Abstract: The present invention provides a scanning electron microscope (SEM) or optical inspection method and apparatus which correct differences in brightness between comparison images and thus which is capable of detecting a fine defect with a high degree of reliability without causing any false defect detection. According to the present invention, the brightness values of a pattern, which should be essentially the same, contained in two detected images to be compared are corrected in such a manner that, even if there may be a brightness difference in a portion free from defects, the brightness difference is reduced to such a degree so that it can be recognized as a normal portion. Also, a limit for the amount of correction is furnished in advance, and correction exceeding such limit value is not performed. Such correction prevents the difference in brightness that should be permitted as non-defective from being falsely recognized as a defect without overlooking great differences in brightness due to a defect.

Abstract: In an electron particle machine for observing, inspecting, processing or analyzing a semiconductor wafer as a substrate or a sample, a light source is installed in a preparation chamber. A chucking stage for chucking the semiconductor wafer with a chuck using static electricity is provided with parts for connecting to earth such that they are in contact with the chucked semiconductor wafer. After the chuck using static electricity is released after observation, inspection, process or analysis, a surface of the semiconductor wafer and the parts for connecting to earth are irradiated with light from the light source. This provides conductivity to the surface of the semiconductor wafer, so that charge accumulated on the semiconductor wafer is removed from the surface through the parts for connecting to earth.

Abstract: In a method for observing or processing and analyzing the surface of a sample by irradiating a charged beam on the sample covered at least partially by an insulator film, an ultraviolet light is irradiated possibly as pulse on the sample (substrate), thereby transforming the insulator into a conductive material due to the photoconductivity effect, thereby transforming the surface of the sample (substrate) into a conductive material, so that charged particles are grounded from a grounded portion in order to prevent the charged beam from being repulsed due to charged particles of the irradiated charged beam accumulated in the insulator formed on the surface of the sample (substrate).

Abstract: A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering.

Abstract: A secondary charged particle image acquisition method and its apparatus for detecting a secondary charged particle image. The method includes the steps of irradiating a surface of a specimen with a focused charged particle beam and detecting a secondary charged particle emanated from the surface of the specimen, obtaining a secondary charged particle image based on the detected secondary charged particle, irradiating a positive ion beam on the surface of the specimen where the focused charged particle beam is irradiated and inducing a conductive layer on the surface of the specimen by the irradiation of the positive ion beam and diffusing an electric charge on the surface of the conductive layer.

Abstract: A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber (18) provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering.

Abstract: A charged particle beam milling system which is designed in such a way that a milling end point is judged to stop the milling on the basis of a change in the magnitude of secondary ion signals generated when milling an electronic device such as an LSI having a multi-wiring layer structure, in which a wiring layer and an insulating layer are laminated, using a charged particle beam.

Abstract: A processing method using a plasma ion source for generating a focused ion beam, characterized by covering, with an insulator, an inner wall of a plasma holding vessel excluding a reference electrode for applying a voltage to a plasma and an ion extraction electrode for extracting ions from the plasma, and employing means of continuously controlling the absolute value of an ion beam current in a range of from 1 to 10 .mu.A by changing the absolute value of an ion extraction voltage applied between the reference electrode and the ion extraction electrode in a range of from 0 to 100 V; and an apparatus for carrying out the processing method. This is advantageous in stabilizing the ion beam current and in preventing the ion beam from being made dim even when the current value of the ion beam is changed.

Abstract: A processing method and apparatus using a focused energy beam for conducting local energy beam processing in a focused energy beam irradiating area by irradiating a sample with a focused energy beam such as an ion beam or an electron beam in an etching gas atmosphere. As the etching gas, a mixed gas different in composition from any conventional one is employed and the gas is uniformly supplied to an etching area and at least one of the components of such a mixed gas is a spontaneous reactive gas for use in etching the sample spontaneously and isotropically. With this arrangement, it is possible to subject to local etching a material for which the local etching has been impossible to provide since a single etching gas causes a reaction too fierce or causes almost nearly no reaction.

Abstract: A processing method and a processing apparatus realizing the method use a focused ion beam generator. The apparatus includes a plasma or liquid metal ion source producing ions not influencing electric characteristics of a sample, an ion beam generator for extracting ions from the ion source into an ion beam, an ion beam focusing device for focusing the ion beam, an irradiator for irradiating the focused ion beam onto the sample, and a sample chamber in which the sample to be irradiated for processing is installed. The focused ion beam is irradiated onto a sample such as a silicon wafer or device to conduct on a particular position of the sample a fine machining work, a fine layer accumulation, and an analysis.

Abstract: A processing method and a processing apparatus realizing the method use a focused ion beam generator. The apparatus includes a plasma or liquid metal ion source producing ions not influencing electric characteristics of a sample, an ion beam generator for extracting ions from the ion source into an ion beam, an ion beam focusing device for focusing the ion beam, an irradiator for irradiating the focused ion beam onto the sample, and a sample chamber in which the sample to be irradiated for processing is installed. The focused ion beam is irradiated onto a sample such as a silicon wafer or device to conduct on a particular position of the sample a fine machining work, a fine layer accumulation, and an analysis.

Abstract: A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.

Abstract: An optical mask for a projection optical system and a method of correcting the mask wherein the mask includes a light intercepting pattern formed on a transparent substrate and a phase shifter for changing the phase of an exposure light provided at predetermined openings of the light intercepting pattern. An etching stopper film which transmits the exposure light is provided between said phase shifter and said light intercepting pattern and for correction of the mask a focused ion beam is utilized for removal of defects by the phase shifter.

Abstract: A defect of a phase shift mask, which has a phase shifter disposed on a transparent substrate, formed into a predetermined pattern and acting to shift a phase of exposure light transmitted therethrough and an etching stopper disposed between the phase shifter and the transparent substrate, which is resistant to an etching to which the phase shifter is subjected and transparent for exposure light is corrected by selectively etching a defective portion of the phase shifter, having a lacking type defect, with respect to the etching stopper layer along the whole thickness of the phase shifter and by perforating a portion of the etching stopper layer and the transparent substrate positioned under the etched defective portion by a depth which corresponds to a magnitude of an optical path of the phase shifter for the exposure light, the etching being a reactive etching which uses charged particle beam and a reactive gas and, the bottom surface of a portion etched being flattened by utilizing a fact that the phase sh

Abstract: A method of processing a sample using a charged beam and reactive gases and a system employing the same, the method and system being able to perform the reactive etching and the beam assisted deposition using a charged particle detector free from the degradation of the performance due to the reactive gas. The system is designed in such a way that a shutter mechanism is provided in the form of the charged particle detector, and a chamber for accommodating the charged particle detector can be evacuated. In the observation of the sample, the charged particle detector is turned on to open the shutter mechanism, and in the processing of the sample, the charged particle detector is turned off or left as it is to shut the shutter mechanism to evacuate the inside of the charged particle detector.

Abstract: There is disclosed an ion beam processing method of processing a rotating workpiece for a very small-size rotary member, using an ion beam or a focused ion beam. Apparatus for performing this method is also disclosed. In the formation of a product having a non-circular cross-section, when the amount of application of the ion beam is kept constant, the rotational angular velocity of the workpiece is varied in accordance with the rotational angular position of the workpiece. On the other hand, when the rotational angular velocity of the workpiece is kept constant, the amount of application of the ion beam is varied. When it is difficult to align the axis of the workpiece with the axis of rotation of a workpiece holder, the focused ion beam is applied in accordance with the oscillation of the workpiece.

Abstract: Disclosed is a plasma CVD apparatus and a method therefor, the apparatus comprising: a microwave generating portion; a coaxial cavity resonator for making a microwave supplied from the microwave generating portion resonate; a plurality of gas leading inlets provided in under portions of an axis of the cavity resonator and in peripheral wall portions of the cavity resonator for leading-in a supplied CVD gas; and a plasma generating chamber in which the CVD gas lead into the plasma generating chamber through the gas leading inlets and made to flow uniformly onto a surface of a substrate is subject to the microwave made intensive through resonance in the cavity resonator and radiated through a coupling plate so that uniform plasma is generated to thereby form a thin film on the surface of the substrate.

Abstract: A plasma processing apparatus including a microwave generator, a waveguide for supplying microwaves generated by the microwave generator, a cavity resonator for resonating the microwaves supplied by the waveguide, and a plasma processing chamber. The plasma processing chamber is coupled to the cavity resonator for receiving resonated microwaves therefrom and for generating a plasma therein. The plasma processing chamber is provided with a stage for holding a substrate for plasma processing, and apparatus for introducing a plasma processing gas to the plasma processing chamber for exhausting gas therefrom. A separation plate separates the cavity resonator and the plasma processing chamber and enables resonated microwaves to be transmitted therethrough from the cavity resonator means to the plasma processing chamber.