Abstract: For high-speed single-ended sensing of the signal from a (multi-port) SRAM cell, a configurable half-latch with 2 PFET feedback pathes is proposed, which can be set up either as a bleeder device in the system mode or as keeper devices in the test modes, controlled by a DC signal (TEST). The bleeder and keepers are attached to the bit line and gated by a small ratioed inverter serving as sense amplifier. In case of system mode, a low control signal is applied to the source of the bleeder to limit the bit line up-level to a threshold below the supply voltage Vdd. Thus, discharging the bit line when reading a `0` is fast. Reading a `1` is also fast by skewing the inverter to a PFET/NFET ratio below 1. For chip testing, the control signal is set high to enable the keepers which restore the bit line close to the supply voltage, even when large subthreshold currents try to discharge it via the unselected cells. This turns off the PFET of the inverter, thereby minimizing the DC current.

Abstract: A new method is indicated for the restore of bitlines and data-lines from memory-cells. All bit- and datalines are switched together during the restore activity so that all restore-FETs can be prepared with the necessary re-charging current. The non-addressed bitlines are then switched off through their bitswitches. In this manner, the dimensions of the re-charging devices can be considerably reduced.

Abstract: The invention relates to a memory device comprising a set of word decoders W, a set of wordline drivers WL, a plurality of switches S to connect a subset of the wordline drivers to the set of word decoders and storage means 5 for the storage of information indicative of a defective wordline. The wordline drivers include a predefined subset of wordline drivers which are to be used when none of the wordlines are defective and a plurality of second subsets of wordline drivers which are to be used when one of the wordlines is defective. The memory device further includes logic means 4 for logically and permanently assigning one of the subsets to the set of word decoders in response to the information stored in the storage means, by controlling the switches S to connect one of the second subsets of wordline drivers to the set of word decoders.