Abstract: A large-capacity-data high-speed-transfer system transfers large capacity data at high speed with millimeter-wave near field communication (NFC) from a first host device to a second host device. The system includes: a large capacity data card having a millimeter-wave NFC capability, the large capacity data card being fitted with a typical large capacity data memory capable of storing the large capacity data; and a host device adapter to be connected to a host device including the first host device and the second host device, the host device adapter having the millimeter-wave NFC capability, and executing millimeter-wave NFC communications with the large capacity data card to transfer the large capacity data at high speed between the large capacity data card and a host device to be a destination.

Abstract: A wireless transmission system includes a wireless HDMI transmitter and a wireless HDMI receiver. The wireless HDMI transmitter includes a carrier oscillator provided for each channel of an HDMI transmission path to output a carrier signal in a millimeter band, an OOK modulator provided for each carrier oscillator to perform on-off keying modulation on a carrier signal outputted by its corresponding carrier oscillator, and an input circuit provided for each channel of the HDMI transmission path to input a digital signal outputted by a source device to the OOK modulator.

Abstract: A wireless transmission system includes a wireless HDMI transmitter and a wireless HDMI receiver. The wireless HDMI transmitter includes a carrier oscillator provided for each channel of an HDMI transmission path to output a carrier signal in a millimeter band, an OOK modulator provided for each carrier oscillator to perform on-off keying modulation on a carrier signal outputted by its corresponding carrier oscillator, and an input circuit provided for each channel of the HDMI transmission path to input a digital signal outputted by a source device to the OOK modulator. Radio signals have different planes of polarization from their adjacent channels.

Abstract: A wireless transmission system includes a wireless HDMI transmitter and a wireless HDMI receiver. The wireless HDMI transmitter includes a carrier oscillator provided for each channel of an HDMI transmission path to output a carrier signal in a millimeter band, an OOK modulator provided for each carrier oscillator to perform on-off keying modulation on a carrier signal outputted by its corresponding carrier oscillator, and an input circuit provided for each channel of the HDMI transmission path to input a digital signal outputted by a source device to the OOK modulator.

Abstract: A wireless transmission system includes a wireless HDMI transmitter and a wireless HDMI receiver. The wireless HDMI transmitter includes a carrier oscillator provided for each channel of an HDMI transmission path to output a carrier signal in a millimeter band, an OOK modulator provided for each carrier oscillator to perform on-off keying modulation on a carrier signal outputted by its corresponding carrier oscillator, and an input circuit provided for each channel of the HDMI transmission path to input a digital signal outputted by a source device to the OOK modulator. Radio signals have different planes of polarization from their adjacent channels.

Abstract: A method of processing a polysilicon film formed on a single-crystal silicon substrate which can remove the polysilicon film with good selectivity in a fabrication process of semiconductor devices. First, a polysilicon film having an N-portion to be removed is formed on a single-crystal silicon substrate and then, the portion is selectively removed by the reactive ion etching using a Cl.sub.2 gas or mixed gases including a Cl.sub.2 gas. Preferably, N-impurity doping into the polysilicon film is performed by P or As ion-implantation with a dose of 1.times.10.sup.15 cm.sup.-2 or more. A Cl.sub.2 gas, mixed gases of Cl.sub.2 and BCl.sub.3, mixed gases of Cl.sub.2 and HBr, mixed gases of Cl.sub.2 and BBr.sub.3, and mixed gases of Cl.sub.2 and SiCl.sub.4 are preferably used.

Abstract: The present invention provides a novel method of forming an isolation region comprising a trench isolation region and a selective oxidation film region involved in a semiconductor integrated circuit device. A silicon oxide film is deposited on a surface of a trench groove formed within a semiconductor bulk, followed by a deposition of a polycrystalline silicon material. The silicon oxide film within the trench groove is subjected to etching up to a predetermined depth so as to form a hollow portion. A polycrystalline silicon film is deposited within the hollow portion and on both surfaces of the polycrystalline silicon material and the semiconductor bulk. The polycrystalline silicon film within the hollow portion, the polycrystalline silicon material and the semiconductor bulk in the vicinity of the trench groove is subjected to selective oxidation so as to form a selective oxidation film region.

Abstract: A bipolar transistor in which a base region and a collector lead-out portion is separated is disclosed. The base region and an active collector portion under the base region is surrounded by a narrow trench filling an insulating film, and the trench is in turn surrounded by the collector lead-out portion. A collector electrode is contacted to the upper surface of the collector lead-out portion such that the collector contact surrounds the active collector portion via the trench, in the plan view.

Abstract: A bipolar semiconductor device comprises a substrate, a collector region formed of an epitaxial layer of a first conduction type formed on the substrate, a field oxide layer formed on the epitaxial layer so as to define a device formation zone in a device isolation manner, a recess formed in the device formation zone in alignment with an edge of the field oxide layer, a polycrystalline silicon layer of a second conduction type opposite to the first conduction type and formed on a side wall of the recess and on the field oxide layer, and an base region composed of a graft base region and an active base region.

Abstract: A bipolar transistor in which a base region and a collector lead-out portion is separated is disclosed. The base region and an active collector portion under the base region is surrounded by a narrow trench filling an insulating film, and the trench is in turn surrounded by the collector lead-out portion. A collector electrode is contacted to the upper surface of the collector lead-out portion such that the collector contact surrounds the active collector portion via the trench, in the plan view.

Abstract: A process of fabricating a semiconductor device, wherein a semiconductor substrate of one conductivity type has formed therein layers including a semiconductor layer of the opposite conductivity type, an anti-oxidation mask layer, a doped polysilicon layer, an anti-etch mask layer and a silicon oxide film. Within the substrate are defined isolation areas, from which the silicon oxide film, anti-etch mask layer and doped polysilicon layer are selectively etched away. On the resultant structure is formed an undoped or lightly doped polysilicon layer. Then, the structure is heated to cause atoms of the impurity in the doped polysilicon layer to diffuse into the directly adjacent portions of the undoped or lightly doped polysilicon layer. The undoped or lightly doped polysilicon layer is then etched away over its areas on the silicon oxide film and on the device isolation areas of the substrate. The anti-oxidation mask layer is partially etched away.