Abstract: In a method of designing a mask, a first mask including an active region, a gate structure, and a gate tap partially overlapping the active region and the gate structure is designed. The first mask is changed so that a portion of the gate tap is extended. An OPC is performed on the changed first mask to design a second mask.

Abstract: A device controller included in a storage device includes a host controller connected to a host memory, a memory controller connected to a plurality of nonvolatile memory devices, a protocol controller configured to control data transfer between the host controller and the plurality of nonvolatile memory devices, and to perform data memory access to a data region of the host memory and non-data memory access to a non-data region of the host memory through the host controller, and a scheduler configured to re-order the data memory access and the non-data memory access such that the non-data memory access to the non-data region is performed after the data memory access to a data chunk has completed, the data chunk being successive data that is allocated within the data region by a physical region page (PRP).

Abstract: A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25° C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

Abstract: The present disclosure provides a wafer grinding device comprising: a chuck table to suction the wafer thereon, a grinding wheel to grind the wafer by a predetermined thickness, wherein the grinding wheel includes a grinding body, and grinding teeth arranged along and on a bottom outer periphery of the grinding body, wherein the grinding teeth are segmented; and a cooling unit at least partially extending along a region between a departure point of the grinding teeth from the wafer during rotation of the teeth, and a re-encounter point of the teeth with the wafer during rotation of the teeth, wherein the region extends along rotation path of the grinding teeth.

Abstract: In a method of designing a mask, a first mask including an active region, a gate structure, and a gate tap partially overlapping the active region and the gate structure is designed. The first mask is changed so that a portion of the gate tap is extended. An OPC is performed on the changed first mask to design a second mask.

Abstract: A device controller included in a storage device includes a host controller connected to a host memory, a memory controller connected to a plurality of nonvolatile memory devices, a protocol controller configured to control data transfer between the host controller and the plurality of nonvolatile memory devices, and to perform data memory access to a data region of the host memory and non-data memory access to a non-data region of the host memory through the host controller, and a scheduler configured to re-order the data memory access and the non-data memory access such that the non-data memory access to the non-data region is performed after the data memory access to a data chunk has completed, the data chunk being successive data that is allocated within the data region by a physical region page (PRP).

Abstract: A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.

Abstract: A wearable electronic device is provided. The wearable electronic device includes a frame, a body section connected with the frame, a display module mounted on the body section and configured to output an image, and a guide section configured to change a position of the display module in relation to the frame. The wearable electronic device may be variously implemented according to various embodiments.

Abstract: A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Abstract: A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 ?m to about 1 ?m is less than or equal to about 10/ml.

Abstract: The present disclosure provides a wafer grinding device comprising: a chuck table to suction the wafer thereon, a grinding wheel to grind the wafer by a predetermined thickness, wherein the grinding wheel includes a grinding body, and grinding teeth arranged along and on a bottom outer periphery of the grinding body, wherein the grinding teeth are segmented; and a cooling unit at least partially extending along a region between a departure point of the grinding teeth from the wafer during rotation of the teeth, and a re-encounter point of the teeth with the wafer during rotation of the teeth, wherein the region extends along rotation path of the grinding teeth.

Abstract: A composition for forming a silica based layer, the composition including a silicon-containing polymer having polydispersity ranging from about 3.0 to about 30 and a solvent, and having viscosity ranging from about 1.30 centipoise (cps) to about 1.80 cps at 25° C. Also, a silica based layer is formed of the composition, and an electronic device includes the silica based layer.

Abstract: A composition for forming a silica based layer includes a silicon-containing compound including polysilazane, polysiloxazane, or a combination thereof and one or more kinds of solvent, and having a turbidity increasing rate of less than or equal to about 0.13.

Abstract: A wearable electronic device is provided. The wearable electronic device includes a frame, a body section connected with the frame, a display module mounted on the body section and configured to output an image, and a guide section configured to change a position of the display module in relation to the frame. The wearable electronic device may be variously implemented according to various embodiments.

Abstract: A composition for forming a silica layer including a silicon-containing polymer having a weight average molecular weight of about 20,000 to about 70,000 and a polydispersity index of about 5.0 to about 17.0 and a solvent; a silica layer manufactured using the same; and an electronic device including the silica layer.

Abstract: A composition for forming a silica based layer and a method for manufacturing a silica based layer, the composition including a silicon-containing compound, the silicon-containing compound including a hydrogenated polysilazane moiety, a hydrogenated polysiloxazane moiety, or a combination thereof, and a solvent, wherein a number of particles of the silicon-containing compound in the composition and having a particle diameter of about 0.2 ?m to about 1 ?m is less than or equal to about 10/ml.

Abstract: A semiconductor device includes a plurality of cylindrical structures located at vertices and central points of a plurality of hexagons in a honeycomb pattern, and a unitary support having a plurality of openings. Each of the openings exposes a part each of four of the cylindrical structures. Each of the openings has the shape of a parallelogram or an oval substantially. A first distance between opposite cylindrical structures of a first pair of the four cylindrical structures exposed by each opening is shorter than a second distance between opposite cylindrical structures of a second pair of the four cylindrical structures exposed by the opening. The first distance is equal to a distance between the central point and each of the vertices of the hexagon.

Abstract: A semiconductor device includes a plurality of cylindrical structures located at vertices and central points of a plurality of hexagons in a honeycomb pattern, and a unitary support having a plurality of openings. Each of the openings exposes a part each of four of the cylindrical structures. Each of the openings has the shape of a parallelogram or an oval substantially. A first distance between opposite cylindrical structures of a first pair of the four cylindrical structures exposed by each opening is shorter than a second distance between opposite cylindrical structures of a second pair of the four cylindrical structures exposed by the opening. The first distance is equal to a distance between the central point and each of the vertices of the hexagon.

Abstract: Phase change memory devices can have bottom patterns on a substrate. Line-shaped or L-shaped bottom electrodes can be formed in contact with respective bottom patterns on a substrate and to have top surfaces defined by dimensions in x and y axes directions on the substrate. The dimension along the x-axis of the top surface of the bottom electrodes has less width than a resolution limit of a photolithography process used to fabricate the phase change memory device. Phase change patterns can be formed in contact with the top surface of the bottom electrodes to have a greater width than each of the dimensions in the x and y axes directions of the top surface of the bottom electrodes and top electrodes can be formed on the phase change patterns, wherein the line shape or the L shape represents a sectional line shape or a sectional L shape of the bottom electrodes in the x-axis direction.

Abstract: A nonvolatile memory cell includes a substrate and a phase changeable pattern configured to retain a state of the memory cell, on the substrate. An electrically insulating layer is provided, which contains a first electrode therein in contact with the phase changeable pattern. The first electrode has at least one of an L-shape when viewed in cross section and an arcuate shape when viewed from a plan perspective. A lower portion of the first electrode may be ring-shaped when viewed from the plan perspective. The lower portion of the first electrode may also have a U-shaped cross-section. An upper portion of the first electrode may also have an arcuate shape that spans more than 180° of a circular arc.