Abstract: Methods for polishing a substrate are provided. In one embodiment, the method includes pressing a substrate against a pad assembly disposed on rotating platen assembly, the pad assembly comprising an electrode coupled to a power source, flowing an electrolyte fluid onto the pad assembly, wherein the electrolyte fluid is in contact with the substrate and the electrode, creating an electrical bias between the electrode and the substrate, and heating the electrolyte fluid with an infrared lamp to a temperature of at least 10 degrees Celsius above room temperature.

Abstract: Polishing compositions and methods for removing barrier materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a barrier material from a substrate surface including an acid based electrolyte system, one or more chelating agents, one or more pH adjusting agents to provide a pH between about 3 and about 11, and a solvent. The composition may be used in an electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of barrier materials from the substrate surface with a reduction in planarization type defects.

Abstract: Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In certain embodiments, a composition for processing a substrate having a conductive material layer disposed thereon is provided wherein the composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, an amount of a pH adjusting agent sufficient to provide a pH between about 3 and about 10, anionic polymer abrasive particles, and a solvent. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

Abstract: A method and apparatus for temperature control of an ECMP process is provided. In one embodiment, an apparatus for polishing a substrate is provided. The apparatus includes a platen assembly having a support surface, the platen assembly disposed on a stationary base so that the platen assembly may rotate relative to the base. The apparatus further includes a pad assembly disposed on the support surface of the platen assembly and including an electrode electrically coupled to a power source and an abrasive pad electrically coupled to the power source. The apparatus further includes a control system for heating or cooling the pad assembly.

Abstract: Compositions and methods for processing a substrate having a conductive material layer disposed thereon are provided. In one embodiment, a composition for processing a substrate having a conductive material layer disposed thereon is provided which composition includes an acid based electrolyte, a chelating agent, a corrosion inhibitor, a passivating polymeric material, a pH adjusting agent, a leveler a solvent, and a pH between about 3 and about 10. The composition is used in a method to form a passivation layer on the conductive material layer, abrading the passivation layer to expose a portion of the conductive material layer, applying a bias to the substrate, and removing the conductive material layer.

Abstract: Polishing compositions and methods for removing barrier materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a barrier material from a substrate surface including an acid based electrolyte system, one or more chelating agents, one or more pH adjusting agents to provide a pH between about 3 and about 11, and a solvent. The composition may be used in an electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of barrier materials from the substrate surface with a reduction in planarization type defects.

Abstract: Polishing compositions and methods for removing conductive materials from a substrate surface are provided. In one aspect, a composition is provided for removing at least a conductive material from a substrate surface including one or more inorganic acids, a pH adjusting agent, a chelating agent, a passivating polymeric material, a pH between about 5 and about 10, and a solvent. The composition may be used in a single step or two step electrochemical mechanical planarization process. The polishing compositions and methods described herein improve the effective removal rate of materials from the substrate surface, such as tungsten, with a reduction in planarization type defects.

Abstract: A chemical mechanical polishing (CMP) formulation and method for using the same. The composition is useful for polishing semiconductor substrates, and particularly substrate surfaces containing copper, tungsten, or alloys of the same. The CMP formulation may contain a copolymer enhancement agent such as a Pluronics® compound, and/or a vesicle encapsulating agent, as well as an active agent that is chemically reactive with the substrate to enhance polishing performance. The active agent may be a bifunctional compound that is capable of functioning as both a passivating agent and a complexing agent to achieve an optimum rate of passivation and oxidation on the substrate surface. An active agent can also take the form of an oxidation activator, such as a metal ion, encapsulated in a vesicle or micelle, that is released with applied pressure to accelerate the removal process and improve planarization efficiency.