Abstract: An apparatus and a method for determining the temperature of a substrate, in particular of a semiconductor substrate during the heating thereof by means of at least one first radiation source are disclosed. A determination of the temperature is based on detecting first and second radiations, each comprising radiation emitted by the substrate due to its own temperature and radiation emitted by the first radiation, which is reflected at the substrate and at least one of a drive power of the first radiation source and the radiation intensity of the first radiation source.

Abstract: Disclosed are a method and an apparatus for the detection of a plasma in a process chamber for the treatment of substrates. In the method, the pressure within the chamber is measured over a period of time using a pressure sensor, a sudden change in pressure is detected and an ignition or extinguishing of a plasma determined at least by means of the pressure change. The apparatus comprises a process chamber, for receiving at least one substrate, with at least one plasma generator, at least one pressure sensor which is situated so as to detect the pressure within the process chamber and output an output signal corresponding to the pressure, and at least one evaluation unit. The evaluation unit is capable of monitoring over a period of time an output signal from the pressure sensor and, on the basis of at least one sudden change in the output signal of the pressure sensor, of determining an ignition and/or an extinguishing of a plasma.

Abstract: An apparatus and a method for determining the temperature of a substrate, in particular of a semiconductor substrate during the heating thereof by means of at least one first radiation source are disclosed. A determination of the temperature is based on detecting first and second radiations, each comprising radiation emitted by the substrate due to its own temperature and radiation emitted by the first radiation, which is reflected at the substrate and at least one of a drive power of the first radiation source and the radiation intensity of the first radiation source.

Abstract: A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.

Abstract: A device is provided for accommodating disk-shaped objects, preferably semiconductor wafers for a thermal treatment thereof. The device has a carrier with at least two recesses for respective objects, and at least one cover for covering at least one of the recesses. A handling apparatus is also provided and has at least one transport arm, at least one support arm, at least one support drive provided on the arm for supporting, via vacuum, at least one object that is to be handled, a device for determining the individual weight of an object, and a vacuum control device for altering the vacuum as a function of the individual weight of an object.

Abstract: The aim of the invention is to reduce the formation of scratches in a device for the thermal treatment of substrates, in particular, semiconductor substrates, in a chamber in which the substrate is placed upon support elements. According to the invention, said aim is achieved by means of displaceable support elements.

Abstract: A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH3 molecules.

Abstract: The invention relates to a method for generating defect profiles in a crystal or crystalline structure of a substrate, preferably a semiconductor, during a thermal treatment in a process chamber. According to the inventive method, a concentration and/or a density distribution of defects is controlled with at least one reactive component each depending on at least two process gases that differ in their composition. At least two of the process gases independently act upon at least two different surfaces of the substrate.

Abstract: A device for receiving plate-shaped objects, preferably semiconductor wafers, for the thermal treatment thereof, enabling the processing of wafers made of connecting semiconductors in a particularly simple manner. The inventive device offers high productivity and low risk of damage as a carrier has at least two recesses for respectively receiving an object. The recesses on the carrier can preferably be provided with covers. Preferably, support pins are provided for loading and unloading purposes. The carrier and the support pins can move in a vertical direction in relation to each other. A handling device for objects is also disclosed.

Abstract: The aim of the invention is to reduce the formation of scratches in a device for the thermal treatment of substrates, in particular, semiconductor substrates, in a chamber in which the substrate is placed upon support elements. According to the invention, said aim is achieved by means of displaceable support elements.

Abstract: A method of removing first molecules adsorbed on the surfaces of a chamber and/or at least one object found in the chamber is provided. Second, polar molecules that have a desorptive effect on the first molecules are introduced into the chamber. The second molecules comprise nitrogen and hydrogen, and especially NH3 molecules.

Abstract: The invention relates to a method for generating defect profiles in a crystal or crystalline structure of a substrate, preferably a semiconductor, during a thermal treatment in a process chamber. According to the inventive method, a concentration and/or a density distribution of defects is controlled with at least one reactive component each depending on at least two process gases that differ in their composition. At least two of the process gases independently act upon at least two different surfaces of the substrate.