Abstract: An anode active material for a lithium secondary battery includes a carbon-based particle including pores therein, a silicon-containing coating layer formed at an inside the pores of the carbon-based particle or on a surface of the carbon-based particle, and a carbon coating layer formed on the silicon-containing coating layer. A full width at half maximum (FWHM) of an O1s peak of a surface measured by an X-ray photoelectron spectroscopy (XPS) is 2.0 or more. A lithium secondary battery including the anode active material having improved initial discharge capacity and capacity efficiency is provided.

Abstract: An anode active material for a lithium secondary battery and a lithium secondary battery are provided. The anode active material includes a carbon-based particle including pores formed in at least one of an inside of the particle and a surface of the particle and having a pore size of the carbon-based particle is 20 nm or less, and silicon formed at an inside of the pores of the carbon-based particle or on the surface of the carbon-based particle. Silicon has an amorphous structure or a crystallite size of silicon measured by an XRD analysis is 7 nm or less. Difference between volume expansion ratios of carbon and silicon can be reduced to improve life-span property of the secondary battery.

Abstract: An oxide semiconductor sputtering target which is used for depositing a thin film having high electron mobility and high operational reliability, a method of manufacturing thin-film transistors (TFTs) using the same, and a TFT manufactured using the same. The oxide semiconductor sputtering target is used in a sputtering process for depositing an active layer on a TFT. The oxide semiconductor sputtering target is made of a material based on a composition including indium (In), tin (Sn), gallium (Ga) and oxygen (O). The method includes the step of depositing an active layer using the above-described oxide semiconductor sputtering target. The thin-film transistor may be used in a display device, such as a liquid crystal display (LCD) or an organic light-emitting display (OLED).

Abstract: Provided are a zinc oxide-based sputtering target, a method of preparing the same, and a thin film transistor including a barrier layer deposited by the zinc oxide-based sputtering target. The zinc oxide-based sputtering target includes a sintered body that is composed of zinc oxide in which indium oxide is doped in a range from about 1% w/w to about 50% w/w. A backing plate is coupled to a back of the sintered body. The backing plate supports the sintered body.

Abstract: An oxide semiconductor sputtering target which is used for depositing a thin film having high electron mobility and high operational reliability, a method of manufacturing thin-film transistors (TFTs) using the same, and a TFT manufactured using the same. The oxide semiconductor sputtering target is used in a sputtering process for depositing an active layer on a TFT. The oxide semiconductor sputtering target is made of a material based on a composition including indium (In), tin (Sn), gallium (Ga) and oxygen (O). The method includes the step of depositing an active layer using the above-described oxide semiconductor sputtering target. The thin-film transistor may be used in a display device, such as a liquid crystal display (LCD) or an organic light-emitting display (OLED).

Abstract: Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm2O3 and Yb2O3, wherein an amount of the oxide is about 0.5 wt. % to about 10 wt. % based on the weight of the target.

Abstract: Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm2O3 and Yb2O3, wherein an amount of the oxide is about 0.5 wt. % to about 10 wt. % based on the weight of the target.

Abstract: Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm2O3 and Yb2O3, wherein an amount of the oxide is about 0.5 wt. % to about 10 wt. % based on the weight of the target.

Abstract: Disclosed are an indium (In) zinc (Zn) oxide based sputtering target, a method of manufacturing the same, and an In Zn oxide based thin film deposited using the In Zn oxide based sputtering target. The In Zn oxide based sputtering target has a composition of (MO2)x(In2O3)y(ZnO)z, in which x:y is about 1:0.01 to 1:1, y:z is about 1:0.1 to 1:10, and M is at least one metal selected from a group consisting of hafnium (Hf), zirconium (Zr), and titanium (Ti).

Abstract: Disclosed are a zinc (Zn) oxide based sputtering target, a method of manufacturing the same, and a Zn oxide based thin film deposited using the Zn oxide based sputtering target. The Zn oxide based sputtering target has a composition of InxHoyO3(ZnO)T, in which x+y=2, x:y is about 1:0.001 to 1:1, and T is about 0.1 to 5.

Abstract: Disclosed are an indium Tin Oxide (ITO) target, a method for manufacturing the same, a transparent conductive film of ITO, and a method for manufacturing the transparent conductive film of ITO. The ITO target includes at least one oxide selected from the group consisting of Sm2O3 and Yb2O3, wherein an amount of the oxide is about 0.5 wt. % to about 10 wt. % based on the weight of the target.