Inventors: Jun-Youn Kim, Mohsin Aziz, John Shannon, Kevin Stribley, Ian Daniels
  • Publication number: 20240279296
    Abstract: A fusion protein contains an FGF21 mutant protein and an Fc region of an immunoglobulin. The fusion protein exhibits improved pharmacological efficacy, in vivo duration and protein stability. A pharmaceutical composition containing the fusion protein as an active ingredient may be effectively used as a therapeutic agent for diabetes, obesity, dyslipidemia, metabolic syndrome, non-alcoholic fatty liver disease or non-alcoholic steatohepatitis.
    Type: Application
    Filed: October 20, 2023
    Publication date: August 22, 2024
    Applicant: YUHAN CORPORATION
    Inventors: Jun Hwan KIM, Seyoung LIM, Minji SEO, Hyun Ho CHOI, Dohoon KIM, Mi Kyeong JU, Ju-Young PARK, Byung Hyun CHOI, Jun Kyung LEE, Jong Gyun KIM, Su Youn NAM
  • Patent number: 12055314
    Abstract: In an air conditioner, a drain extraction unit and a refrigerant pipe connecting unit may be disposed in a blocking region in which a discharge port is not provided so that a size of the discharge port may be secured and the discharge port may be uniformly disposed, thereby generating uniform airflow in a room. In a lower housing formed in a circular shape, some of components inside an indoor unit of the air conditioner may be disposed in a protrusion portion that protrudes from the circular housing, thereby facilitating the installation of the air conditioner. A condensate water collecting space disposed outside the housing may be provided in a drain tray, thereby efficiently preventing a leakage due to condensate water generated outside the housing. The housing, the drain tray, and the cover member of the air conditioner may be coupled by a coupling member coupled outside.
    Type: Grant
    Filed: January 13, 2023
    Date of Patent: August 6, 2024
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Dong Yoon Lee, Do-Hoon Kim, Joon-Ho Yoon, Chul Ju Lee, Jun Woo Kim, Bu Youn Lee, Jung Dae Lee, Sung-June Cho
  • Publication number: 20240038927
    Abstract: A colour conversion resonator system, comprising: a first partially reflective region configured to transmit light of a first primary peak wavelength and to reflect light of a second primary peak wavelength; a second partially reflective region configured to at least partially transmit light of the first and second primary peak wavelengths and to reflect light of a third primary peak wavelength; a third partially reflective region configured to at least partially reflect light with the third primary peak wavelength; a first colour conversion resonator cavity arranged to receive input light with the first primary peak wavelength through the first partially reflective region and to convert at least some of the light of the first primary peak wavelength to provide light of the second primary peak wavelength, wherein the first colour conversion resonator cavity is arranged such that the second primary peak wavelength resonates in the first colour conversion resonator cavity and resonant light with the second prim
    Type: Application
    Filed: October 10, 2022
    Publication date: February 1, 2024
    Inventors: Jun-Youn Kim, Anwer Saeed, Andrea Pinos, Mohsin Aziz, Ian Murray, Abdul Shakoor
  • Publication number: 20230369549
    Abstract: A colour conversion resonator system, comprising: a partially reflective region configured to transmit light of a first primary peak wavelength and to reflect light of a second primary peak wavelength; a further partially reflective region configured to at least partially reflect light with the second primary peak wavelength; and a colour conversion resonator cavity comprising at least one quantum well, wherein the colour conversion resonator cavity is arranged to: receive input light with the first primary peak wavelength through the partially reflective region; and convert, by the at least one quantum well, at least some of the received input light to provide light of the second primary peak wavelength such that light of the second primary peak wavelength resonates in the cavity and light with the resonant second primary peak wavelength is output through the further partially reflective region, wherein the at least one quantum well is placed to coincide with an antinode of the colour conversion resonator ca
    Type: Application
    Filed: October 22, 2021
    Publication date: November 16, 2023
    Inventors: Jun-Youn Kim, Anwer Saeed, Andrea Pinos, Mohsin Aziz, Ian Murray, Abdul Shakoor
  • Publication number: 20230299119
    Abstract: According to the first aspect of the disclosure, a method of forming a light emitting device array precursor is provided. The method comprises forming a first light emitting layer on a first substrate, forming an array of first light emitting devices from the first light emitting layer, each first light emitting device configured to emit light having a first wavelength. A first bonding layer is formed on the first light emitting layer. A second light emitting layer is formed on a second substrate, the second light emitting layer configured to emit light having a second wavelength different to the first wavelength. A second bonding layer is formed on the second light emitting layer. The second bonding layer is bonded to a handling substrate, followed by removing the second substrate from the second light emitting layer. A third bonding layer is formed on the second light emitting layer on an opposite side of the second light emitting layer to the handling layer.
    Type: Application
    Filed: June 23, 2021
    Publication date: September 21, 2023
    Applicant: Plessey Semiconductors Limited
    Inventors: Mohsin AZIZ, Jun-Youn KIM, Abdul SHAKOOR, James CARSWELL, Anwer SAEED, Kevin STRIBLEY
  • Publication number: 20230238421
    Abstract: A method of manufacturing a LED precursor and a LED precursor is provided. The LED precursor is manufactured by forming a monolithic growth stack having a growth surface and forming a monolithic LED stack on the growth surface. The monolithic growth stack comprises a first semiconducting layer comprising a Group III-nitride, a second semiconducting layer, and third semi-conducting layer. The second semiconducting layer comprises a first Group III-nitride including a donor dopant such that the second semiconducting layer has a donor density of at least 5×1018 cm-3. The second semiconducting layer has an areal porosity of at least 15% and a first in-plane lattice constant. The third semiconducting layer comprises a second Group III-nitride different to the first Group-III-nitride.
    Type: Application
    Filed: March 25, 2021
    Publication date: July 27, 2023
    Applicant: PLESSEY SEMICONDUCTORS LIMITED
    Inventors: Andrea PINOS, Wei Sin TAN, Jun Youn KIM, Xiang YU, Simon ASHTON, Samir MEZOUARI
  • Publication number: 20230238479
    Abstract: A method of forming a strain relaxation layer in an epitaxial crystalline structure, the method comprising: providing a crystalline template layer comprising a material with a first natural relaxed in-plane lattice parameter; forming a first epitaxial crystalline layer on the crystalline template layer, wherein the first epitaxial crystalline layer has an initial electrical conductivity that is higher than the electrical conductivity of the crystalline template layer; forming a second epitaxial crystalline layer on the first epitaxial crystalline layer, wherein the second epitaxial crystalline layer has an electrical conductivity lower than the initial electrical conductivity of the first epitaxial crystalline layer and comprises a material with a second natural relaxed in-plane lattice parameter that is different to the first natural relaxed in-plane lattice parameter of the crystalline template layer; forming pores in the first epitaxial crystalline layer by electrochemical etching of the first epitaxial cr
    Type: Application
    Filed: July 14, 2021
    Publication date: July 27, 2023
    Inventors: Andrea Pinos, WeiSin Tan, Samir Mezouari, John Lyle Whiteman, Xiang Yu, Jun-Youn Kim
  • Publication number: 20230139307
    Abstract: A micro-light emitting diode includes a substrate including at least a first portion of an n-type semiconductor layer, and a mesa structure on the substrate and characterized by a linear lateral dimension equal to or less than about 3 ?m. The mesa structure includes a plurality of epitaxial layers, and a conductive distributed Bragg reflector (DBR) on the plurality of epitaxial layers. The conductive DBR includes a plurality of transparent conductive oxide layers and covers between about 80% and about 100% of a full lateral area of the plurality of epitaxial layers. The micro-LED also includes a dielectric layer on sidewalls of the mesa structure, a reflective metal layer on sidewalls of the dielectric layer and electrically coupled to the first portion of the n-type semiconductor layer, and a first metal electrode in direct contact with the conductive DBR.
    Type: Application
    Filed: December 27, 2022
    Publication date: May 4, 2023
    Inventors: Abdul SHAKOOR, Mohsin AZIZ, Jun-Youn KIM
  • Publication number: 20230119031
    Abstract: A light emitting diode structure comprising: a p-type region; an n-type region; a light emitting region for recombination of carriers injectable by the p-type region and the n-type region; and a via passing through the light emitting region, wherein the via defines the perimeter of a light emitting surface of at least one pixel and comprises a material configured to enable injection of carriers into the p-type region or the n-type region, wherein one of the p-type region and n-type region is configured such that carriers generated in the one of the p-type region and the n-type region diffuses through the other one of the n-type region and the p-type region prior to recombination in the light emitting region.
    Type: Application
    Filed: March 15, 2021
    Publication date: April 20, 2023
    Inventors: Andrea Pinos, Jun-Youn Kim, Samir Mezouari, WeiSin Tan
  • Patent number: 11569414
    Abstract: A micro-light emitting diode includes a substrate including at least a first portion of an n-type semiconductor layer, and a mesa structure on the substrate and characterized by a linear lateral dimension equal to or less than about 3 ?m. The mesa structure includes a plurality of epitaxial layers, and a conductive distributed Bragg reflector (DBR) on the plurality of epitaxial layers. The conductive DBR includes a plurality of transparent conductive oxide layers and covers between about 80% and about 100% of a full lateral area of the plurality of epitaxial layers. The micro-LED also includes a dielectric layer on sidewalls of the mesa structure, a reflective metal layer on sidewalls of the dielectric layer and electrically coupled to the first portion of the n-type semiconductor layer, and a first metal electrode in direct contact with the conductive DBR.
    Type: Grant
    Filed: February 17, 2021
    Date of Patent: January 31, 2023
    Assignee: Meta Platforms Technologies, LLC
    Inventors: Abdul Shakoor, Mohsin Aziz, Jun-Youn Kim
  • Patent number: 11508890
    Abstract: A display device includes a plurality of light emitting diodes (LEDs) having walls that extend through a transparent semiconductor layer and beyond the surface of the transparent semiconductor layer. Each of the walls surrounds at least part of each of the plurality of LEDs to collimate the light emitted by the plurality of LEDs. In some embodiments, the walls collimate the light emitted by the LEDs by reflecting the light or absorbing a portion of the light. The display device may further include an array of optical lenses that faces the surface of the transparent semiconductor layer to further collimate the light emitted from the LEDs.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: November 22, 2022
    Assignee: Meta Platforms Technologies, LLC
    Inventors: Mohsin Aziz, Jun-Youn Kim, Samir Mezouari, Abdul Shakoor, James Walker Carswell
  • Publication number: 20220310891
    Abstract: A display device includes a plurality of light emitting diodes (LEDs) having walls that extend through a transparent semiconductor layer and beyond the surface of the transparent semiconductor layer. Each of the walls surrounds at least part of each of the plurality of LEDs to collimate the light emitted by the plurality of LEDs. In some embodiments, the walls collimate the light emitted by the LEDs by reflecting the light or absorbing a portion of the light. The display device may further include an array of optical lenses that faces the surface of the transparent semiconductor layer to further collimate the light emitted from the LEDs.
    Type: Application
    Filed: March 26, 2021
    Publication date: September 29, 2022
    Inventors: Mohsin Aziz, Jun-Youn Kim, Samir Mezouari, Abdul Shakoor, James Walker Carswell
  • Publication number: 20220271193
    Abstract: A light emitting diode is provided having a LED layer configured to emit pump light having a pump light wavelength from a light emitting surface, the LED layer comprising a plurality of Group III-nitride layers. A container layer is provided on the light emitting surface of the LED layer, the container surface including an opening defining a container volume through the container layer to the light emitting surface of the LED layer. A colour converting layer is provided in the container volume, the colour converting Got layer configured to absorb pump light and emit converted light of a converted light wavelength longer than the pump light wavelength. A lens is provided on the container surface over the opening, the lens having a convex surface on an opposite side of the lens to the colour converting layer. A pump light reflector laminate provided over the convex surface of the lens the pump light reflector laminate having a stop-band configured to reflect the pump light centred on a first wavelength.
    Type: Application
    Filed: July 24, 2020
    Publication date: August 25, 2022
    Applicant: PLESSEY SEMICONDUCTORS LIMITED
    Inventors: Jun-Youn KIM, Samir MEZOUARI, John SHANNON, Kevin STRIBLEY, Mohsin AZIZ