Patents by Inventor Jurgen Ohm

Jurgen Ohm has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor component with integrated capacitance structure having a plurality of metallization planes
    Patent number: 7061746
    Abstract: A semiconductor component includes an insulating layer, which is configured on a semiconductor substrate and in which a capacitor structure is formed. The capacitor structure has at least two parallel metallization planes, whereby at least one of the planes is configured in a lattice and inhomogeneous structure, which are electrically connected to the first metallization plane, extended at least partially into the cavities of the latticework metallization plane.
    Type: Grant
    Filed: April 17, 2003
    Date of Patent: June 13, 2006
    Assignee: Infineon Technologies AG
    Inventors: Hichem Abdallah, Jürgen Öhm
  • Semiconductor component comprising an integrated capacitor structure tha has a plurality of metallization planes
    Publication number: 20050219790
    Abstract: A semiconductor component includes an insulating layer, which is configured on a semiconductor substrate and in which a capacitor structure is formed. Said capacitor structure comprises at least two parallel metallization planes, whereby at least one of said planes is configured in a lattice and inhomogeneous structure, which are electrically connected to the first metallization plane, extended at least partially into the cavities of the latticework metallization plane.
    Type: Application
    Filed: April 17, 2003
    Publication date: October 6, 2005
    Inventors: Hichem Abdallah, Jurgen Ohm