Patents by Inventor Jurgen Graul

Jurgen Graul has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of producing a doped zone of one conductivity type in a semiconductor body utilizing an ion-implanted polycrystalline dopant source
    Patent number: 4063967
    Abstract: A semiconductor body is coated at selected areas thereof with a polycrystalline or amorphous semiconductor layer, a dopant is ion-implanted into such polycrystalline or amorphous layer and the resultant structure is then subjected to diffusion conditions to diffuse the dopant from the polycrystalline or amorphous layer into the select zone of the semiconductor body. This process causes very slight disturbances in the crystal lattice of the semiconductor body and provides an adjustable dopant concentration at select surface zones of the semiconductor body.
    Type: Grant
    Filed: October 9, 1975
    Date of Patent: December 20, 1977
    Assignee: Siemens Aktiengesellschaft
    Inventors: Jurgen Graul, Helmuth Murrmann