Abstract: There is provided a nickel alloy having an excellent creep strength as well as high-temperature oxidation resistance. The nickel alloy of the present invention comprises, by mass percent, Cr in a range of 11.5 to 11.9%, Co in a range of 25 to 29%, Mo in a range of 3.4 to 3.7%, W in a range of 1.9 to 2.1%, Ti in a range of 3.9 to 4.4%, Al in a range of 2.9 to 3.2%, C in a range of 0.02 to 0.03%, B in a range of 0.01 to 0.03%, Zr in a range of 0.04 to 0.06%, Ta in a range of 2.1 to 2.2%, Hf in a range of 0.3 to 0.4%, and Nb in a range of 0.5 to 0.8%, the balance being Ni and unavoidable impurities, and contains carbides and borides precipitating in crystal grains and at grain boundaries.

Abstract: There is provided a nickel alloy having an excellent creep strength as well as high-temperature oxidation resistance. The nickel alloy of the present invention comprises, by mass percent, Cr in a range of 11.5 to 11.9%, Co in a range of 25 to 29%, Mo in a range of 3.4 to 3.7%, W in a range of 1.9 to 2.1%, Ti in a range of 3.9 to 4.4%, Al in a range of 2.9 to 3.2%, C in a range of 0.02 to 0.03%, B in a range of 0.01 to 0.03%, Zr in a range of 0.04 to 0.06%, Ta in a range of 2.1 to 2.2%, Hf in a range of 0.3 to 0.4%, and Nb in a range of 0.5 to 0.8%, the balance being Ni and unavoidable impurities, and contains carbides and borides precipitating in crystal grains and at grain boundaries.

Abstract: There is provided a process for producing a dielectric thin film of a compound oxide of a high-melting metal and a low-melting metal by vapor-depositing the compound oxide onto a substrate, wherein the improvement comprises irradiating a laser beam onto the substrate or to the vapor phase during vapor deposition.There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.

Abstract: There is provided a process for producing a dielectric thin film of a perovskite oxide on a substrate by a vapor-deposition process which includes vaporizing the oxide and irradiating the oxide vapor or the substrate with a laser beam.There is also provided a pyroelectric type of sensor comprising: a MOS element including a drain electrode, a source electrode, a gate electrode and an Si semiconductor and a film of a ferroelectric or pyroelectric material formed on the drain electrode, the drain electrode being made of a material which exhibits a good ohmic contact with Si or SiO.sub.2 and has a lattice constant close to that of ferroelectric or pyroelectric material.

Abstract: An electrode in an electronic device using a functional thin film facilitates epitaxial growth during the functional material film-forming process and prevents the generation of cracks due to thermal stress. An oxide superconductor is using as an electrode material, thereby forming the crystal structure identical with the crystal structure of a functional thin film, and rendering their lattice constant and coefficient of thermal expansion close to the lattice constant and coefficient of thermal expansion functional thin film. According to the electrode material, high electric conductivity, low thermal conductivity and large thermal absorption coefficient characteristics can also be obtained.

Abstract: There is provided in a process for depositing a metal oxide superconducting film on a substrate by laser sputtering, the improvement which comprises carrying out the deposition of the metal oxide superconducting film in the presence of a gas having higher oxidation potential than oxygen.

Abstract: A plural number of types of material powders are accommodated in an accommodation chamber in a mixed state and the material powders are continuously subjected to a self-exothermic reaction inducing chemical reactions between the material powders caused by heat of reaction released when the mixed material powders synthesize. The synthesized material of high temperature due to the self-exothermic reaction is pressed by utilizing an electromagnetic force just after the finish of the self-exothermic reaction. The exothermic reaction is caused by an ignition circuit including an ignition electrode and the electromagnetic force is generated by an electromagnetic force generation circuit including an electric current inducing means. These circuits are connected through and regulated by a relay circuit. Thus the synthetic products of fine structure are obtained.

Abstract: A composite follow valve for internal combustion engines such as an intake and an exhaust valve and the method for producing the same are disclosed. The valve is produced by integrating into the whole a valve head portion molded from a lightweight, heat-resistant material selected from a group of titanium alloys and titanium-aluminium alloys, a stem portion molded from a high-strength alloy steel, made hollow inside to reduce weight, and a stem end portion molded from a hard material selected from a group of martensitic stainless steel, silicon nitride and silicon carbide ceramics. Since the different materials of the separate valve components are selected to meet the requirements of their particular functions and operating condition under which they are placed. Also, because of this separate arrangement, the valve can be produced at a relatively reduced cost, since the use of expensive materials is saved.